Abstract: A semiconductor-on-insulator (SOI) structure and a method for forming the SOI structure. The method includes forming a first dielectric layer on a first semiconductor layer. A second semiconductor layer is formed over an etch stop layer. A cleaning solution is provided to a first surface of the first dielectric layer. The first dielectric layer is bonded under the second semiconductor layer in an environment having a substantially low pressure. An index guiding layer may be formed over the second semiconductor layer. A third semiconductor layer is formed over the second semiconductor layer. A distance between a top of the third semiconductor layer and a bottom of the second semiconductor layer varies between a maximum distance and a minimum distance. A planarization process is performed on the third semiconductor layer to reduce the maximum distance.

Abstract: Semiconductor device structures having gate structures with tunable threshold voltages are provided. Various geometries of device structure can be varied to tune the threshold voltages. In some examples, distances from tops of fins to tops of gate structures can be varied to tune threshold voltages. In some examples, distances from outermost sidewalls of gate structures to respective nearest sidewalls of nearest fins to the respective outermost sidewalls (which respective gate structure overlies the nearest fin) can be varied to tune threshold voltages.

Abstract: A water-based polyurethane resin and a method for manufacturing the same are provided. The method for manufacturing the water-based polyurethane includes: a preparation step of a prepolymer, a dilution step of the prepolymer, a water dispersion and chain extension step, and an acrylic synthesis step. The method further includes mixing polyol and polyisocyanate to obtain a prepolymer, and diluting the prepolymer by adding acrylic monomer in the prepolymer. In the water-based polyurethane resin, at least one of the polyhydric alcohol, polyisocyanate, and the acrylic monomer includes a compound with a cyclic structure.

Abstract: Provided is a semiconductor substrate with a balance stress. The semiconductor substrate includes a ceramics base, a nucleation layer and a first buffer layer doped with a first dopant. The ceramics base has an off-cut angle other than 0 degree. The nucleation layer is disposed on the ceramics base. The first buffer layer is disposed on the nucleation layer. The first dopant includes C, Fe or a combination thereof. The first buffer layer provides compressive stress to the ceramic base. The concentration of the first dopant in the first buffer layer is increased away from the ceramics base. The curvature of the semiconductor substrate is between 16 km?1 and ?16 km?1.

Abstract: An antibacterial modified polyurethane resin is provided. The antibacterial modified polyurethane resin includes a polyurethane resin and an antibacterial modifying agent grafted on the polyurethane resin. The antibacterial modifying agent has formula (I) as follows: R1 is a substituent of —(CH2)a—, R2 is a substituent of —(CH2)bCH3—, a is a positive integer that is greater than or equal to 3, and b is a positive integer that is greater than or equal to 12. The antibacterial modifying agent has three methoxyl groups, at least two of the three methoxyl groups bond to the polyurethane resin through covalent bonds. In the antibacterial modified polyurethane resin, a chloride ion of the antibacterial modifying agent is configured to be ionized, so that a nitrogen atom is configured to be positively charged to attract a bacteria in an environment.

Abstract: A water-based polyurethane resin and a method for manufacturing the same are provided. The method for manufacturing the water-based polyurethane includes: a preparation step of a prepolymer, a dilution step of the prepolymer, a water dispersion and chain extension step, and an acrylic synthesis step. The method further includes mixing polyol and polyisocyanate to obtain a prepolymer, and diluting the prepolymer by adding acrylic monomer in the prepolymer. In the water-based polyurethane resin, at least one of the polyhydric alcohol, polyisocyanate, and the acrylic monomer includes a compound with a cyclic structure.

Abstract: An organosilicon-modified polyurethane resin and a method for producing the same are provided. The organosilicon-modified polyurethane resin includes organosilicon ingredients obtained by chemically bonding a first organosilicon chain extender having a chemical structure of formula (I) and a second organosilicon chain extender having a chemical structure of formula (II) into a molecular structure of a polyurethane resin during a polymerization reaction: in which R11 is a substituent of —CH2CH2— or —CH2CH(CH3)—, n1 is a positive integer between 0 and 50, m1 is a positive integer between 0 and 50, and x1 is a positive integer between 4 and 100; in which R21 is a substituent of —CH3 or —CH2CH3, R22 is a substituent of —CH2CH2CH2—, and R23 is a substituent of —CH2CH2— or —CH2CH(CH3)—, n2 is a positive integer between 6 and 130, and m2 is a positive integer between 4 and 50.

