Patents by Inventor CHIA-HSI WANG
CHIA-HSI WANG has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240136183Abstract: A photo resist layer is used to protect a dielectric layer and conductive elements embedded in the dielectric layer when patterning an etch stop layer underlying the dielectric layer. The photo resist layer may further be used to etch another dielectric layer underlying the etch stop layer, where etching the next dielectric layer exposes a contact, such as a gate contact. The bottom layer can be used to protect the conductive elements embedded in the dielectric layer from a wet etchant used to etch the etch stop layer.Type: ApplicationFiled: January 2, 2024Publication date: April 25, 2024Inventors: Yu-Shih Wang, Hong-Jie Yang, Chia-Ying Lee, Po-Nan Yeh, U-Ting Chiu, Chun-Neng Lin, Ming-Hsi Yeh, Kuo-Bin Huang
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Patent number: 11934027Abstract: An optical system affixed to an electronic apparatus is provided, including a first optical module, a second optical module, and a third optical module. The first optical module is configured to adjust the moving direction of a first light from a first moving direction to a second moving direction, wherein the first moving direction is not parallel to the second moving direction. The second optical module is configured to receive the first light moving in the second moving direction. The first light reaches the third optical module via the first optical module and the second optical module in sequence. The third optical module includes a first photoelectric converter configured to transform the first light into a first image signal.Type: GrantFiled: June 21, 2022Date of Patent: March 19, 2024Assignee: TDK TAIWAN CORP.Inventors: Chao-Chang Hu, Chih-Wei Weng, Chia-Che Wu, Chien-Yu Kao, Hsiao-Hsin Hu, He-Ling Chang, Chao-Hsi Wang, Chen-Hsien Fan, Che-Wei Chang, Mao-Gen Jian, Sung-Mao Tsai, Wei-Jhe Shen, Yung-Ping Yang, Sin-Hong Lin, Tzu-Yu Chang, Sin-Jhong Song, Shang-Yu Hsu, Meng-Ting Lin, Shih-Wei Hung, Yu-Huai Liao, Mao-Kuo Hsu, Hsueh-Ju Lu, Ching-Chieh Huang, Chih-Wen Chiang, Yu-Chiao Lo, Ying-Jen Wang, Shu-Shan Chen, Che-Hsiang Chiu
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Publication number: 20240055290Abstract: Various embodiments of the present application are directed toward an adjustable wafer chuck. The adjustable wafer chuck is configured to hold a wafer. The adjustable wafer chuck comprises a base portion and a pad portion. The base portion comprises a plurality of adjustable base structures. The pad portion is disposed on a first side of the base portion. The pad portion comprises a plurality of contact pads disposed on the plurality of adjustable base structures. Each of the adjustable base structures are configured to move along a plane in a first direction and configured to move along the plane in a second direction that is opposite the first direction.Type: ApplicationFiled: August 15, 2022Publication date: February 15, 2024Inventors: Chia-Hsi Wang, Yen-Yu Chen
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Publication number: 20240014019Abstract: A deposition apparatus includes a process chamber, a wafer support in the process chamber, a backplane structure having a first surface in the process chamber facing the wafer support, a target having a second surface facing the first surface and a third surface facing the wafer support, and an adhesion structure in physical contact with the backplane structure and the target. The adhesion structure has an adhesion material layer, and a spacer embedded in the adhesion material layer.Type: ApplicationFiled: September 22, 2023Publication date: January 11, 2024Inventors: Chia-Hsi WANG, Yen-Yu CHEN
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Publication number: 20230374654Abstract: A method is provided. The method includes the following steps: introducing a first physical vapor deposition (PVD) target and a second PVD target in a PVD system, the first PVD target containing a boron-containing cobalt iron alloy (FeCoB) with an initial boron concentration, and the second PVD target containing boron; determining parameters of the PVD system based on a target boron concentration larger than the initial boron concentration; and depositing a FeCoB film on a substrate according to the parameters of the PVD system.Type: ApplicationFiled: August 7, 2023Publication date: November 23, 2023Inventors: Chia-Hsi Wang, Yen-Yu Chen, Jen-Hao Chien
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Patent number: 11823878Abstract: A deposition apparatus includes a process chamber, a wafer support in the process chamber, a backplane structure having a first surface in the process chamber facing the wafer support, a target having a second surface facing the first surface and a third surface facing the wafer support, and an adhesion structure in physical contact with the backplane structure and the target. The adhesion structure has an adhesion material layer, and a spacer embedded in the adhesion material layer.Type: GrantFiled: August 30, 2021Date of Patent: November 21, 2023Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Chia-Hsi Wang, Yen-Yu Chen
