Abstract: A semiconductor device includes a substrate, two source/drain features over the substrate, channel layers connecting the two source/drain features, and a gate structure wrapping around each of the channel layers. Each of the two source/drain features include a first epitaxial layer, a second epitaxial layer over the first epitaxial layer, and a third epitaxial layer on inner surfaces of the second epitaxial layer. The channel layers directly interface with the second epitaxial layers and are separated from the third epitaxial layers by the second epitaxial layers. The first epitaxial layers include a first semiconductor material with a first dopant. The second epitaxial layers include the first semiconductor material with a second dopant. The second dopant has a higher mobility than the first dopant.

Abstract: Methods of cutting fins, and structures formed thereby, are described. In an embodiment, a structure includes a first fin on a substrate, a second fin on the substrate, and a fin cut-fill structure disposed between the first fin and the second fin. The first fin and the second fin are longitudinally aligned. The fin cut-fill structure includes an insulating liner and a fill material on the insulating liner. The insulating liner abuts a first sidewall of the first fin and a second sidewall of the second fin. The insulating liner includes a material with a band gap greater than 5 eV.

Abstract: A channel hiatus correction method for an HDMI device is provided. A recovery code from scrambled data of the stream is obtained. A liner feedback shift register (LFSR) value of channels of the HDMI port is obtained based on the recovery code and the scrambled data of the stream. The stream is de-scrambled according to the LFSR value of the channels of the HDMI port. Video data is displayed according to the de-scrambled stream.

Abstract: Various embodiments of the present disclosure are directed towards an integrated chip. The integrated chip includes an interconnect structure overlying a semiconductor substrate and comprising a conductive wire. A passivation structure overlies the interconnect structure. An upper conductive structure overlies the passivation structure and comprises a first conductive layer, a dielectric layer, and a second conductive layer. The first conductive layer is disposed between the dielectric layer and the passivation structure. The second conductive layer extends along a top surface of the dielectric layer and penetrates through the first conductive layer and the passivation structure to the conductive wire.

Abstract: Provided is a pharmaceutical composition including gastrodin and a use thereof for the prevention or the treatment of amyotrophic lateral sclerosis. The pharmaceutical composition is effective in reducing neuronal axon degeneration and neurofibromin accumulation, improving symptoms of amyotrophic lateral sclerosis and extending life of patients of amyotrophic lateral sclerosis.

Abstract: Some embodiments of the present disclosure relate to a processing tool. The tool includes a housing enclosing a processing chamber, and an input/output port configured to pass a wafer through the housing into and out of the processing chamber. A back-side macro-inspection system is arranged within the processing chamber and is configured to image a back side of the wafer. A front-side macro-inspection system is arranged within the processing chamber and is configured to image a front side of the wafer according to a first image resolution. A front-side micro-inspection system is arranged within the processing chamber and is configured to image the front side of the wafer according to a second image resolution which is higher than the first image resolution.

Abstract: A channel hiatus correction method for an HDMI device is provided. A recovery code from scrambled data of the stream is obtained. A liner feedback shift register (LFSR) value of channels of the HDMI port is obtained based on the recovery code and the scrambled data of the stream. The stream is de-scrambled according to the LFSR value of the channels of the HDMI port. Video data is displayed according to the de-scrambled stream.

Abstract: Provided are structures and methods for forming structures with sloping surfaces of a desired profile. An exemplary method includes performing a first etch process to differentially etch a gate material to a recessed surface, wherein the recessed surface includes a first horn at a first edge, a second horn at a second edge, and a valley located between the first horn and the second horn; depositing an etch-retarding layer over the recessed surface, wherein the etch-retarding layer has a central region over the valley and has edge regions over the horns, and wherein the central region of the etch-retarding layer is thicker than the edge regions of the etch-retarding layer; and performing a second etch process to recess the horns to establish the gate material with a desired profile.

Abstract: A semiconductor structure is provided. The semiconductor structure includes a substrate, a channel layer, a barrier layer, a compound semiconductor layer, a gate electrode, and a stack of dielectric layers. The channel layer is disposed on the substrate. The barrier layer is disposed on the channel layer. The compound semiconductor layer is disposed on the barrier layer. The gate electrode is disposed on the compound semiconductor layer. The stack of dielectric layers is disposed on the gate electrode. The stack of dielectric layers includes layers having different etching rates.

Abstract: A micro LED and a manufacturing method thereof are provided. The micro LED includes a first semiconductor layer, an active layer, and a second semiconductor layer that are successively stacked together. The first semiconductor layer and the second semiconductor layer are of different types. The active layer includes a first quantum well layer and a second quantum well layer stacked together. The second quantum well layer and the second semiconductor layer form a nanoring. The first quantum well layer is configured to emit light of a first color. The second quantum well layer forming a sidewall of the nanoring is configured to emit light of a second color different from the first color. The first semiconductor layer is electrically coupled to a first electrode, and the second semiconductor layer is electrically coupled to a second electrode. A manufacturing method for a micro LED is provided.