Abstract: A method for preparing an aqueous polyurethane dispersion includes the following steps. The method characterized in that it introduces an ethoxy group to sodium ethylenediamine sulfonate (H2N—CH2CH2NHCH2CH2SO3Na) serving as an anionic chain extender to form sodium ethylenediamino ethoxyethyl sulfonate (H2NCH2CH2NHCH2CH2OCH2CH2SO3Na). Next, hydrophilic groups of sodium ethylenediamino ethoxyethyl sulfonate are used to prepare an aqueous polyurethane to improve the flowability of the resin, in which the polyurethane prepolymer has an isocyanate group at its end. More than one acrylate monomer is used for dilution and reduction of viscosity, and hydrophilic and amine groups containing sulfonate is used for water dispersion and to carry out a chain extension reaction. After that, an initiator is added for acrylic polymerization, so as to modify polyurethane with graft acrylic.

Abstract: An ultraviolet C light-emitting diode including an n-type semiconductor layer, a p-type semiconductor layer, an active layer, a two-dimensional hole gas (2DHG) inducing layer, and an electron blocking layer is provided. The active layer is disposed between the n-type semiconductor layer and the p-type semiconductor layer, wherein a wavelength of a maximum peak of a spectrum emitted by the active layer ranges from 230 nm to 280 nm. The two-dimensional hole gas (2DHG) inducing layer is disposed between the active layer and the p-type semiconductor layer. A concentration of magnesium in the 2DHG inducing layer is less than 1017 atoms/cm3. The electron blocking layer is disposed between the p-type semiconductor layer and the 2DHG inducing layer. A concentration of magnesium in a part of the electron blocking layer adjacent to the 2DHG inducing layer is greater than 1019 atoms/cm3.

Abstract: An ultraviolet C light-emitting diode includes an n-type semiconductor layer, a p-type semiconductor layer, an active layer, a first electron blocking layer, and a second electron blocking layer. The active layer is disposed between the n-type semiconductor layer and the p-type semiconductor layer. The wavelength of the maximum peak of the spectrum emitted by the active layer ranges from 230 nanometers to 280 nanometers. The concentration of magnesium in the active layer is less than 1017 atoms/cm3. The first electron blocking layer and the second electron blocking layer are disposed between the p-type semiconductor layer and the active layer. The concentration of magnesium in the second electron blocking layer is greater than that of the first electron blocking layer and is greater than 1018 atoms/cm3.

Abstract: An ultraviolet C light-emitting diode including an n-type semiconductor layer, a p-type semiconductor layer, an active layer, a two-dimensional hole gas (2DHG) inducing layer, and an electron blocking layer is provided. The active layer is disposed between the n-type semiconductor layer and the p-type semiconductor layer, wherein a wavelength of a maximum peak of a spectrum emitted by the active layer ranges from 230 nm to 280 nm. The two-dimensional hole gas (2DHG) inducing layer is disposed between the active layer and the p-type semiconductor layer. A concentration of magnesium in the 2DHG inducing layer is less than 1017 atoms/cm3. The electron blocking layer is disposed between the p-type semiconductor layer and the 2DHG inducing layer. A concentration of magnesium in a part of the electron blocking layer adjacent to the 2DHG inducing layer is greater than 1019 atoms/cm3.

Abstract: A method for preparing an aqueous polyurethane dispersion includes the following steps. The method characterized in that it introduces an ethoxy group to sodium ethylenediamine sulfonate (H2N—CH2CH2NHCH2CH2SO3Na) serving as an anionic chain extender to form sodium ethylenediamino ethoxyethyl sulfonate (H2NCH2CH2NHCH2CH2OCH2CH2SO3Na). Next, hydrophilic groups of sodium ethylenediamino ethoxyethyl sulfonate are used to prepare an aqueous polyurethane to improve the flowability of the resin, in which the polyurethane prepolymer has an isocyanate group at its end. More than one acrylate monomer is used for dilution and reduction of viscosity, and hydrophilic and amine groups containing sulfonate is used for water dispersion and to carry out a chain extension reaction. After that, an initiator is added for acrylic polymerization, so as to modify polyurethane with graft acrylic.

