Abstract: A memory structure including a substrate, a first dielectric layer, a second dielectric layer, a charge storage layer, an oxide layer, and a conductive layer is provided. The first dielectric layer is disposed on the substrate. The second dielectric layer is disposed on the first dielectric layer. The charge storage layer is disposed between the first dielectric layer and the second dielectric layer. The oxide layer is located at two ends of the charge storage layer and is disposed between the first dielectric layer and the second dielectric layer. The conductive layer is disposed on the second dielectric layer.

Abstract: A semiconductor device includes a substrate, having a cell region and a core region. A plurality of gate structures is disposed on the substrate in the cell region. Each of the gate structures has a spacer on a sidewall of the gate structures. The gate structure includes a charge storage layer, on the substrate; a first polysilicon layer on the charge storage layer; and a mask layer on the first polysilicon layer, the mask layer comprising a first polishing stop layer on top. A preliminary material layer also with the first polishing stop layer on top is disposed on the substrate at the core region. A second polysilicon layer is filled between the gate structures at the cell region. A second polishing stop layer is on the second polysilicon layer. The first polishing stop layer and the second polishing stop layer are same material and same height.

Abstract: An anti-glare welding apparatus includes a switch and a controller. The controller is electrically connected to the switch. When the controller determines that the switch is switched from an OFF state to an ON state, the controller generates a welding helmet turn-on signal to switch on a filter of a welding helmet. The controller further generates a welding machine turn-on signal after a first delay time to switch on a welding machine. The filter of the welding helmet can be fully darkened during the first delay time when receiving the welding helmet turn-on signal, and the welding machine is switched on after the filter of the welding helmet is fully darkened. Therefore, there is no welding arc when the filter is darkening, and the eyes of the welding worker can be fully protected from damage.

Abstract: An optical lens, in order from an object side to an image-forming side, includes: a first lens, a second lens, a third lens, a fourth lens, a fifth lens, a sixth lens, a seventh lens and an eighth lens, respectively having negative, negative, positive, positive, negative, positive, positive and negative refractive power. The curvature radius of the object-side surface of the first lens is greater than the curvature radius of the image-side surface of the first lens; the image-side surface of the eighth lens has an effective radius r and a vertex point, H is a distance between the vertex point and the optical axis, the image-side surface of the eighth lens intersects with the optical axis at an intersection point, d is a distance between a projected position of the vertex point on the optical axis and the intersection point, and |r/d|?30 and/or |r/H|?2.

Abstract: A manufacturing method of a proton battery and a proton battery module are provided. The manufacturing method of the proton battery includes the steps of providing a positive electrode, a negative electrode, and a polymer exchange membrane, and assembling the positive electrode, the negative electrode, and the polymer exchange membrane, in which the polymer exchange membrane is interposed between the positive electrode and the negative electrode. The step of providing the negative electrode at least includes forming a carbon layer on a substrate, and performing a polarization process on the carbon layer.

Abstract: An optical lens in order from an object side to an image-forming side includes a first lens, a second lens, a third lens, a fourth lens, a fifth lens, a sixth lens, and a seventh lens. An object-side surface of the first lens has a curvature radius R1, an image-side surface of the first lens has a curvature radius R2, an object-side surface of the third lens has a curvature radius R5, an image-side surface of the third lens has a curvature radius R6, an image-side surface of the seventh lens has an inflection point, a distance between the inflection point and an optical axis is h14, and the seventh lens has a radius H14. The optical lens satisfies at least one of the following conditions: 0.01?|R2/R1|; |R2/R1|?0.6; 0?|R5/R6|; |R5/R6|?2; 0.3?|h14/H14|; and |h14/H14|?0.9.

Abstract: Systems and methods for screening enzyme variants are described, wherein the enzyme variants may catalyze a reaction that is cofactor-dependent or cofactor-independent.

