Abstract: A ceiling fan including a fan device and a remote control is provided. The fan device includes a motor and a control unit. The remote control includes a gesture sensing unit and a processing unit. The gesture sensing unit includes a sensing module that is configured to obtain a sense image of an object, and includes a storage medium that stores a plurality of data sets and different reference tracks that respectively correspond to the data sets. The processing unit is configured to: obtain a movement track of the object; obtain a corresponding one of the data sets when the movement track conforms with one of the reference tracks; and output a command that is related to said corresponding one of the data sets to the control unit. In response to receipt of the command, the control unit adjusts rotational speed of the motor according to the command.

Abstract: Semiconductor structures and methods of forming the same are provided. A method according to the present disclosure includes forming a stack of epitaxial layers over a substrate, forming a first fin-like structure and a second fin-like structure from the stack, forming an isolation feature between the first fin-like structure and the second fin-like structure, forming a cladding layer over the first fin-like structure and the second fin-like structure, conformally depositing a first dielectric layer over the cladding layer, depositing a second dielectric layer over the first dielectric layer, planarizing the first dielectric layer and the second dielectric layer until the cladding layer are exposed, performing an etch process to etch the second dielectric layer to form a helmet recess, performing a trimming process to trim the first dielectric layer to widen the helmet recess, and depositing a helmet feature in the widened helmet recess.

Abstract: Some implementations described herein provide a semiconductor device and methods of formation. The semiconductor device includes a gate-all-around transistor having one or more dielectric regions that include or more dielectric gases. The dielectric regions may include a first dielectric region between epitaxial regions (e.g., source/drain regions) and a first portion of a gate structure of the gate-all-around transistor. The dielectric regions may further include a second dielectric region between a contact structure of gate-all-around transistor and a second portion of the gate structure. By including the dielectric regions in the gate-all-around transistor, a parasitic capacitance associated with the gate-all-around transistor may be reduced relative to another gate-all-around transistor not including the dielectric regions.

Abstract: A polypropylene fabric structure, a manufacturing method thereof, and a protective clothing including the polypropylene fabric structure are provided. The polypropylene fabric structure includes a polypropylene spunbond nonwoven fabric and a polypropylene meltblown nonwoven fabric. The polypropylene meltblown nonwoven fabric is directly bonded to the polypropylene spunbond nonwoven fabric. The polypropylene meltblown nonwoven fabric is made of a material including polypropylene having a melt flow index between 1700 g/10 min and 2000 g/10 min and a melting point between 155° C. and 165° C.

Abstract: A semiconductor device includes a semiconductor substrate, a gate electrode, a source/drain contact, a conductive structure, an interlayer dielectric (ILD) layer, an etch stop layer, and a dielectric liner. The semiconductor substrate has a channel region and a source/drain region. The gate electrode is over the channel region. The source/drain contact is over the source/drain region. The conductive structure is over a top surface of the source/drain contact. The ILD layer surrounds the conductive structure and over the gate electrode. The etch stop layer is over the conductive structure and the ILD layer. The etch stop layer comprises a material different from that of the ILD layer. A dielectric liner at a sidewall the conductive structure. The dielectric liner extends from the top surface of the source/drain contact to a bottom surface of the etch stop layer.

Abstract: A method for manufacturing an elastic fiber and the elastic fiber are provided. The method includes: providing a thermoplastic polyester elastomer; drying the thermoplastic polyester elastomer; melting the thermoplastic polyester elastomer by an extruder to form a melt; extruding the melt by a spinneret plate to form a plurality of filamentous streams; feeding the filamentous streams into a spinning channel for cooling and curing to form a plurality of monofilaments; and bundling and oiling the monofilaments by an oil wheel, after extending and guiding the monofilaments by a first godet roller and a second godet roller, and winding the monofilaments by a winder to obtain a thermoplastic polyester elastic fiber.

Abstract: The present disclosure describes a semiconductor structure and a method for forming the same. The semiconductor structure can include a substrate, a gate structure over the substrate, a layer of dielectric material over the gate structure, a source/drain (S/D) contact layer formed through and adjacent to the gate structure, and a trench conductor layer over and in contact with the S/D contact layer. The S/D contact layer can include a layer of platinum-group metallic material and a silicide layer formed between the substrate and the layer of platinum-group metallic material. A top width of a top portion of the layer of platinum-group metallic material can be greater than or substantially equal to a bottom width of a bottom portion of the layer of platinum-group metallic material.

Abstract: A semiconductor package and a manufacturing method for the semiconductor package are provided. The semiconductor package includes a molded semiconductor device, a first redistribution structure, and conductive vias. The molded semiconductor device comprises a sensor die with a first surface and a second surface opposite the first surface, wherein the sensor die has an input/output region and a sensing region at the first surface. The first redistribution structure is disposed on the first surface of the sensor die, wherein the first redistribution structure covers the input/output region and exposes the sensing region, and the first redistribution structure comprises a conductive layer having a redistribution pattern and a ring structure. The redistribution pattern is electrically connected with the sensor die. The ring structure surrounds the sensing region and is separated from the redistribution pattern, wherein the ring structure is closer to the sensing region than the redistribution pattern.

