Abstract: A manufacturing method of a package-on-package structure includes at least the following steps. Top packages are mounted on a top side of a reconstructed wafer over a flexible tape, where conductive bumps at a bottom side of the reconstructed wafer is attached to the flexible tape, and during the mounting, a shape geometry of the respective conductive bump changes and at least a lower portion of the respective conductive bump is embraced by the flexible tape. The flexible tape is released from the conductive bumps after the mounting.

Abstract: A semiconductor structure includes a die embedded in a molding material, the die having die connectors on a first side; a first redistribution structure at the first side of the die, the first redistribution structure being electrically coupled to the die through the die connectors; a second redistribution structure at a second side of the die opposing the first side; and a thermally conductive material in the second redistribution structure, the die being interposed between the thermally conductive material and the first redistribution structure, the thermally conductive material extending through the second redistribution structure, and the thermally conductive material being electrically isolated.

Abstract: A sense amplifier circuit includes a sense amplifier, a switch and a temperature compensation circuit. The temperature compensation circuit provides a control signal having a positive temperature coefficient, based on which the switch provides reference impedance for temperature compensation. The sense amplifier includes a first input end coupled to a target bit and a second input end coupled to the switch. The sense amplifier outputs a sense amplifier signal based on the reference impedance and the impedance of the target bit.

Abstract: A semiconductor device and method of manufacturing the same are provided. The semiconductor device includes a substrate and a first gate electrode disposed on the substrate and located in a first region of the semiconductor device. The semiconductor device also includes a first sidewall structure covering the first gate electrode. The semiconductor device further includes a protective layer disposed between the first gate electrode and the first sidewall structure. In addition, the semiconductor device includes a second gate electrode disposed on the substrate and located in a second region of the semiconductor device. The semiconductor device also includes a second sidewall structure covering a lateral surface of the second gate electrode.

Abstract: A high-throughput automated preprocessing method and a system are applied to a nucleic acid preprocessing apparatus including a control system, a sample transfer area, a nucleic acid extraction area, and a reagent setup area. The control system includes a user interface and guides a user to set up on the user interface. In the sample transfer area, the method includes steps of: a user selecting a sampling tube type, a test protocol and an extraction protocol on the user interface, and the control system performing a sample transfer task. In the nucleic acid extraction area, the method includes steps of: the control system performing a nucleic acid extraction task based on the selected extraction protocol. In the reagent setup area, the method includes steps of: the control system performing a reagent deployment task based on the selected test protocol, and the control system performing a nucleic acid transfer task.

Abstract: A pixel array is provided. The pixel array includes a plurality of pixels, wherein each of the pixels includes a light emitting diode, a first transistor, a second transistor, a third transistor, a fourth transistor, and a fifth transistor. The first transistor receives a first data signal and a first scan signal. The second transistor is coupled to the first transistor and an anode of the light emitting diode. The third transistor receives a system high voltage and a first control signal, and is coupled to the second transistor. The fourth transistor is coupled to an anode of a light emitting diode of an adjacent pixel, a control terminal of the third transistor, and a cathode of the light emitting diode. The fifth transistor is coupled to the cathode of the light emitting diode, and receives a second control signal and a system low voltage.

Abstract: A pixel array is provided. The pixel array includes a plurality of red pixels, a plurality of green pixels, and a plurality of blue pixels. Each green pixel includes a light emitting diode (LED), a first transistor, a second transistor, a third transistor, and a fourth transistor. The LED receives a system low voltage. The first transistor receives a first data signal and a first scan signal. The second transistor is coupled to a second end of the first transistor and the anode of the light emitting diode. The third transistor receives a system high voltage and a first control signal, and is coupled to a first end of the second transistor. The fourth transistor is coupled to the anode of the light-emitting diode of an adjacent green pixel, a control terminal of the third transistor, and the anode of the light-emitting diode.