Abstract: A sensor module for detecting particulate matter of an aerosol, which may include a source of electromagnetic radiation and a collector for electromagnetic radiation. The collector may include a cavity and a first opening for the aerosol. The cavity may be reflective for the electromagnetic radiation. The first opening may allow exchange of the aerosol in and out of the cavity. The source of electromagnetic radiation may be arranged to project the electromagnetic radiation onto the aerosol which may be scattered as scattered electromagnetic radiation. The sensor module may include a detector of electromagnetic radiation arranged to detect the scattered electromagnetic radiation that is reflected by the collector. The source and the detector may be arranged on a same side of the collector. The source and the detector may be arranged at a same aperture of the collector.

Abstract: A semiconductor device includes a substrate, having a cell region and a core region. A plurality of gate structures is disposed on the substrate in the cell region. Each of the gate structures has a spacer on a sidewall of the gate structures. The gate structure includes a charge storage layer, on the substrate; a first polysilicon layer on the charge storage layer; and a mask layer on the first polysilicon layer, the mask layer comprising a first polishing stop layer on top. A preliminary material layer also with the first polishing stop layer on top is disposed on the substrate at the core region. A second polysilicon layer is filled between the gate structures at the cell region. A second polishing stop layer is on the second polysilicon layer. The first polishing stop layer and the second polishing stop layer are same material and same height.

Abstract: A respiratory function testing system includes an air transforming device, a sound reception device and an operation device. The air transforming device is configured to collect exhaled and/or inhaled air for a predetermined period and generate a wide frequency range sound signal according to the collected respired air. The wide frequency range sound signal at least contains an ultrasonic signal. The sound reception device is configured to receive and record the wide frequency range sound signal as an audio file. The operation device is in communication with the sound reception device and is configured to receive and compute the audio file to generate a respiratory function parameter. Besides, the recorded wide frequency range sound signal may be converted into a spectrogram for further applications, and the computation of the audio file can be replaced by analyzing the spectrogram. A respiratory function testing method corresponding to the respiratory function testing system is also provided.

Abstract: A display device and a backlight module thereof are provided. The backlight module includes a collimated light source and a light guide plate. The collimated light source configured to generate a collimated light. The light guide plate has a bottom surface and a top surface opposite to each other, and a light entrance surface connected to ends of the bottom and top surfaces respectively for receiving collimated light from the collimated light source. The bottom surface inclines toward the top surface from the end of the bottom surface connected to the light entrance surface. A plurality of first grooves are disposed side by side on the bottom surface and respectively extend along the light entrance surface. The first groove has a first light receiving surface with a first end extending toward the top surface and inclining away from the light entrance surface.

Abstract: Spirometer, mouthpiece tube and inspection method thereof. The spirometer includes at least the mouthpiece tube and an ultrasound detector configured to detect the ultrasound generated by the gas flowing through the mouthpiece tube, wherein the mouthpiece tube has a shell having an opened end, a closed or opened end, and an ultrasonic generator configured to be inserted into different portions of the shell in different situations. Therefore, by inserting the ultrasonic generator into different portions of the shell during expiration and inspiration, the gas flow during expiration and inspiration may be converted into the ultrasonic signal and then maybe detected and analyzed.

Abstract: A semiconductor device includes a substrate, having a cell region and a core region. A plurality of gate structures is disposed on the substrate in the cell region. Each of the gate structures has a spacer on a sidewall of the gate structures. The gate structure includes a charge storage layer, on the substrate; a first polysilicon layer on the charge storage layer; and a mask layer on the first polysilicon layer, the mask layer comprising a first polishing stop layer on top. A preliminary material layer also with the first polishing stop layer on top is disposed on the substrate at the core region. A second polysilicon layer is filled between the gate structures at the cell region. A second polishing stop layer is on the second polysilicon layer. The first polishing stop layer and the second polishing stop layer are same material and same height.