Abstract: A resin composition is provided, which includes a novel low-dielectric resin, a cross-linking agent, a polyphenylene ether resin, a halogen-free flame retardant, a spherical silica, and a siloxane coupling agent. The novel low-dielectric resin has a styrene proportion of 10% to 40%, a divinylbenzene proportion of 10% to 40%, and an ethylene proportion of 10% to 20%, which may effectively reduce the dissipation factor of the resin composition, and achieve the electrical specification of low dielectric.

Abstract: A resin composition is provided. The resin composition includes a resin mixture, a flame retardant, a spherical silica and a siloxane coupling agent. The resin mixture includes a first resin polymerized by a monomer mixture including styrene, divinylbenzene and ethylene, a second resin including a polyphenylene ether resin modified by bismaleimide, and a SBS resin. The resin composition of the present disclosure can have a high glass transition temperature, a low dielectric constant and a low dissipation factor.

Abstract: A resin composition including a modified maleimide resin is provided. The modified maleimide resin is formed from a dicyclopentadiene (DCPD)-based resin having an amino group and a maleic anhydride by a condensation polymerization. The dicyclopentadiene-based resin having an amino group is formed by nitration reaction and hydrogenation reaction of dicyclopentadiene phenolic resin.

Abstract: Examples pertaining to preamble puncturing negotiation in wireless communications are described. A station (STA) may receive a control frame, and, in response, apply the MRU pattern for one or more transmissions or receptions in a transmission opportunity (TXOP). In the control frame, either a plurality of first reserved bits in a SERVICE field or a plurality of bits in a User Info field are set to indicate a multiple resource unit (MRU) pattern regarding preamble puncturing.

Abstract: A resin composition is provided. The resin composition includes a resin mixture, a flame retardant, spherical silica and a siloxane coupling agent. The resin mixture includes a first resin polymerized by a monomer mixture comprising styrene, divinylbenzene and ethylene, a second resin polymerized by modified dicyclopentadiene diamine and maleic anhydride, and a SBS resin. The resin composition of the disclosure may have a high glass transition temperature and a low dielectric constant and a low dissipation factor after curing.

Abstract: A resin composition including a modified maleimide resin is provided. The modified maleimide resin is formed from a dicyclopentadiene (DCPD)-based resin having an amino group and a maleic anhydride by a condensation polymerization. The dicyclopentadiene-based resin having an amino group is formed by nitration reaction and hydrogenation reaction of dicyclopentadiene phenolic resin.

Abstract: A resin composition is provided. The resin composition includes a resin and an inorganic filler. The resin includes a bismaleimide resin and a polyphenylene ether resin. The inorganic filler includes a first inorganic filler and a second inorganic filler. An average particle size of the first inorganic filler is 0.3 ?m to 0.6 ?m. An average particle size of the second inorganic filler is 20 ?m to 50 ?m.

Abstract: A resin composition and use thereof, wherein the resin composition includes a resin base, an inorganic filler and a siloxane coupling agent. The resin base includes bismaleimide resins, benzoxazine resins, and naphthenic epoxy resins, and the inorganic filler includes strontium titanate or calcium-doped strontium titanate.

Abstract: A resin composition is provided, which includes a novel low dielectric resin, a SBS resin, a cross-linking agent, a PPE resin, a halogen-free flame retardant, a spherical silica, and a siloxane coupling agent. The novel low dielectric resin is a maleimide resin. With the formula, the resin composition may improve resin fluidity and glass transition temperature (Tg) while maintaining low dielectric, thereby enhancing the overall processability.

Abstract: A composite material substrate includes an inorganic filler, a resin composition, and a dispersant. The resin composition includes a bismaleimide resin, a naphthalene ring-containing epoxy resin, and a benzoxazine resin. The inorganic filler, the resin composition, and the dispersant are mixed together.

Abstract: The invention provides a high thermal conductivity fluororesin composition and products thereof. The high thermal conductivity fluororesin composition includes a polytetrafluoroethylene resin, a fluorine-containing copolymer, spherical inorganic fillers and impregnation aids.

Abstract: A semiconductor chip includes a first intellectual property block. There are a second intellectual property block and a third intellectual property block around the first intellectual property block. There is a multiple metal layer stack over the first intellectual property block, the second intellectual property block, and the third intellectual property block. An interconnect structure is situated in the upper portion of the multiple metal layer stack. The interconnect structure is configured for connecting the first intellectual property block and the second intellectual property block. In addition, at least a part of the interconnect structure extends across and over the third intellectual property block.