Abstract: The present disclosure provides a semiconductor device, including a buffer layer, a first sub-chip and a second sub-chip, and a connecting element. The first sub-chip and the second sub-chip are separately arranged on the buffer layer. Each of the first sub-chip and the second sub-chip includes a first diffusion layer, an active layer, and a second diffusion layer. The first diffusion layer, the active layer, and the second diffusion layer are sequentially arranged on the buffer layer in a top-down approach. The first diffusion layer and the buffer layer are first-type epitaxial layers, and the second diffusion layer is a second-type epitaxial layer. The connecting element is configured to couple the second diffusion layer of the first sub-chip and the first diffusion layer of the second sub-chip.

Abstract: A pixel array is provided. The pixel array includes a plurality of pixels, wherein each of the pixels includes a light emitting diode, a first transistor, a second transistor, a third transistor, a fourth transistor, and a fifth transistor. The first transistor receives a first data signal and a first scan signal. The second transistor is coupled to the first transistor and an anode of the light emitting diode. The third transistor receives a system high voltage and a first control signal, and is coupled to the second transistor. The fourth transistor is coupled to an anode of a light emitting diode of an adjacent pixel, a control terminal of the third transistor, and a cathode of the light emitting diode. The fifth transistor is coupled to the cathode of the light emitting diode, and receives a second control signal and a system low voltage.

Abstract: A pixel array is provided. The pixel array includes a plurality of red pixels, a plurality of green pixels, and a plurality of blue pixels. Each green pixel includes a light emitting diode (LED), a first transistor, a second transistor, a third transistor, and a fourth transistor. The LED receives a system low voltage. The first transistor receives a first data signal and a first scan signal. The second transistor is coupled to a second end of the first transistor and the anode of the light emitting diode. The third transistor receives a system high voltage and a first control signal, and is coupled to a first end of the second transistor. The fourth transistor is coupled to the anode of the light-emitting diode of an adjacent green pixel, a control terminal of the third transistor, and the anode of the light-emitting diode.

Abstract: The present disclosure provides a light emitting diode component, including a body and a plurality of P-N diode structures. The P-N diode structures are coupled in series and integrated on the body. The P-N diode structures include a plurality of p-type doping layers and a plurality of n-type doping layers. The p-type doping layer of a first P-N diode structure in the P-N diode structures is electrically coupled to the n-type doping layer of a second P-N diode structure in the P-N diode structures.

Abstract: A light-emitting diode display device and a light-emission control method thereof are provided. The light-emitting diode display device includes a timing controller, multiple display pixels, and a scanning circuit. The display pixels form multiple display rows. The scanning circuit generates multiple scan signals and multiple light-emission signals that respectively drive the display rows. During a first data-writing time period of a first frame period, the timing controller provides multiple writing data to be respectively written into the display rows. During a light-emitting time period, the scanning circuit drives each of the light-emission signals to generate multiple pulses periodically according to a set period to drive the corresponding display rows. The light-emitting time period is after the first data-writing time period and before a second data-writing time period of a second frame period ends.

Abstract: A light-emitting diode display device and a light-emission control method thereof are provided. The light-emitting diode display device includes a timing controller, multiple display pixels, and a scanning circuit. The display pixels form multiple display rows. The scanning circuit generates multiple scan signals and multiple light-emission signals that respectively drive the display rows. During a first data-writing time period of a first frame period, the timing controller provides multiple writing data to be respectively written into the display rows. During a light-emitting time period, the scanning circuit drives each of the light-emission signals to generate multiple pulses periodically according to a set period to drive the corresponding display rows. The light-emitting time period is after the first data-writing time period and before a second data-writing time period of a second frame period ends.

Abstract: A display panel including data lines, scan lines, pixel structures, power lines and a fixing layer is provided. The pixel structure includes a first transistor, a second transistor and a light emitting diode device. The first transistor is electrically coupled to a corresponding scan line, a corresponding data line and the second transistor. A first end of the light emitting diode device is electrically coupled to the second transistor. The power lines are electrically coupled to the second transistor of at least one of the pixel structures and a second end of the light emitting diode device of at least one of the pixel structures. The fixing layer is disposed on at least one of the power lines. The light emitting diode device of at least one of the pixel structures is disposed on the fixing layer and overlapped with the at least one of the power lines.