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Publication number: 20230366079Abstract: A physical vapor deposition (PVD) target for performing a PVD process is provided. The PVD target includes a backing plate and a target plate coupled to the backing plate. The target plate includes a sputtering source material and a dopant, with the proviso that the dopant is not impurities in the sputtering source material. The sputtering source material includes a diffusion barrier material.Type: ApplicationFiled: July 27, 2023Publication date: November 16, 2023Inventors: Chia-Hsi WANG, Yen-Yu CHEN, Yi-Chih CHEN, Shih-Wei BIH
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Publication number: 20230335423Abstract: A multi-chamber semiconductor processing system is provided. The multi-chamber semiconductor processing system includes: a plurality of chambers, each of the plurality of chambers corresponding to a semiconductor process; a transfer chamber; a transfer robot in the transfer chamber and having a holding member capable of holding a wafer, the transfer robot configured to transfer the wafer among the plurality of chambers; a first temperature sensor mounted on the holding member and configured to detect a transfer robot temperature; and a temperature adjustment unit mounted on the transfer robot and configured to adjust the transfer robot temperature.Type: ApplicationFiled: April 18, 2022Publication date: October 19, 2023Inventors: Chia-Hsi Wang, Yen-Yu Chen
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Publication number: 20230307218Abstract: A method includes loading a wafer into a sputtering chamber, followed by depositing a film over the wafer by performing a sputtering process in the sputtering chamber. In the sputtering process, a target is bombarded by ions that are applied with a magnetic field using a magnetron. The magnetron includes a magnetic element over the target, an arm assembly connected to the magnetic element, a hinge mechanism connecting the arm assembly and a rotational shaft. The arm assembly includes a first prong and a second prong at opposite sides of the hinge mechanism. The magnetron further includes a controller that controls motion of the first arm assembly, enabling the first prong to revolve in an orbital motion path about the first hinge mechanism while the second prong remains stationary.Type: ApplicationFiled: May 12, 2023Publication date: September 28, 2023Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Chia-Hsi WANG, Kun-Che HO, Yen-Yu CHEN
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Patent number: 11725270Abstract: A physical vapor deposition (PVD) target for performing a PVD process is provided. The PVD target includes a backing plate and a target plate coupled to the backing plate. The target plate includes a sputtering source material and a dopant, with the proviso that the dopant is not impurities in the sputtering source material. The sputtering source material includes a diffusion barrier material.Type: GrantFiled: December 8, 2020Date of Patent: August 15, 2023Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Chia-Hsi Wang, Yen-Yu Chen, Yi-Chih Chen, Shih Wei Bih
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Patent number: 11688591Abstract: A an apparatus includes a processing chamber configured to house a workpiece, a target holder in the processing chamber, a first magnetic element positioned over a backside of the target holder, a first arm assembly connected to the first magnetic element, a rotational shaft, and a first hinge mechanism connecting the rotational shaft and the first arm assembly.Type: GrantFiled: July 28, 2022Date of Patent: June 27, 2023Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Chia-Hsi Wang, Kun-Che Ho, Yen-Yu Chen
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Publication number: 20230069264Abstract: A deposition apparatus includes a process chamber, a wafer support in the process chamber, a backplane structure having a first surface in the process chamber facing the wafer support, a target having a second surface facing the first surface and a third surface facing the wafer support, and an adhesion structure in physical contact with the backplane structure and the target. The adhesion structure has an adhesion material layer, and a spacer embedded in the adhesion material layer.Type: ApplicationFiled: August 30, 2021Publication date: March 2, 2023Inventors: Chia-Hsi WANG, Yen-Yu CHEN
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Publication number: 20230066870Abstract: A deposition system is provided capable of extending the chamber running time by preventing the target and other components from deformation due to thermal stress from the sputtering process by maintaining the temperature within the predetermined temperature range. The deposition system includes a substrate process chamber, a target within the substrate process chamber, and a plurality of grooves formed on the target in a circular formation. The plurality of grooves includes a first groove on a center portion of the target and a second groove on a periphery portion of the target.Type: ApplicationFiled: August 30, 2021Publication date: March 2, 2023Inventors: Chia-Hsi WANG, Yen-Yu CHEN
