Abstract: A semiconductor device includes a source/drain feature over a semiconductor substrate, channel layers over the semiconductor substrate and connected to the source/drain feature, a gate portion between vertically adjacent channel layers, and an inner spacer between the source/drain feature and the gate portion and between adjacent channel layers. The semiconductor device further includes an air gap between the inner spacer and the source/drain feature.

Abstract: A carrier includes a body, at least one first positioning structure and at least one second positioning structure. The body has a first side wall, a second side wall and a plurality of inserting grooves, and the inserting grooves are arranged side by side and located between the first side wall and the second side wall. The first positioning structure is disposed at the first side wall, and the second positioning structure is disposed at the second side wall. A geometric profile of the first positioning structure along a direction perpendicular to the first side wall is conformal with a geometric profile of the second positioning structure along a direction perpendicular to the second side wall. A battery assembly is also provided.

Abstract: A carrier includes a body, at least one first positioning structure and at least one second positioning structure. The body has a first side wall, a second side wall and a plurality of inserting grooves, and the inserting grooves are arranged side by side and located between the first side wall and the second side wall. The first positioning structure is disposed at the first side wall, and the second positioning structure is disposed at the second side wall. A geometric profile of the first positioning structure along a direction perpendicular to the first side wall is conformal with a geometric profile of the second positioning structure along a direction perpendicular to the second side wall. A battery assembly is also provided.