Abstract: A pixel structure includes a data line, a first scan line, first and second transistors, first and second power lines, LED elements, a connection pattern, a first insulation layer, and a first conductive pattern. Each of the first transistor and the second transistor has a first end, a control end, and second end. Each LED element has a first electrode and a second electrode. The second power line is electrically coupled to the first electrodes. The connection pattern is electrically coupled between the second end of the first transistor and the control end of the second transistor. The first conductive pattern is disposed above the first insulation layer and electrically coupled between the second electrodes, the second electrodes are electrically coupled to the second end of the second transistor through the first conductive pattern, and the connection pattern and the first conductive pattern are overlapped in an orthogonal projection direction.

Abstract: A pixel structure includes a data line, a first scan line, first and second transistors, first and second power lines, LED elements, a connection pattern, a first insulation layer, and a first conductive pattern. Each of the first transistor and the second transistor has a first end, a control end, and second end. Each LED element has a first electrode and a second electrode. The second power line is electrically coupled to the first electrodes. The connection pattern is electrically coupled between the second end of the first transistor and the control end of the second transistor. The first conductive pattern is disposed above the first insulation layer and electrically coupled between the second electrodes, the second electrodes are electrically coupled to the second end of the second transistor through the first conductive pattern, and the connection pattern and the first conductive pattern are overlapped in an orthogonal projection direction.

Abstract: A display panel including data lines, scan lines, pixel structures, power lines and a fixing layer is provided. The pixel structure includes a first transistor, a second transistor and a light emitting diode device. The first transistor is electrically coupled to a corresponding scan line, a corresponding data line and the second transistor. A first end of the light emitting diode device is electrically coupled to the second transistor. The power lines are electrically coupled to the second transistor of at least one of the pixel structures and a second end of the light emitting diode device of at least one of the pixel structures. The fixing layer is disposed on at least one of the power lines. The light emitting diode device of at least one of the pixel structures is disposed on the fixing layer and overlapped with the at least one of the power lines.

Abstract: A pixel includes a voltage dividing unit, a LC capacitor, a control unit, a first capacitor, a writing-in unit, and an adjusting unit. First terminal of the voltage dividing unit receives a first power voltage. The control terminal of the voltage dividing unit receives a first control signal. The LC capacitor is electrically coupled to the second terminal of voltage dividing unit. The control terminal of the control unit receives a second control signal. The writing-in unit provides a first pixel data signal to the first capacitor based on a third control signal. The adjusting unit receives a second power voltage. The adjusting unit divides voltage difference between the first and second power voltages based on the first pixel data signal stored in the first capacitor so as to control voltage stored in the LC capacitor, such that the LC corresponding to LC capacitor can be controlled.

Abstract: A pixel includes a voltage dividing unit, a LC capacitor, a control unit, a first capacitor, a writing-in unit, and an adjusting unit. First terminal of the voltage dividing unit receives a first power voltage. The control terminal of the voltage dividing unit receives a first control signal. The LC capacitor is electrically coupled to the second terminal of voltage dividing unit. The control terminal of the control unit receives a second control signal. The writing-in unit provides a first pixel data signal to the first capacitor based on a third control signal. The adjusting unit receives a second power voltage. The adjusting unit divides voltage difference between the first and second power voltages based on the first pixel data signal stored in the first capacitor so as to control voltage stored in the LC capacitor, such that the LC corresponding to LC capacitor can be controlled.

Abstract: A pixel includes a voltage dividing unit, a LC capacitor, a control unit, a first capacitor, a writing-in unit, and an adjusting unit. First terminal of the voltage dividing unit receives a first power voltage. The control terminal of the voltage dividing unit receives a first control signal. The LC capacitor is electrically coupled to the second terminal of voltage dividing unit. The control terminal of the control unit receives a second control signal. The writing-in unit provides a first pixel data signal to the first capacitor based on a third control signal. The adjusting unit receives a second power voltage. The adjusting unit divides voltage difference between the first and second power voltages based on the first pixel data signal stored in the first capacitor so as to control voltage stored in the LC capacitor, such that the LC corresponding to LC capacitor can be controlled.