Abstract: A fingerprint sensor includes a die, a plurality of conductive structures, an encapsulant, a plurality of conductive patterns, a first dielectric layer, a second dielectric layer, and a redistribution structure. The die has an active surface and a rear surface opposite to the active surface. The conductive structures surround the die. The encapsulant encapsulates the die and the conductive structures. The conductive patterns are over the die and are electrically connected to the die and the conductive structures. Top surfaces of the conductive patterns are flat. The first dielectric layer is over the die and the encapsulant. A top surface of the first dielectric layer is coplanar with top surfaces of the conductive patterns. The second dielectric layer covers the first dielectric layer and the conductive patterns. The redistribution structure is over the rear surface of the die.

Abstract: A keyswitch structure includes a base, a cap disposed corresponding to the base, a restoring member disposed between the base and the cap, and a tactile adjustment unit. The cap has a cam portion movable relative to the base. The restoring member is configured to provide a restoring force to enable the cam portion to move away from the base. The tactile adjustment unit is disposed corresponding to the cam portion and includes a holder and a tactile feedback member mounted on the holder. The holder is movable relative to the base to change a position of the tactile feedback member relative to the cam portion, so as to change a pressing force required for the cam portion to move toward the base.

Abstract: A manufacturing method of a semiconductor package including the following steps is provided. A redistribution structure is formed over an encapsulated semiconductor device carried by a carrier, wherein the redistribution structure includes an organic polymer layer and a redistribution circuit layer electrically connected to the semiconductor device. An inorganic protection layer is formed to entirely cover an upper surface of the redistribution structure, wherein an oxygen and/or water vapor permeability of the inorganic protection layer is substantially lower than an oxygen and/or vapor permeability of the organic polymer layer. An adhesive is formed on the inorganic protection layer. An insulating cover is adhered on the inorganic protection layer through the adhesive.

Abstract: A battery assembly includes a battery holding unit and a battery unit removably held by the battery holding unit. The battery unit includes a battery, a first engaging portion, and a second engaging portion. The battery holding unit includes a holding member selectively engaged with the first engaging portion or the second engaging portion to hold the battery unit at a first position or a second position. When the holding member and the first engaging portion relatively move away from each other along a disengagement direction, the battery unit moves along a detachment direction from the first position to the second position at which the holding member engages with the second engaging portion, and the second engaging portion is allowed to move to disengage from the holding member, so that the battery unit moves again along the detachment direction to be removed from the battery holding unit.

Abstract: A circuit substrate includes a base substrate, a plurality of conductive vias, a first redistribution circuit structure, a second redistribution circuit structure and a semiconductor die. The plurality of conductive vias penetrate through the base substrate. The first redistribution circuit structure is located on the base substrate and connected to the plurality of conductive vias. The second redistribution circuit structure is located over the base substrate and electrically connected to the plurality of conductive vias, where the second redistribution circuit structure includes a plurality of conductive blocks, and at least one of the plurality of conductive blocks is electrically connected to two or more than two of the plurality of conductive vias, and where the base substrate is located between the first redistribution circuit structure and the second redistribution circuit structure.

Abstract: A package structure includes a carrier substrate, a die, and a first redistribution structure. The carrier substrate has a first surface and a second surface opposite to the first surface. The carrier substrate includes an insulating body and through carrier vias (TCV) embedded in the insulating body. The die is disposed over the firs surface of the carrier substrate. The die is electrically connected to the TCVs. The first redistribution structure is disposed on the second surface of the carrier substrate.

Abstract: A semiconductor package is provided. The semiconductor package includes a heat dissipation substrate including a first conductive through-via embedded therein; a sensor die disposed on the heat dissipation substrate; an insulating encapsulant laterally encapsulating the sensor die; a second conductive through-via penetrating through the insulating encapsulant; and a first redistribution structure and a second redistribution structure disposed on opposite sides of the heat dissipation substrate. The second conductive through-via is in contact with the first conductive through-via. The sensor die is located between the second redistribution structure and the heat dissipation substrate. The second redistribution structure has a window allowing a sensing region of the sensor die receiving light. The first redistribution structure is electrically connected to the sensor die through the first conductive through-via, the second conductive through-via and the second redistribution structure.

