Abstract: An electronic device includes a substrate, a driving element, a first insulating layer, a pixel electrode layer, and a common electrode layer. The driving element is disposed on the substrate. The first insulating layer is disposed on the driving element. The pixel electrode layer is disposed on the first insulating layer. The first insulating layer comprises a hole, and the pixel electrode layer is electrically connected to the driving element through the hole. The common electrode layer is disposed on the pixel electrode layer. The common electrode layer comprises a slit, and the slit has an edge, and the edge is disposed in the hole.

Abstract: A spin-orbit torque device is disclosed, which includes: a magnetic layer; and a non-magnetic layer adjacent to the magnetic layer and comprising a spin-Hall material, wherein the spin-Hall material comprises NixCu1-x alloy, and x is in a range from 0.4 to 0.8.

Abstract: A display device includes a display panel. The display panel has a functional display area. The functional display area includes a plurality of display pixels and a plurality of light transmitting regions. The plurality of display pixels are around by the plurality of the light transmitting regions. A boundary between one of the plurality of display pixels and one of the plurality of light transmitting regions comprises an arc segment.

Abstract: In some embodiments, the present disclosure relates to a semiconductor structure. The semiconductor structure includes a stacked semiconductor substrate having a semiconductor material disposed over a base semiconductor substrate. The base semiconductor substrate has a first coefficient of thermal expansion and the semiconductor material has a second coefficient of thermal expansion that is different than the first coefficient of thermal expansion. The stacked semiconductor substrate includes one or more sidewalls defining a crack stop ring trench that continuously extends in a closed path between a central region of the stacked semiconductor substrate and a peripheral region of the stacked semiconductor substrate surrounding the central region. The peripheral region of the stacked semiconductor substrate includes a plurality of cracks and the central region is substantially devoid of cracks.

Abstract: In some embodiments, the present disclosure relates to a semiconductor structure. The semiconductor structure includes a stacked semiconductor substrate having a semiconductor material disposed over a base semiconductor substrate. The base semiconductor substrate has a first coefficient of thermal expansion and the semiconductor material has a second coefficient of thermal expansion that is different than the first coefficient of thermal expansion. The stacked semiconductor substrate includes one or more sidewalls defining a crack stop ring trench that continuously extends in a closed path between a central region of the stacked semiconductor substrate and a peripheral region of the stacked semiconductor substrate surrounding the central region. The peripheral region of the stacked semiconductor substrate includes a plurality of cracks and the central region is substantially devoid of cracks.

Abstract: A method of manufacturing a semiconductor device includes providing a substrate. A channel layer is formed on the substrate. A barrier layer is formed on the channel layer. A source and a drain are formed on the barrier layer. A recess is formed in the barrier layer, in which the recess has a bottom surface, and a portion of the barrier underneath the recess has a thickness. A first dielectric layer is formed to cover the bottom surface of the recess. A charge trapping layer is formed on the first dielectric layer. A first ferroelectric material layer is formed on the charge trapping layer. A second dielectric layer is formed on the first ferroelectric material layer. A second ferroelectric material layer is formed on the second dielectric layer. A gate is formed over the second ferroelectric material layer.

Abstract: A semiconductor device includes a substrate, a channel layer, a barrier layer, a ferroelectric composite material layer, a gate, a source and a drain. The channel layer and the barrier layer having a recess are disposed on the substrate in sequence. The ferroelectric composite material layer including a first dielectric layer, a charge trapping layer, a first ferroelectric material layer, a second dielectric layer and a second ferroelectric material layer is disposed in the recess. The gate is disposed on the ferroelectric composite material layer. The source and the drain are disposed on the barrier layer.

Abstract: In some embodiments, the present disclosure relates to a semiconductor structure. The semiconductor structure includes a stacked semiconductor substrate having a semiconductor material disposed over a base semiconductor substrate. The base semiconductor substrate has a first coefficient of thermal expansion and the semiconductor material has a second coefficient of thermal expansion that is different than the first coefficient of thermal expansion. The stacked semiconductor substrate includes one or more sidewalls defining a crack stop ring trench that continuously extends in a closed path between a central region of the stacked semiconductor substrate and a peripheral region of the stacked semiconductor substrate surrounding the central region. The peripheral region of the stacked semiconductor substrate includes a plurality of cracks and the central region is substantially devoid of cracks.

Abstract: A semiconductor device includes a substrate, a channel layer, a barrier layer, a ferroelectric composite material layer, a gate, a source and a drain. The channel layer and the barrier layer having a recess are disposed on the substrate in sequence. The ferroelectric composite material layer including a first dielectric layer, a charge trapping layer, a first ferroelectric material layer, a second dielectric layer and a second ferroelectric material layer is disposed in the recess. The gate is disposed on the ferroelectric composite material layer. The source and the drain are disposed on the barrier layer.