Abstract: An ultraviolet C light-emitting diode includes an n-type semiconductor layer, a p-type semiconductor layer, an active layer, a first electron blocking layer, and a second electron blocking layer. The active layer is disposed between the n-type semiconductor layer and the p-type semiconductor layer. The wavelength of the maximum peak of the spectrum emitted by the active layer ranges from 230 nanometers to 280 nanometers. The concentration of magnesium in the active layer is less than 1017 atoms/cm3. The first electron blocking layer and the second electron blocking layer are disposed between the p-type semiconductor layer and the active layer. The concentration of magnesium in the second electron blocking layer is greater than that of the first electron blocking layer and is greater than 1018 atoms/cm3.

Abstract: A process for preparing solvent-free aqueous polyurethane dispersion modified with acrylic grafting is divided into four steps. The first step is a reaction of a diisocyanate with a polyol to prepare a prepolymer; the second step involves diluting the prepolymer with an acrylate monomer and adding a sulfonate-based chain extender to react; the third step involves adding deionized water and a water-soluble diamine-based chain extender to obtain a solvent-free sulfonate-based aqueous polyurethane dispersion; and the fourth step involves letting the aqueous polyurethane become modified with acrylic grafting. The resulting aqueous polyurethane has excellent mechanical strength, heat resistance and water resistance.

Abstract: The present invention is directed toward pharmaceutical compositions comprising an isolated polypeptide and a pharmaceutically acceptable carrier. The present invention also discloses an antibody or an antigen-binding portion thereof that bind to the isolated polypeptide. Methods of inhibiting cancer cells growth are also disclosed, comprising administering the isolated polypeptide or the antibody described herein to a subject in need thereof.

Abstract: A process for preparing aqueous polyurethane solvent-free uses an acrylate monomer instead of acetone to dilute a prepared polyurethane prepolymer, not only the monomer can be added without cooling, but also the prepolymer has good dispersal and is favorable to subsequent dispersion in water while preventing coagulation and acetone residual; additionally, the invented process let the aqueous polyurethane become modified by acrylic grafting may improve the aqueous polyurethane being excellent in terms of mechanical strength, heat resistance and water resistance.

Abstract: In an embodiment, a III-V nitride semiconductor device comprises an AlGaN epitaxial layer and a metal electrode. The AlGaN epitaxial layer is a C-plane n-type or undoped layer, and the AlGaN epitaxial layer has an epitaxial surface consisting of one or more semi-polar planes. The metal electrode is directly formed on the one or more semi-polar planes.

Abstract: A semiconductor light-emitting structure including a first-type doped semiconductor layer, a second-type doped semiconductor layer, a light-emitting layer, a first electrode, a second electrode, and a magnetic layer is provided. The light-emitting layer is disposed between the first-type doped semiconductor layer and the second-type doped semiconductor layer. The first electrode is electrically connected to the first-type doped semiconductor layer, and the second electrode is electrically connected to the second-type doped semiconductor layer. The magnetic layer connects the first electrode and the first-type doped semiconductor layer. At least a portion of the magnetic layer is magnetic, and the bandgap of at least another portion of the magnetic layer is greater than 0 eV and is less than or equal to 5 eV. The material of the magnetic layer includes metal, metal oxide, or a combination thereof.

Abstract: The present invention is directed toward pharmaceutical compositions comprising an isolated polypeptide and a pharmaceutically acceptable carrier. The present invention also discloses an antibody or an antigen-binding portion thereof that bind to the isolated polypeptide.

Abstract: The present invention is directed toward pharmaceutical compositions comprising an isolated polypeptide and a pharmaceutically acceptable carrier. The present invention also discloses an antibody or an antigen-binding portion thereof that bind to the isolated polypeptide. Methods of inhibiting cancer cells growth are also disclosed, comprising administering the isolated polypeptide or the antibody described herein to a subject in need thereof.