Abstract: The present disclosure provides a matte-type electromagnetic interference shielding film including bio-based components, which includes a bio-based insulating layer, a bio-based adhesive layer, a metal layer, and a bio-based electrically conductive adhesive layer. The matte-type electromagnetic interference shielding film including the bio-based component of the present disclosure has a matte appearance and high bio-based content and has the advantages of good surface insulation, high surface hardness, good chemical resistance, high shielding performance, good adhesion strength, low transmission loss, high transmission quality, good operability, high heat resistance, and the inner electrically conductive adhesive layer with long shelf life and storage life. The present disclosure further provides a preparation method thereof.

Abstract: A method performed at least partially by a processor includes performing an air gap insertion process. The air gap insertion process includes sorting a plurality of nets of a layout of an integrated circuit in an order, and inserting, in accordance with the sorted order of the plurality of nets, air gap patterns adjacent to the plurality of nets. The method further includes generating a modified layout of the integrated circuit. The modified layout includes the plurality of nets and the inserted air gap patterns.

Abstract: A method, of generating a modified layout based on an original layout, includes: determining a first set of width bias values of an i-th set of layout patterns which compensate for subtractive process effects, the original layout having N sets of layout patterns corresponding to N masks; determining a second set of width bias values of the i-th set of layout patterns of the original layout which compensate for additive process effects; generating the modified layout based on the first and second sets of width bias values of the i-th set of layout patterns, the order index i of the i-th mask corresponding to an order of the i-th mask being applied during a fabrication process; and fabricating, based on the modified layout, at least one of a semiconductor mask or at least one component in a layer of an inchoate semiconductor integrated circuit.

Abstract: A method includes generating a plurality of multiple patterning decompositions associated with a layout of an integrated circuit. Each of the plurality of multiple patterning decompositions includes a first pattern associated with a first mask, a second pattern associated with a second mask, the first mask and the second mask being two masks of a multiple patterning mask set, a width value associated with at least one of the first pattern or the second pattern, and a first spacing value between the first pattern and the second pattern. A file is generated comprising a plurality of dielectric constant values associated with the plurality of multiple patterning decompositions that are based on the width values and the first spacing values.

Abstract: A method, of generating a modified layout based on an original layout, includes: determining a first set of width bias values of an i-th set of layout patterns which compensate for subtractive process effects, the original layout having N sets of layout patterns corresponding to N masks; determining a second set of width bias values of the i-th set of layout patterns of the original layout which compensate for additive process effects; generating the modified layout based on the first and second sets of width bias values of the i-th set of layout patterns, the order index i of the i-th mask corresponding to an order of the i-th mask being applied during a fabrication process; and fabricating, based on the modified layout, at least one of a semiconductor mask or at least one component in a layer of an inchoate semiconductor integrated circuit.

Abstract: A method of includes determining a first set of width bias values of an i-th set of layout patterns of an original layout according a first type width variation. The original layout has N sets of layout patterns corresponding to N masks, where the i-th set of layout patterns has an i-th mask assignment corresponding to an i-th mask of the N masks. The order index i is an integer from 1 to N, and N is an integer and greater than 1. A second set of width bias values of the i-th set of layout patterns of the original layout is determined according to a second type width variation. The modified layout is generated based on the first and second sets of width bias values of the i-th set of layout patterns.

Abstract: A method performed at least partially by a processor includes performing an air gap insertion process. The air gap insertion process includes sorting a plurality of nets of a layout of an integrated circuit in an order, and inserting, in accordance with the sorted order of the plurality of nets, air gap patterns adjacent to the plurality of nets. The method further includes generating a modified layout of the integrated circuit. The modified layout includes the plurality of nets and the inserted air gap patterns.

Abstract: A method includes generating a plurality of multiple patterning decompositions associated with a layout of an integrated circuit. Each of the plurality of multiple patterning decompositions includes a first pattern associated with a first mask, a second pattern associated with a second mask, the first mask and the second mask being two masks of a multiple patterning mask set, a width value associated with at least one of the first pattern or the second pattern, and a first spacing value between the first pattern and the second pattern. A file is generated comprising a plurality of dielectric constant values associated with the plurality of multiple patterning decompositions that are based on the width values and the first spacing values.

Abstract: A method of includes determining a first set of width bias values of an i-th set of layout patterns of an original layout according a first type width variation. The original layout has N sets of layout patterns corresponding to N masks, where the i-th set of layout patterns has an i-th mask assignment corresponding to an i-th mask of the N masks. The order index i is an integer from 1 to N, and N is an integer and greater than 1. A second set of width bias values of the i-th set of layout patterns of the original layout is determined according to a second type width variation. The modified layout is generated based on the first and second sets of width bias values of the i-th set of layout patterns.

Abstract: A method of generating a simulation model of a predefined fabrication process according to a sample conductive feature includes receiving a geometry configuration and layout design of the conductive feature. A circuit-level simulation model of the sample conductive feature based on the geometry configuration of the sample conductive feature is generated. A hardware processor converts the circuit-level simulation model of the sample conductive feature into at least a first layout bias rule corresponding to a first set of predetermined criteria of the layout design and a second layout bias rule, different from the first layout bias rule, corresponding to a second set of predetermined criteria of the layout design.