Abstract: A display device and a backlight module thereof are provided. The backlight module includes a collimated light source and a light guide plate. The collimated light source configured to generate a collimated light. The light guide plate has a bottom surface and a top surface opposite to each other, and a light entrance surface connected to ends of the bottom and top surfaces respectively for receiving collimated light from the collimated light source. The bottom surface inclines toward the top surface from the end of the bottom surface connected to the light entrance surface. A plurality of first grooves are disposed side by side on the bottom surface and respectively extend along the light entrance surface. The first groove has a first light receiving surface with a first end extending toward the top surface and inclining away from the light entrance surface.

Abstract: An optical lens is provided. The optical lens includes, in order from an object side to an image-forming side, a first lens having refractive power, a second lens having refractive power, a third lens having positive refractive power, a fourth lens having positive refractive power and a fifth lens having refractive power. The object-side surface of the first lens is a concave surface or a flat surface. The overall optical effect of the first lens and the second lens is negative refractive power. The refractive rate on the object-side surface and/or the image-side surface of the fifth lens from the center point in a radial direction away from the optical axis changes in the same tendency.

Abstract: A welding helmet includes a helmet shell and a lens device mounted on the helmet shell. The lens device includes a filter control module and a single LCD panel. The logic control module controls the transmittance of the single LCD panel based on a sensed light signal and a shading-level signal designated by a user. Therefore, when the welding helmet is operated in an environment having intense light such as a welding arc, the single LCD panel will turn dark and lower its transmittance to block the intense light.

Abstract: An optical lens, in order from an object side to an image-forming side, includes: a first lens having positive refractive power, a second lens having positive refractive power, a third lens having positive refractive power, and a fourth lens. The distance from an outer edge of the image-side surface of the fourth lens to an optical axis of the optical lens is H. The image-side surface of the fourth lens has an inflection point, and the distance from the inflection point to the optical axis is h. The image-side surface of the fourth lens and the optical axis intersect at an intersection point. The distance between a projected position of the inflection point on the optical axis and the intersection point is d0. The optical lens satisfies at least one of the following conditions: 0.6?h/H, h/H?0.95, 3.75?H/d0 and H/d0?30.

Abstract: A semiconductor device includes a substrate, having a cell region and a core region. A plurality of gate structures is disposed on the substrate in the cell region. Each of the gate structures has a spacer on a sidewall of the gate structures. The gate structure includes a charge storage layer, on the substrate; a first polysilicon layer on the charge storage layer; and a mask layer on the first polysilicon layer, the mask layer comprising a first polishing stop layer on top. A preliminary material layer also with the first polishing stop layer on top is disposed on the substrate at the core region. A second polysilicon layer is filled between the gate structures at the cell region. A second polishing stop layer is on the second polysilicon layer. The first polishing stop layer and the second polishing stop layer are same material and same height.

Abstract: An optical lens, in order from an object side to an image-forming side, includes: a first lens, a second lens, a third lens, a fourth lens, a fifth lens, a sixth lens, a seventh lens and an eighth lens, respectively having negative, negative, positive, positive, negative, positive, positive and negative refractive power. The curvature radius of the object-side surface of the first lens is greater than the curvature radius of the image-side surface of the first lens; the image-side surface of the eighth lens has an effective radius r and an inflection point, H is a distance between the inflection point and the optical axis, the image-side surface of the eighth lens intersects with the optical axis at an intersection point, d is a distance between a projected position of the inflection point on the optical axis and the intersection point, and |r/d|?30 and/or |r/H|?2.

Abstract: A manufacturing method of a proton battery and a proton battery module are provided. The manufacturing method of the proton battery includes the steps of providing a positive electrode, a negative electrode, and a polymer exchange membrane, and assembling the positive electrode, the negative electrode, and the polymer exchange membrane, in which the polymer exchange membrane is interposed between the positive electrode and the negative electrode. The step of providing the negative electrode at least includes forming a carbon layer on a substrate, and performing a polarization process on the carbon layer.