Abstract: A micro coaxial RF connector applied to an audio processing unit includes a male connector with a connecting portion at an end, and the connecting portion has plural first screw threads, and the other end of the male connector is a transmission line, and a female connector is installed at a playing end of the audio processing unit, and the female connector has a groove, and plural second screw threads formed on the inner surface of the groove, configured to be corresponsive to the first screw threads, and electrically connected to the male connector. With the aforementioned locking and connecting method, the connector after many times of plugging and unplugging will not be loosened or damaged so easily, compared with the conventional insertion and flipping method, and the connector still maintains its original tightness after a long time of use, so as to maintain a stable sound quality.

Abstract: A serial peripheral flash memory device uses a plurality of dummy input/output terminals to enable the selection of a parallel mode for devices that have a slower serial clock speed. In parallel mode, data is transmitted over the plurality of dummy input/output terminals to allow a plurality of bits to be transmitted at the same time improving the data transmission rate at the slower serial clock speed.

Abstract: A serial peripheral flash memory device uses a plurality of dummy input/output terminals to enable the selection of a parallel mode for devices that have a slower serial clock speed. In parallel mode, data is transmitted over the plurality of dummy input/output terminals to allow a plurality of bits to be transmitted at the same time improving the data transmission rate at the slower serial clock speed.

Abstract: A double &dgr;-doped In0.34 Al0.66As0.85 Sb0.15/InP heterostructure field-effect transistor has been successfully grown by metalorganic chemical vapor deposition for the first time. Electron mobilities can be enhanced without sacrificing the carrier densities. A turn-on voltage as high as 1 V along with an extremely low gate reverse leakage current of 111 &mgr;A/mm at Vgs=−40V is achieved. The three-terminal on-and off-state breakdown voltages are as high as 40.8V and 16.1V, respectively. The output conductance is as low as 1.8 mS/mm even when the drain-to-source voltage is 15V. The gds is significantly smaller than that of our previously reported InAlAsSb/InGaAs/InP HFET. These characteristics are attributed to the use of the coupled &dgr;-doped structure, InP channel, In0.34 Al0.66As0.85 Sb0.15 Schottky layer, and to the large conduction-band discontinuity (&Dgr;Ec) at the InAlAsSb/InP heterojunction.

Abstract: A double &dgr;-doped In0.34 Al0.66As0.85 Sb0.15/InP heterostructure field-effect transistor has been successfully grown by metalorganic chemical vapor deposition for the first time. Electron mobilities can be enhanced without sacrificing the carrier densities. A turn-on voltage as high as 1 V along with an extremely low gate reverse leakage current of 111 &mgr;A/mm at Vgs=−40V is achieved. The three-terminal on-and off-state breakdown voltages are as high as 40.8V and 16.1V,respectively. The output conductance is as low as 1.8 mS/mm even when the drain-to-source voltage is 15V. The gds is significantly smaller than that of our previously reported InAlAsSb/InGaAs/InP HFET. These characteristics are attributed to the use of the coupled &dgr;-doped structure, InP channel, In0.34 Al0.66As0.85 Sb0.15 Schottky layer'and to the large conduction-band discontinuity(&Dgr;Ec) at the InAlAsSb/InP heterojunction.