Abstract: A method comprises generating a plurality of multiple patterning decompositions associated with a layout of an integrated circuit. Each of the plurality of multiple patterning decompositions comprises a first pattern associated with a first mask, a second pattern associated with a second mask, the first mask and the second mask being two masks of a multiple patterning mask set, a width value associated with at least one of the first pattern or the second pattern, and a spacing value between the first pattern and the second pattern. A file is generated comprising a plurality of dielectric constant values associated with the plurality of multiple patterning decompositions that are based on the width values and the spacing values.

Abstract: A method comprises generating a plurality of multiple patterning decompositions associated with a layout of an integrated circuit. Each of the plurality of multiple patterning decompositions comprises a first pattern associated with a first mask, a second pattern associated with a second mask, the first mask and the second mask being two masks of a multiple patterning mask set, a width value associated with at least one of the first pattern or the second pattern, and a spacing value between the first pattern and the second pattern. A file is generated comprising a plurality of dielectric constant values associated with the plurality of multiple patterning decompositions that are based on the width values and the spacing values.

Abstract: A method of generating a simulation model of a predefined fabrication process according to a sample conductive feature includes receiving a geometry configuration and layout design of the conductive feature. A circuit-level simulation model of the sample conductive feature based on the geometry configuration of the sample conductive feature is generated. A hardware processor converts the circuit-level simulation model of the sample conductive feature into at least a first layout bias rule corresponding to a first set of predetermined criteria of the layout design and a second layout bias rule, different from the first layout bias rule, corresponding to a second set of predetermined criteria of the layout design.

Abstract: A portion of a layout of a single layer of an integrated circuit is to be multi-patterned. The patterns are divided into first and second groups, to be patterned on the single layer by a first mask or a second mask. For each portion of each pattern, a spacing relationship is determined between that portion and any adjacent pattern on either or both sides. A processor computes a first capacitance (C), resistance (R), or resistance-capacitance (RC) cost of assigning the first group to the first mask and the second group to the second mask, and a second cost of assigning the first group to the second mask and the second group to the first mask, based on the spacing relationships. The first group is assigned to the first mask and the second group to the second mask if the first cost is lower than the second cost.

Abstract: A portion of a layout of a single layer of an integrated circuit is to be multi-patterned. The patterns are divided into first and second groups, to be patterned on the single layer by a first mask or a second mask. For each portion of each pattern, a spacing relationship is determined between that portion and any adjacent pattern on either or both sides. A processor computes a first capacitance (C), resistance (R), or resistance-capacitance (RC) cost of assigning the first group to the first mask and the second group to the second mask, and a second cost of assigning the first group to the second mask and the second group to the first mask, based on the spacing relationships. The first group is assigned to the first mask and the second group to the second mask if the first cost is lower than the second cost.

Abstract: Among other things, one or more systems and techniques for width bias adjustment for a design layout are provided. During fabrication, characteristics of a component can change, such as size, width, position, etc., from how a design layout represents such components. Accordingly, a width bias table is used to identify a width bias value that can be applied between a first polygon and a second polygon to compensate for a characteristic change associated with at least one of the first polygon and the second polygon during fabrication. The width bias value is used during RC extraction to determine an electrical characteristic adjustment, such as an additional capacitance or resistance associated with the width bias value, for at least one of the first polygon and the second polygon. In this way, RC extraction, during a design phase, can take into account electrical characteristic changes that occur during fabrication.

Abstract: The present disclosure relates to a method of RC extraction that provides for a fast development time and easy maintenance. In some embodiments, the method provides a graphical representation of an integrated chip layout having a plurality of integrated chip components. A plurality of pattern based graphical features are then determined. Respective pattern based graphical features define a structural aspect of an integrated chip component. One of the plurality of integrated chip components is defined as a pattern oriented function having inputs of one or more of the pattern based graphical features. The pattern oriented function determines a shape of the one of the plurality of integrated chip components based upon a relation between the plurality of inputs. By determining a shape of an integrated chip component using a pattern oriented function, the complexity of RC profiles can be reduced.

Abstract: A method of generating a bias-adjusted layout design of a conductive feature includes receiving a layout design of the conductive feature. If a geometry configuration of the layout design is within a first set of predetermined criteria, the bias-adjusted layout design of the conductive feature is generated according to a first layout bias rule. If the geometry configuration of the layout design is within a second set of predetermined criteria, the bias-adjusted layout design of the conductive feature is generated according to a second layout bias rule.

Abstract: The present disclosure relates to a method of RC extraction that provides for a fast development time and easy maintenance. In some embodiments, the method provides a graphical representation of an integrated chip layout having a plurality of integrated chip components. A plurality of pattern based graphical features are then determined. Respective pattern based graphical features define a structural aspect of an integrated chip component. One of the plurality of integrated chip components is defined as a pattern oriented function having inputs of one or more of the pattern based graphical features. The pattern oriented function determines a shape of the one of the plurality of integrated chip components based upon a relation between the plurality of inputs. By determining a shape of an integrated chip component using a pattern oriented function, the complexity of RC profiles can be reduced.

Abstract: A method includes generating a three-dimensional table. The table cells of the three-dimensional table comprise normalized parasitic capacitance values selected from the group consisting essentially of normalized poly-to-fin parasitic capacitance values and normalized poly-to-metal-contact parasitic capacitance values of Fin Field-Effect Transistors (FinFETs). The three-dimensional table is indexed by poly-to-metal-contact spacings of the FinFETs, fin-to-fin spacings of the FinFETs, and metal-contact-to-second-poly spacings of the FinFETs. The step of generating the three-dimensional table is performed using a computer.