Abstract: A semiconductor structure and method of forming the same are provided. The method includes: forming a plurality of mandrel patterns over a dielectric layer; forming a first spacer and a second spacer on sidewalls of the plurality of mandrel patterns, wherein a first width of the first spacer is larger than a second width of the second spacer; removing the plurality of mandrel patterns; patterning the dielectric layer using the first spacer and the second spacer as a patterning mask; and forming conductive lines laterally aside the dielectric layer.

Abstract: A resin composition and a filter element are provided. The resin composition includes a black coloring agent (A), an ethylenically-unsaturated monomer (B), a solvent (C), a resin (D), and a photoinitiator (E). The black coloring agent (A) includes a titanium black (A-1) and a carbon black (A-2). Based on a total usage amount of 100 parts by weight of the titanium black (A-1) and the carbon black (A-2), a usage amount of the titanium black (A-1) is 50 parts by weight to 75 parts by weight.

Abstract: A semiconductor device includes a substrate, two source/drain features over the substrate, channel layers connecting the two source/drain features, and a gate structure wrapping around each of the channel layers. Each of the two source/drain features include a first epitaxial layer, a second epitaxial layer over the first epitaxial layer, and a third epitaxial layer on inner surfaces of the second epitaxial layer. The channel layers directly interface with the second epitaxial layers and are separated from the third epitaxial layers by the second epitaxial layers. The first epitaxial layers include a first semiconductor material with a first dopant. The second epitaxial layers include the first semiconductor material with a second dopant. The second dopant has a higher mobility than the first dopant.

Abstract: Methods of cutting fins, and structures formed thereby, are described. In an embodiment, a structure includes a first fin on a substrate, a second fin on the substrate, and a fin cut-fill structure disposed between the first fin and the second fin. The first fin and the second fin are longitudinally aligned. The fin cut-fill structure includes an insulating liner and a fill material on the insulating liner. The insulating liner abuts a first sidewall of the first fin and a second sidewall of the second fin. The insulating liner includes a material with a band gap greater than 5 eV.

Abstract: The present disclosure provides a gas sensor. The gas sensor includes a substrate, a conductor layer over the substrate, wherein the conductor layer includes a conductive pattern including a plurality of openings, the openings being arranged in a repeating pattern, an insulating layer in the plurality of openings and over a top surface of the conductive pattern, wherein the conductive pattern is embedded in the insulating layer, and a gas sensing film over a portion of the insulating layer.

Abstract: A semiconductor device and method of manufacture are provided. After a patterning of a middle layer, the middle layer is removed. In order to reduce or prevent damage to other underlying layers exposed by the patterning of the middle layer and intervening layers, an inhibitor is included within an etching process in order to inhibit the amount of material removed from the underlying layers.

Abstract: Video processing methods and apparatuses in a video encoding or decoding system for processing out-of-bounds nodes in a current picture. An out-of-bounds node is a coding tree node with a block region across a current picture boundary. The video processing method or apparatus determines an inferred splitting type, applies the inferred splitting type to split the out-of-bounds node into child blocks, adaptively splits each child block into one or multiple leaf blocks, and encodes or decodes the leaf blocks in the out-of-bounds node inside the current picture. The inferred splitting type for partitioning out-of-bounds nodes in an inter slice, picture, or tile is the same as the inferred splitting type for partitioning out-of-bounds nodes in an intra slice, picture, or tile.

Abstract: An optical element driving mechanism is provided. The optical element driving mechanism includes a movable portion, a fixed portion, and a driving assembly. The movable portion is used to connect the optical element. The movable portion may move relative to the fixed portion. The driving assembly is used to drive the movable portion to move relative to the fixed portion.

Abstract: An optical element driving mechanism is provided. The optical element driving mechanism includes a movable portion, a fixed portion, and a driving assembly. The movable portion is used to connect the optical element. The movable portion may move relative to the fixed portion. The driving assembly is used to drive the movable portion to move relative to the fixed portion.

Abstract: An optical element driving mechanism is provided. The optical element driving mechanism includes a movable portion, a fixed portion, and a driving assembly. The movable portion is used to connect the optical element. The movable portion may move relative to the fixed portion. The driving assembly is used to drive the movable portion to move relative to the fixed portion.

