Abstract: The present invention relates to an organic light-emitting device which provides an electroluminescence (EL) or photoluminescence (PL) device with high external quantum efficiency. The present invention forms a composite film layer with continuously changing refraction indices between an ITO transparent electrode and a substrate made of plastic or glass. The refraction index of the composite film layer is the same as the ITO electrode at the interface with the ITO electrode. It decreases along the direction perpendicular to the substrate in a linear or nonlinear way. The refraction index is the same as that of the plastic or glass at the interface with the substrate. This way can avoid reflection due to the difference in the refraction index across the interface. The excited light originally trapped in the ITO electrode can be guided outwards.

Abstract: A flexible organic electro-luminescent device is provided, in which a titanium dioxide-silicon dioxide composite layer is formed on the upper and lower surfaces of a transparent plastic substrate. A transparent conductive electrode and an organic luminescent layer are formed in sequence on one of surfaces of the composite layer. The organic luminescent layer is either small molecule luminescent material or polymer luminescent material. Then, a metal electrode is formed on the organic luminescent layer, and a silicon dioxide protecting layer is formed on the metal electrode to enclose the metal electrode and the organic luminescent layer completely. The titanium dioxide-silicon dioxide composite layer and silicon dioxide protecting layer are formed by ion-assisted electron gun evaporation in the temperature lower than 100° C., which does not result in the thermal loading to the small molecule and polymer organic electro-luminescent device.

Abstract: An organic electroluminescence (OEL) matrix-type single-pixel driver, which comprises: an OEL device, a first transistor, and a second transistor. The first transistor and the second transistor form a complementary structure so that when the data line uses the first transistor to drive an organic light-emitting diode (OLED) device, the second transistor is in the OFF state, causing no power consumption. When the data line is in the LOW state, the first transistor is in the OFF state. The second transistor is in a sub-threshold state after getting rid of extra charges.

Abstract: An organic electroluminescence (OEL) matrix-type single-pixel driver, which comprises: an OEL device, a first transistor, and a second transistor. The first transistor and the second transistor form a complementary structure so that when the data line uses the first transistor to drive an organic light-emitting diode (OLED) device, the second transistor is in the OFF state, causing no power consumption. When the data line is in the LOW state, the first transistor is in the OFF state. The second transistor is in a sub- threshold state after getting rid of extra charges.

Abstract: The present invention relates to an organic light-emitting device which provides an electroluminescence (EL) or photoluminescence (PL) device with high external quantum efficiency. The present invention forms a composite film layer with continuously changing refraction indices between an ITO transparent electrode and a substrate made of plastic or glass. The refraction index of the composite film layer is the same as the ITO electrode at the interface with the ITO electrode. It decreases along the direction perpendicular to the substrate in a linear or nonlinear way. The refraction index is the same as that of the plastic or glass at the interface with the substrate. This way can avoid reflection due to the difference in the refraction index across the interface. The excited light originally trapped in the ITO electrode can be guided outwards.

Abstract: A Polarization-independent ultra-narrow band pass filter, which is not sensitive to the polarization state of incident beams of light and can obtain better narrow band pass signals with fewer film layers. The polarization-independent ultra-narrow band pass filter is a stack structure of dual symmetric resonance cavities. Each of the resonance cavities is a structure of high refraction index film layers and low refraction index layers stacked interposedly together. Each of the resonance cavities includes two reflectors and a resonance light grating sandwiched in between. Each film layer of the reflector and the resonance grating is &lgr;/4 thick. The grating periodic length is between 0.9 &lgr; and 3 &lgr; and a preferred grating periodic length is 1 &lgr; to 2 &lgr;, where &lgr; is the wavelength of the incident light. The high refraction index layer of the reflector is a Si layer (refraction index nH-=3.6) and the low refraction index layer is a SiO2 layer (refraction index nL=1.43).