Abstract: A semiconductor device includes a substrate, a channel layer, a barrier layer, a recess, a charge trapping layer, a ferroelectric material layer, a gate, a source and a drain. The channel layer is disposed on the substrate. The barrier layer is disposed on the channel layer. The barrier layer has a recess, and a portion of the barrier layer under the recess has a thickness. The source and the drain are disposed on the barrier layer. The charge trapping layer covers the bottom of the recess. The ferroelectric material is disposed on the charge trapping layer. The gate is disposed on the ferroelectric material.

Abstract: A power converter and a method are disclosed. The power converter includes a plurality of converting modules and a plurality of switching circuits. Each of the converting modules includes a bypass element configured to be shorted when a fault occurs. The switching circuits are electrically coupled in series to each other and electrically coupled in parallel to the converting modules respectively. Any one of the switching circuits is configured to be shorted when the bypass element of the corresponding converting module is shorted.

Abstract: A power converter and a method are disclosed. The power converter includes a plurality of converting modules and a plurality of switching circuits. Each of the converting modules includes a bypass element configured to be shorted when a fault occurs. The switching circuits are electrically coupled in series to each other and electrically coupled in parallel to the converting modules respectively. Any one of the switching circuits is configured to be shorted when the bypass element of the corresponding converting module is shorted.

Abstract: The present invention discloses a sensor device with dark current compensation and control method thereof. The sensor device includes: a sensor circuit, for sensing a physical property or a chemical property to generate an analog sensing signal; a dark current compensation circuit, which is coupled to the sensor circuit, for processing the analog sensing signal and generating an analog compensated signal according to a reference signal; and a convertor circuit, which is coupled to the dark current compensation circuit, for generating a digital sensing signal according to the analog compensated signal.

Abstract: A current-steering DAC circuit for switching a light emitting diode, the current-steering DAC circuit including a current-steering DAC and a resistor. The current-steering DAC outputs a stable current and includes a plurality of current-steering units with a first output end and a second output end. The first output end is electrically connected to the light emitting diode, and the second output end is electrically connected to the resistor. Each of the current-steering units includes a current source and a switching circuit. A first end of the switching circuit is electrically connected to the current source. A second end and a third end of the switching circuit are electrically connected to the first output end and the second output end of the current-steering DAC, respectively. The switching circuit is controlled by a switching signal so as to selectively connect one of the second end and the third end to the first end.

Abstract: The present invention discloses a sensor device with dark current compensation and control method thereof. The sensor device includes: a sensor circuit, for sensing a physical property or a chemical property to generate an analog sensing signal; a dark current compensation circuit, which is coupled to the sensor circuit, for processing the analog sensing signal and generating an analog compensated signal according to a reference signal; and a convertor circuit, which is coupled to the dark current compensation circuit, for generating a digital sensing signal according to the analog compensated signal.

Abstract: This disclosure provides an electronic device and a method for displaying an event used for presenting a first type of event and a second type of event to a user. The method includes the following steps. A time interval inputted by the user is received. A record of the first type of event and a record of the second type of event are searched according to the time interval to determine whether there are the first type of event and the second type of event taking place in the time interval. A first related information of the first type of event and a second related information of the second type of event taking place in the time interval are displayed. Displaying locations of the first related information and the second related information indicate time when the first type of event and the second type of event take place, respectively.

Abstract: An electronic device includes an image output module and a button module. The image output module has a storage unit storing a resolution table, and the resolution table has a plurality of resolution. The button module outputs a resolution adjusting signal. The image output module outputs an image having predetermined resolution and adjusts resolution of the image after receiving the resolution adjusting signal. This invention also provides an adjusting control method of projection resolution.

Abstract: A multimedia playing device and an operation method thereof are provided. The multimedia playing device stores an image having a plurality of multimedia options. The operation method sequentially includes the following steps. A portion of the image is defined as a projecting area. The portion of the image corresponding to the projecting area is projected. A movement of the multimedia playing device is sensed. According to the movement of the multimedia playing device, the projecting area is moved in the image. Thereby, the multimedia options are presented in a projecting mode, and a user can browse the multimedia options in a dynamic sensing mode thus to facilitate search and selection.

Abstract: A system for displaying a message includes a first electronic device and a second electronic device. The first electronic device includes a touch module, a first projection module, a first positioning module, and a first transceiving module. The touch module receives a touch signal and generates a first image data; the first projection module projects the first image data; the first positioning module provides a first positioning data according to a location of the first electronic device; the first transceiving module transmits a first message including the first positioning data and the first image data. The second electronic device includes a second transceiving module and a second projection module. The second transceiving module receives the first message; the second projection module projects the first image data. Therefore, the system for displaying a message presents the first image data in a specific condition.