Abstract: A package structure and a method of manufacturing the same are provided. The package structure includes a die, an encapsulant, a first redistribution line (RDL) structure, a second RDL structure, a conductive terminal, and a through via. The encapsulant laterally encapsulates the die. The first redistribution line (RDL) structure on a first side of the die and the encapsulant, wherein the first RDL structure comprises a dielectric layer and a redistribution layer in the dielectric layer. The second RDL structure is located on a second side of the die and the encapsulant. The conductive terminal is connected to the redistribution layer. The through via extends through the encapsulant and the redistribution layer to contact the conductive terminal and the second RDL structure.

Abstract: A method for monitoring industrial devices includes: obtaining an access token of a cloud storage server by a management device; sending a certificate request message to the management device by a user apparatus; performing a certificate verification on the user apparatus by the management device according to the certificate request message, and sending a certificate pass message with the access token to the user apparatus by the management device after passing the certificate verification; sending an access request message with the access token and identification information to the cloud storage server by the user apparatus; and providing device data of an industrial device terminal to the user apparatus by the cloud storage server according to the access token and a privilege of the identification information.

Abstract: A semiconductor package is provided. The semiconductor package includes a heat dissipation substrate including a first conductive through-via embedded therein; a sensor die disposed on the heat dissipation substrate; an insulating encapsulant laterally encapsulating the sensor die; a second conductive through-via penetrating through the insulating encapsulant; and a first redistribution structure and a second redistribution structure disposed on opposite sides of the heat dissipation substrate. The second conductive through-via is in contact with the first conductive through-via. The sensor die is located between the second redistribution structure and the heat dissipation substrate. The second redistribution structure has a window allowing a sensing region of the sensor die receiving light. The first redistribution structure is electrically connected to the sensor die through the first conductive through-via, the second conductive through-via and the second redistribution structure.

Abstract: A package structure and a method of manufacturing the same are provided. The package structure includes a die, a redistribution layer (RDL) structure, a through integrated fan-out via (TIV) and a conductive terminal. The RDL structure is disposed on and electrically connected to the die. The TIV is laterally aside the die and extends to contact a bottom surface and a sidewall of a redistribution layer of the RDL structure. The conductive terminal is electrically connected to the die through the RDL structure and the TIV.

Abstract: A method for manufacturing a semiconductor device includes forming contacts disposed in a dielectric layer. The method of forming the contacts includes forming contact holes and then filling with a conductive material. The method of forming the contact holes includes steps of forming openings in the dielectric layer to expose active regions, introducing a first oxygen plasma and a first fluorine plasma to remove by-products and oxidize inner surfaces of the openings, introducing a second oxygen plasma and a second fluorine plasma to remove the oxidized inner surfaces and repair the active regions, introducing a third oxygen plasma to oxidize inner surfaces again to form an oxide layer, and removing the oxide layer. The cross-sectional structure of two adjacent contact holes includes a capital, a base, and a shaft between the capital and the base, wherein the shaft has a smaller width than the base and the capital.

Abstract: A keyswitch includes a circuit board, a bottom board abutting against the circuit board, a cap, a light receiver and a light emitter disposed on the circuit board and opposite to each other, a base disposed on the circuit board, a cover disposed on the base, a first elastic member disposed through the cover and the base, a support device, and a second elastic member fixed to the base and having a flexible rod. The support device is movably connected to the cap and bottom board and has a sheet structure. When the cap is pressed, the sheet structure blocks light transmission between the light emitter and the light receiver to generate a triggering signal. When the cap is pressed to make the flexible rod deform downward with the sheet structure and then cross the sheet structure, the flexible rod is released to collide with the cover to make sound.

Abstract: A semiconductor device and a manufacturing method of the same are provided. The semiconductor device includes a substrate having a plurality of active regions, at least one dielectric layer formed on the substrate, and a plurality of contacts disposed in the dielectric layer and contacting with the active regions. The contact is a barrel-shaped structure with a middle portion, a head portion having a perimeter small than that of the middle portion, and an end portion having a perimeter small than that of the middle portion.

