Abstract: A semiconductor device including a substrate, a low-k dielectric layer, a cap layer, and a conductive layer is provided. The low-k dielectric layer is disposed over the substrate. The cap layer is disposed on the low-k dielectric layer, wherein a carbon atom content of the cap layer is greater than a carbon atom content of the low-k dielectric layer. The conductive layer is disposed in the cap layer and the low-k dielectric layer.

Abstract: A mask including a transparent substrate, a non-transmitting layer, a first transmitting layer and a second transmitting layer is provided. The transparent substrate has a first region, a second region, and a third region. The non-transmitting layer is disposed in the first region of the transparent substrate. The first transmitting layer is disposed in the second region and the third region of the transparent substrate. The second transmitting layer is disposed on the first transmitting layer in the third region.

Abstract: A mask and a manufacturing method thereof are provided. A transparent substrate having three regions is provided first. A non-transmitting layer is formed in a first region of the transparent substrate. Then, a first photoresist layer is formed on the transparent substrate, and the first photoresist layer exposes a second region of the transparent substrate. Next, a first transmitting layer is formed on the transparent substrate and the first photoresist layer. Finally, the first photoresist layer is removed. The first transmitting layer on the first photoresist layer is removed at the same time and the first transmitting layer in the second region of the transparent substrate is remained and a third region of the transparent substrate is exposed. A lift-off process is used in the mask manufacturing method of the present invention to form the transmitting layer.

Abstract: A mask including a transparent substrate, a non-transmitting layer, a first transmitting layer and a second transmitting layer is provided. The transparent substrate has a first region, a second region, and a third region. The non-transmitting layer is disposed in the first region of the transparent substrate. The first transmitting layer is disposed in the second region and the third region of the transparent substrate. The second transmitting layer is disposed on the first transmitting layer in the third region.

Abstract: Scan lines are formed on a substrate. A patterned dielectric layer and a patterned semiconductor layer are formed to cover portions of the scan lines. A patterned transparent conductive layer and a patterned metal layer are sequentially formed to define data lines, source/drain electrodes, pixel electrodes and etching protecting layers. The etching protective layers cover the exposed scan lines exposed by the patterned dielectric layer and the patterned semiconductor layer, and are electrically connected to the scan lines. A passivation layer is formed, and then the passivation layer over the pixel electrodes and the patterned metal layer of the pixel electrodes are removed to expose the patterned transparent conductive layer. The patterned semiconductor layer over the scan lines between the etching protective layers and the data lines is removed to expose the patterned dielectric layer over the scan lines.

Abstract: Scan lines are formed on a substrate. A patterned dielectric layer and a patterned semiconductor layer are formed to cover portions of the scan lines. A patterned transparent conductive layer and a patterned metal layer are sequentially formed to define data lines, source/drain electrodes, pixel electrodes and etching protecting layers. The etching protective layers cover the exposed scan lines exposed by the patterned dielectric layer and the patterned semiconductor layer, and are electrically connected to the scan lines. A passivation layer is formed, and then the passivation layer over the pixel electrodes and the patterned metal layer of the pixel electrodes are removed to expose the patterned transparent conductive layer. The patterned semiconductor layer over the scan lines between the etching protective layers and the data lines is removed to expose the patterned dielectric layer over the scan lines.

Abstract: A mask and a manufacturing method thereof are provided. A transparent substrate having three regions is provided first. A non-transmitting layer is formed in a first region of the transparent substrate. Then, a first photoresist layer is formed on the transparent substrate, and the first photoresist layer exposes a second region of the transparent substrate. Next, a first transmitting layer is formed on the transparent substrate and the first photoresist layer. Finally, the first photoresist layer is removed. The first transmitting layer on the first photoresist layer is removed at the same time and the first transmitting layer in the second region of the transparent substrate is remained and a third region of the transparent substrate is exposed. A lift-off process is used in the mask manufacturing method of the present invention to form the transmitting layer.