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Publication number: 20230032857Abstract: A method is provided. The method includes the following steps: introducing a first physical vapor deposition (PVD) target and a second PVD target in a PVD system, the first PVD target containing a boron-containing cobalt iron alloy (FeCoB) with an initial boron concentration, and the second PVD target containing boron; determining parameters of the PVD system based on a target boron concentration larger than the initial boron concentration; and depositing a FeCoB film on a substrate according to the parameters of the PVD system.Type: ApplicationFiled: January 23, 2022Publication date: February 2, 2023Inventors: Chia-Hsi Wang, Yen-Yu Chen, Jen-Hao Chien
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Publication number: 20220367161Abstract: A an apparatus includes a processing chamber configured to house a workpiece, a target holder in the processing chamber, a first magnetic element positioned over a backside of the target holder, a first arm assembly connected to the first magnetic element, a rotational shaft, and a first hinge mechanism connecting the rotational shaft and the first arm assembly.Type: ApplicationFiled: July 28, 2022Publication date: November 17, 2022Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Chia-Hsi WANG, Kun-Che HO, Yen-Yu CHEN
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Patent number: 11462394Abstract: A PVD method includes tilting a first magnetic element over a back side of a target. The first magnetic element is moved about an axis that extends through the target. Then, charged ions are attracted to bombard the target, such that particles are ejected from the target and are deposited over a surface of a wafer. By tilting the magnetic element relative to the target, the distribution of the magnetic fields can be more random and uniform.Type: GrantFiled: September 16, 2019Date of Patent: October 4, 2022Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Chia-Hsi Wang, Kun-Che Ho, Yen-Yu Chen
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Publication number: 20210238731Abstract: A physical vapor deposition (PVD) target for performing a PVD process is provided. The PVD target includes a backing plate and a target plate coupled to the backing plate. The target plate includes a sputtering source material and a dopant, with the proviso that the dopant is not impurities in the sputtering source material. The sputtering source material includes a diffusion barrier material.Type: ApplicationFiled: December 8, 2020Publication date: August 5, 2021Inventors: Chia-Hsi WANG, Yen-Yu CHEN, Yi-Chih CHEN, Shih Wei BIH
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Publication number: 20200105511Abstract: A PVD method includes tilting a first magnetic element over a back side of a target. The first magnetic element is moved about an axis that extends through the target. Then, charged ions are attracted to bombard the target, such that particles are ejected from the target and are deposited over a surface of a wafer. By tilting the magnetic element relative to the target, the distribution of the magnetic fields can be more random and uniform.Type: ApplicationFiled: September 16, 2019Publication date: April 2, 2020Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Chia-Hsi WANG, Kun-Che HO, Yen-Yu CHEN
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Patent number: 10113228Abstract: The present disclosure provides a method for controlling a semiconductor deposition operation. The method includes (i) identifying a first target lifetime in a physical vapor deposition (PVD) system; (ii) inputting the first target lifetime into a processor; (iii) outputting, by the processor, a plurality of first operation parameters according to a plurality of compensation curves; and (iv) performing the first operation parameters in the PVD system. The first operation parameters includes, but not limited to, an RF power tuning, a DC voltage tuning, a target to chamber pedestal spacing tuning, an AC bias tuning, an impedance tuning, a reactive gas flow tuning, an inert gas flow tuning, a chamber pedestal temperature tuning, or a combination thereof.Type: GrantFiled: June 20, 2014Date of Patent: October 30, 2018Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.Inventors: Chung-Liang Cheng, Sheng-Wei Yeh, Chia-Hsi Wang, Wei-Jen Chen, Yen-Yu Chen, Chang-Sheng Lee, Wei Zhang
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Publication number: 20150371847Abstract: The present disclosure provides a method for controlling a semiconductor deposition operation. The method includes (i) identifying a first target lifetime in a physical vapor deposition (PVD) system; (ii) inputting the first target lifetime into a processor; (iii) outputting, by the processor, a plurality of first operation parameters according to a plurality of compensation curves; and (iv) performing the first operation parameters in the PVD system. The first operation parameters includes, but not limited to, an RF power tuning, a DC voltage tuning, a target to chamber pedestal spacing tuning, an AC bias tuning, an impedance tuning, a reactive gas flow tuning, an inert gas flow tuning, a chamber pedestal temperature tuning, or a combination thereof.Type: ApplicationFiled: June 20, 2014Publication date: December 24, 2015Inventors: CHUNG-LIANG CHENG, SHENG-WEI YEH, CHIA-HSI WANG, WEI-JEN CHEN, YEN-YU CHEN, CHANG-SHENG LEE, WEI ZHANG