Abstract: An example computing device includes a first housing portion, a second housing portion moveably connected to the first housing portion, a link to selectively secure the second housing portion to the first housing portion to inhibit movement of the second housing portion relative to the first housing portion, and a shape-memory alloy element to release the link to allow the second housing portion to move relative to the first housing portion.

Abstract: An optical system affixed to an electronic apparatus is provided, including a first optical module, a second optical module, and a third optical module. The first optical module is configured to adjust the moving direction of a first light from a first moving direction to a second moving direction, wherein the first moving direction is not parallel to the second moving direction. The second optical module is configured to receive the first light moving in the second moving direction. The first light reaches the third optical module via the first optical module and the second optical module in sequence. The third optical module includes a first photoelectric converter configured to transform the first light into a first image signal.

Abstract: A semiconductor device is disclosed. The semiconductor device includes a semiconductor fin. The semiconductor device includes first spacers over the semiconductor fin. The semiconductor device includes a metal gate structure, over the semiconductor fin, that is sandwiched at least by the first spacers. The semiconductor device includes a gate electrode contacting the metal gate structure. An interface between the metal gate structure and the gate electrode has its side portions extending toward the semiconductor fin with a first distance and a central portion extending toward the semiconductor fin with a second distance, the first distance being substantially less than the second distance.

Abstract: Present disclosure provides a semiconductor structure, including a semiconductor fin having a first portion and a second portion over the first portion, a first conductive region abutting a first lateral surface of the first portion and a first lateral surface of the second portion, a metal gate having a bottom portion and an upper portion, the bottom portion being between the first portion and the second portion of the semiconductor fin, and the upper portion being over the second portion of the semiconductor fin, and a first spacer between the bottom portion of the metal gate and the first conductive region. A method for manufacturing the semiconductor structure described herein is also provided.

Abstract: A method includes forming a reconstructed wafer, which includes placing a plurality of package components over a carrier, forming an interconnect structure over and electrically interconnecting the plurality of package components, forming top electrical connectors over and electrically connecting to the interconnect structure, and forming alignment marks at a same level as the top electrical connectors. Probe pads in the top electrical connectors are probed, and the probing is performed using the alignment marks for aligning to the probe pads. An additional package component is bonded to the reconstructed wafer through solder regions. The solder regions are physically joined to the top electrical connectors.

Abstract: A hinge is provided. The hinge includes a first connection element, a second connection element, a first elastic element, and a second elastic element. The second connection element is connected to the first connection element. The first elastic element is connected to the first connection element. The second elastic element is connected to the first elastic element. The first elastic element drives the second elastic element to rotate relative to the second connection element. The first elastic element is rotatable between a first limit position and a second limit position. When the first elastic element is in the first limit position, the second elastic element is compressed.

Abstract: Disclosed herein an apparatus and a method for detecting buried features using backscattered particles. In an example, the apparatus comprises a source of charged particles; a stage; optics configured to direct a beam of the charged particles to a sample supported on the stage; a signal detector configured to detect backscattered particles of the charged particles in the beam from the sample; wherein the signal detector has angular resolution. In an example, the methods comprises obtaining an image of backscattered particles from a region of a sample; determining existence or location of a buried feature based on the image.

Abstract: A hinge is provided. The hinge includes a first connection element, a second connection element, a first elastic element, and a second elastic element. The second connection element is connected to the first connection element. The first elastic element is connected to the first connection element. The second elastic element is connected to the first elastic element. The first elastic element drives the second elastic element to rotate relative to the second connection element. The first elastic element is rotatable between a first limit position and a second limit position. When the first elastic element is in the first limit position, the second elastic element is compressed.

Abstract: Disclosed herein an apparatus and a method for detecting buried features using backscattered particles. In an example, the apparatus comprises a source of charged particles; a stage; optics configured to direct a beam of the charged particles to a sample supported on the stage; a signal detector configured to detect backscattered particles of the charged particles in the beam from the sample; wherein the signal detector has angular resolution. In an example, the methods comprises obtaining an image of backscattered particles from a region of a sample; determining existence or location of a buried feature based on the image.

Abstract: An optical lens of the present disclosure assembly includes, in order from an object side to an image side, a first lens element, a second lens element, a third lens element, a fourth lens element, a fifth lens element, a sixth lens element, an optical filter and a sensor. The optical lens also has an axis. The first lens element and the fifth lens element have negative power, the second lens element, the third lens element, the fourth lens element and the sixth lens element have positive power.