Abstract: An optical element driving mechanism is provided. The optical element driving mechanism includes a movable portion, a fixed portion, and a driving assembly. The movable portion is used to connect the optical element. The movable portion may move relative to the fixed portion. The driving assembly is used to drive the movable portion to move relative to the fixed portion.

Abstract: A channel hiatus correction method for an HDMI device is provided. A recovery code from scrambled data of the stream is obtained. A liner feedback shift register (LFSR) value of channels of the HDMI port is obtained based on the recovery code and the scrambled data of the stream. The stream is de-scrambled according to the LFSR value of the channels of the HDMI port. Video data is displayed according to the de-scrambled stream.

Abstract: An optical element driving mechanism is provided. The optical element driving mechanism includes a movable portion, a fixed portion, and a driving assembly. The movable portion is used to connect the optical element. The movable portion may move relative to the fixed portion. The driving assembly is used to drive the movable portion to move relative to the fixed portion.

Abstract: Provided is a pharmaceutical composition including gastrodin and a use thereof for the prevention or the treatment of amyotrophic lateral sclerosis. The pharmaceutical composition is effective in reducing neuronal axon degeneration and neurofibromin accumulation, improving symptoms of amyotrophic lateral sclerosis and extending life of patients of amyotrophic lateral sclerosis.

Abstract: The disclosure provides a semiconductor structure and a method of forming the same. The semiconductor structure includes a base pattern including a channel region and a drain region, a first semiconductor layer on the channel region of the base pattern, and a gate structure on the first semiconductor layer. The gate structure includes a first stack disposed on the first semiconductor layer and a second stack disposed on the first stack. The first stack includes a first sidewall adjacent to the drain region and a second sidewall opposite to the first sidewall in a first direction parallel to a top surface of the base pattern. The first sidewall is at a first distance from the second stack in the first direction, and the second sidewall is at a second distance from the second stack in the first direction. The first distance is greater than the second distance.

Abstract: A channel hiatus correction method for an HDMI device is provided. A recovery code from scrambled data of the stream is obtained. A liner feedback shift register (LFSR) value of channels of the HDMI port is obtained based on the recovery code and the scrambled data of the stream. The stream is de-scrambled according to the LFSR value of the channels of the HDMI port. Video data is displayed according to the de-scrambled stream.

Abstract: A semiconductor structure is provided. The semiconductor structure includes a substrate, a channel layer, a barrier layer, a compound semiconductor layer, a gate electrode, and a stack of dielectric layers. The channel layer is disposed on the substrate. The barrier layer is disposed on the channel layer. The compound semiconductor layer is disposed on the barrier layer. The gate electrode is disposed on the compound semiconductor layer. The stack of dielectric layers is disposed on the gate electrode. The stack of dielectric layers includes layers having different etching rates.

Abstract: A battery module includes an insulating base, a pair of electrodes and multiple battery packs. Each electrode is installed to the insulating base and has a bridge portion and a wire connecting part exposed from the insulating base, and a pair of lugs is extended smoothly from each battery pack, and an end of at least a part of the lugs is attached to each bridge portion correspondingly. Therefore, the lug is not being twisted or deformed easily, and the battery module may have good conductive efficiency, long service life, and convenience of changing the battery pack.

Abstract: A memory structure including a substrate, a first doped region, a second doped region, a first gate, a second gate, a first charge storage structure, and a second charge storage structure is provided. The first gate is located on the first doped region. The second gate is located on the second doped region. The first charge storage structure is located between the first gate and the first doped region. The first charge storage structure includes a first tunneling dielectric layer, a first dielectric layer, and a first charge storage layer. The second charge storage structure is located between the second gate and the second doped region. The second charge storage structure includes a second tunneling dielectric layer, a second dielectric layer, and a second charge storage layer. The thickness of the second tunneling dielectric layer is greater than the thickness of the first tunneling dielectric layer.

Abstract: The present invention relates to a method for synthesizing sinapoyl malate comprising the steps of (a) (i) reacting syringaldehyde with acetic acid anhydride and an alkali metal acetate; or (ii) reacting sinapinic acid with acetic acid anhydride, and (b) cleaving the anhydride of the acetyl protected reaction product of (a) by exposing to water and an aliphatic alcohol to form protected sinapinic acid, (c) esterifyinig the protected sinapinic acid by reacting with an alkyl protected carboxylic acid ester to form protected sinapoyl malate, and (d) reacting the protected sinapoyl malate with aqueous acid to yield sinapoyl malate.