Abstract: A photo-detecting device includes a first semiconductor layer with a first dopant, a light-absorbing layer, a second semiconductor layer, and a semiconductor contact layer. The second semiconductor layer is located on the first semiconductor layer and has a first region and a second region, the light absorbing layer is located between the first semiconductor layer and the second semiconductor layer and has a third region and a fourth region, the semiconductor contact layer contacts the first region. The first region includes a second dopant and a third dopant, the second region includes second dopant, and the third region includes third dopant. The semiconductor contact layer has a first thickness greater than 50 ? and smaller than 1000 ?.

Abstract: A producing method of an aging delaying material for fruits or vegetables has steps of: adding and blending a silicon material, with the silicon material having porous structures or layer structures; gradually adding an ethylene reducing material and water or solvent in the silicon material during blending; and gradually removing the water or the solvent during blending until the water or the solvent is partially removed from the silicon material and the ethylene reducing material to form a dry mixing powder which is able to postpone fruits or vegetables becoming over mature.

Abstract: A producing method of an aging delaying material for fruits or vegetables having steps of: adding and blending a silicon material, the silicon material has porous structures or layer structures; gradually adding an ethylene reducing material and water or solvent in the silicon material during blending; and gradually removing the water or the solvent during blending until the water or the solvent being partially removed from the silicon material and the ethylene reducing material to form a dry mixing powder which is able to postpone fruits or vegetables become over mature.

Abstract: A manufacturing method of sputtering targets uses a direct-chill method to fabricate various aluminum and aluminum alloy ingots. Without the need of follow-up forging processes, the fabricated aluminum alloy ingots can be cut to attain aluminum and aluminum alloy sputtering targets. The method according to the present invention features the advantages of few process steps, high productivity, and high yield. In addition, the fabricated targets have small grains, fine precipitate phases, and homogeneous composition.

Abstract: A manufacturing method of sputtering targets uses a direct-chill method to fabricate various aluminum and aluminum alloy ingots. Without the need of follow-up forging processes, the fabricated aluminum alloy ingots can be cut to attain aluminum and aluminum alloy sputtering targets. The method according to the present invention features the advantages of few process steps, high productivity, and high yield. In addition, the fabricated targets have small grains, fine precipitate phases, and homogeneous composition.