Patents by Inventor Chia-Heng TSAI

Chia-Heng TSAI has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20230253273
    Abstract: A semiconductor device structure is provided. The semiconductor device structure includes a semiconductor substrate and multiple first conductive lines over the semiconductor substrate. The first conductive lines are not electrically connected to each other. The semiconductor device structure also includes multiple first magnetic structures wrapped around portions of the first conductive lines and multiple second conductive lines over the semiconductor substrate. The second conductive lines are electrically connected in series. The semiconductor device structure further includes multiple second magnetic structures wrapped around portions of the second conductive lines. A size of each of the second magnetic structures and a size of each of the first magnetic structures are substantially the same.
    Type: Application
    Filed: April 14, 2023
    Publication date: August 10, 2023
    Inventors: Mill-Jer WANG, Tang-Jung CHIU, Chi-Chang LAI, Chia-Heng TSAI, Mirng-Ji LII, Weii LIAO
  • Patent number: 11631621
    Abstract: A semiconductor device structure is provided. The semiconductor device structure includes a semiconductor substrate and a first magnetic element and a second magnetic element over the semiconductor substrate. The semiconductor device structure also includes a first conductive line extending exceeding an edge of the first magnetic element. The semiconductor device structure further includes a second conductive line extending exceeding an edge of the second magnetic element. The second conductive line is electrically connected to the first conductive line.
    Type: Grant
    Filed: May 24, 2021
    Date of Patent: April 18, 2023
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Mill-Jer Wang, Tang-Jung Chiu, Chi-Chang Lai, Chia-Heng Tsai, Mirng-Ji Lii, Weii Liao
  • Publication number: 20210280477
    Abstract: A semiconductor device structure is provided. The semiconductor device structure includes a semiconductor substrate and a first magnetic element and a second magnetic element over the semiconductor substrate. The semiconductor device structure also includes a first conductive line extending exceeding an edge of the first magnetic element. The semiconductor device structure further includes a second conductive line extending exceeding an edge of the second magnetic element. The second conductive line is electrically connected to the first conductive line.
    Type: Application
    Filed: May 24, 2021
    Publication date: September 9, 2021
    Inventors: Mill-Jer WANG, Tang-Jung CHIU, Chi-Chang LAI, Chia-Heng TSAI, Mirng-Ji LII, Weii LIAO
  • Patent number: 11018065
    Abstract: A semiconductor device structure is provided. The semiconductor device structure includes a semiconductor substrate having a testing region and multiple first conductive lines over the testing region. The first conductive lines are electrically connected in series. The semiconductor device structure also includes multiple second conductive lines over the testing region. The second conductive lines are electrically connected in series, and the second conductive lines are physically separated from the first conductive lines. The semiconductor device structure further includes multiple magnetic structures wrapping around portions of the first conductive lines and wrapping around portions of the second conductive lines. The magnetic structures are arranged in a column.
    Type: Grant
    Filed: August 22, 2019
    Date of Patent: May 25, 2021
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Mill-Jer Wang, Tang-Jung Chiu, Chi-Chang Lai, Chia-Heng Tsai, Mirng-Ji Lii, Weii Liao
  • Publication number: 20210057293
    Abstract: A semiconductor device structure is provided. The semiconductor device structure includes a semiconductor substrate having a testing region and multiple first conductive lines over the testing region. The first conductive lines are electrically connected in series. The semiconductor device structure also includes multiple second conductive lines over the testing region. The second conductive lines are electrically connected in series, and the second conductive lines are physically separated from the first conductive lines. The semiconductor device structure further includes multiple magnetic structures wrapping around portions of the first conductive lines and wrapping around portions of the second conductive lines. The magnetic structures are arranged in a column.
    Type: Application
    Filed: August 22, 2019
    Publication date: February 25, 2021
    Inventors: Mill-Jer WANG, Tang-Jung CHIU, Chi-Chang LAI, Chia-Heng TSAI, Mirng-Ji LII, Weii LIAO