Abstract: A semiconductor package includes a lower encapsulated semiconductor device, a lower redistribution structure, an upper encapsulated semiconductor device, and an upper redistribution structure. The lower redistribution structure is disposed over and electrically connected to the lower encapsulated semiconductor device. The upper encapsulated semiconductor device is disposed over the lower encapsulated semiconductor device and includes a sensor die having a pad and a sensing region, an upper encapsulating material at least laterally encapsulating the sensor die, and an upper conductive via extending through the upper encapsulating material and connected to the lower redistribution structure. The upper redistribution structure is disposed over the upper encapsulated semiconductor device. The upper redistribution structure covers the pad of the sensor die and has an opening located on the sensing region of the sensor die.

Abstract: A semiconductor package includes a first wafer, a second wafer, and an interconnect. The first wafer includes a first die, a first encapsulating material encapsulating the first die, and a first redistribution structure disposed over the first die and the first encapsulating material. The second wafer includes a second die, a second encapsulating material encapsulating the second die, and a second redistribution structure disposed over the second die and the second encapsulating material, wherein the second redistribution structure faces the first redistribution structure. The interconnect is disposed between the first wafer and the second wafer and electrically connecting the first redistribution structure and the second redistribution structure, wherein the interconnect includes a substrate and a plurality of through vias extending through the substrate for connecting the first redistribution structure and the second redistribution structure.

Abstract: A package structure including a semiconductor die, an insulating encapsulant, and a redistribution layer is provided. The semiconductor die includes a semiconductor substrate, a plurality of metallization layers disposed on the semiconductor substrate, and a passivation layer disposed on the plurality of metallization layers. The passivation layer has a first opening that partially expose a topmost layer of the plurality of metallization layers. The insulating encapsulant is encapsulating the semiconductor die. The redistribution layer includes at least a first dielectric layer and a first conductive layer stacked on the first dielectric layer. The first dielectric layer has a second opening that overlaps with the first opening, and a width ratio of the second opening to the first opening is in a range of 2.3:1 to 12:1. The first conductive layer is electrically connected to the topmost layer of the plurality of metallization layers through the first and second openings.

Abstract: A manufacturing method of a semiconductor package including the following steps is provided. A redistribution structure is formed over an encapsulated semiconductor device carried by a carrier, wherein the redistribution structure includes an organic polymer layer and a redistribution circuit layer electrically connected to the semiconductor device. An inorganic protection layer is formed to entirely cover an upper surface of the redistribution structure, wherein an oxygen and/or water vapor permeability of the inorganic protection layer is substantially lower than an oxygen and/or vapor permeability of the organic polymer layer. An adhesive is formed on the inorganic protection layer. An insulating cover is adhered on the inorganic protection layer through the adhesive.

Abstract: A package structure includes a thermal dissipation structure, a first encapsulant, a die, a through integrated fan-out via (TIV), a second encapsulant, and a redistribution layer (RDL) structure. The thermal dissipation structure includes a substrate and a first conductive pad disposed over the substrate. The first encapsulant laterally encapsulates the thermal dissipation structure. The die is disposed on the thermal dissipation structure. The TIV lands on the first conductive pad of the thermal dissipation structure and is laterally aside the die. The second encapsulant laterally encapsulates the die and the TIV. The RDL structure is disposed on the die and the second encapsulant.

Abstract: A package structure including a first redistribution layer, a semiconductor die, through insulator vias, an insulating encapsulant and a second redistribution layer. The first redistribution layer includes a dielectric layer, a conductive layer, and connecting portions electrically connected to the conductive layer. The dielectric layer has first and second surfaces, the connecting portions has a first side, a second side, and sidewalls joining the first side to the second side. The first side of the connecting portions is exposed from and coplanar with the first surface of the dielectric layer. The semiconductor die is disposed on the second surface of the dielectric layer. The through insulator vias are connected to the conductive layer. The insulating encapsulant is disposed on the dielectric layer and encapsulating the semiconductor die and the through insulator vias. The second redistribution layer is disposed on the semiconductor die and over the insulating encapsulant.