Patents by Inventor Chia-Ying Liu
Chia-Ying Liu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240119559Abstract: The present disclosure discloses an image enlarging apparatus having deep learning mechanism. A deep learning circuit includes an image downsizing circuit, an image characteristic analyzing circuit, a weighting reallocating circuit and an image upsizing circuit. The image downsizing circuit downsizes an input image to generate a downsized image. The image characteristic analyzing circuit analyzes the downsized image according to image characteristics to generate categorized images. The weighting reallocating circuit performs weighting reallocating on the categorized images according to image weighting parameters corresponding to the image characteristics to generate weighting reallocated images. The image upsizing circuit upsizes the weighting reallocated images to generate adjusted images. A concatenating circuit concatenates the input image and the adjusted images to generate concatenated images.Type: ApplicationFiled: October 3, 2023Publication date: April 11, 2024Inventors: CHON-HOU SIO, CHIA-WEI YU, KANG-YU LIU, YEN-YING CHEN
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Publication number: 20240096998Abstract: The present disclosure describes a method for forming metallization layers that include a ruthenium metal liner and a cobalt metal fill. The method includes depositing a first dielectric on a substrate having a gate structure and source/drain (S/D) structures, forming an opening in the first dielectric to expose the S/D structures, and depositing a ruthenium metal on bottom and sidewall surfaces of the opening. The method further includes depositing a cobalt metal on the ruthenium metal to fill the opening, reflowing the cobalt metal, and planarizing the cobalt and ruthenium metals to form S/D conductive structures with a top surface coplanar with a top surface of the first dielectric.Type: ApplicationFiled: November 21, 2023Publication date: March 21, 2024Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Shuen-Shin LIANG, Chij-chien CHI, Yi-Ying LIU, Chia-Hung CHU, Hsu-Kai CHANG, Cheng-Wei CHANG, Chein-Shun LIAO, Keng-chu LIN, KAi-Ting HUANG
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Patent number: 11557625Abstract: An image sensor with embedded wells for accommodating light emitters includes a semiconductor substrate including an array of doped sensing regions respectively corresponding to an array of photosensitive pixels of the image sensor. The semiconductor substrate forms an array of wells. Each well is aligned with a respective doped sensing region to facilitate detection, by the photosensitive pixel that includes said respective doped sensing region, of light emitted to the photosensitive pixel by a light emitter disposed in the well. The image sensor further includes, between adjacent doped sensing regions, a light-blocking barrier to reduce propagation of light to the doped sensing-region of each photosensitive pixel from wells not aligned therewith.Type: GrantFiled: April 20, 2020Date of Patent: January 17, 2023Assignee: OmniVision Technologies, Inc.Inventors: Chia-Ying Liu, Wu-Zang Yang, Chia-Jung Liu, Ming Zhang, Yin Qian, Alireza Bonakdar
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Patent number: 11201124Abstract: The present disclosure provides a semiconductor device. The semiconductor device includes a semiconductor substrate and a first deep trench isolation (DTI) structure filled with a dielectric material formed on the semiconductor substrate. The first DTI structure is disposed in the first seal ring region and is extended into the semiconductor substrate. The semiconductor substrate has a pixel array region and a first seal ring region. The first seal ring region is proximate to an edge of the semiconductor substrate and surrounds the pixel array region. The first DTI structure is formed in the first seal ring region and surrounds the pixel array region.Type: GrantFiled: July 29, 2019Date of Patent: December 14, 2021Assignee: OMNIVISION TECHNOLOGIES, INC.Inventors: Chia-Ying Liu, Wu-Zang Yang, Chia-Jung Liu, Chi-Chih Huang
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Publication number: 20210327948Abstract: An image sensor with embedded wells for accommodating light emitters includes a semiconductor substrate including an array of doped sensing regions respectively corresponding to an array of photosensitive pixels of the image sensor. The semiconductor substrate forms an array of wells. Each well is aligned with a respective doped sensing region to facilitate detection, by the photosensitive pixel that includes said respective doped sensing region, of light emitted to the photosensitive pixel by a light emitter disposed in the well. The image sensor further includes, between adjacent doped sensing regions, a light-blocking barrier to reduce propagation of light to the doped sensing-region of each photosensitive pixel from wells not aligned therewith.Type: ApplicationFiled: April 20, 2020Publication date: October 21, 2021Inventors: Chia-Ying LIU, Wu-Zang YANG, Chia-Jung LIU, Ming ZHANG, Yin QIAN, Alireza BONAKDAR
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Publication number: 20210035926Abstract: The present disclosure provides a semiconductor device. The semiconductor device includes a semiconductor substrate and a first deep trench isolation (DTI) structure filled with a dielectric material formed on the semiconductor substrate. The first DTI structure is disposed in the first seal ring region and is extended into the semiconductor substrate. The semiconductor substrate has a pixel array region and a first seal ring region. The first seal ring region is proximate to an edge of the semiconductor substrate and surrounds the pixel array region. The first DTI structure is formed in the first seal ring region and surrounds the pixel array region.Type: ApplicationFiled: July 29, 2019Publication date: February 4, 2021Inventors: CHIA-YING LIU, WU-ZANG YANG, CHIA-JUNG LIU, CHI-CHIH HUANG
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Patent number: 10739646Abstract: A reflective semiconductor device includes integrated circuitry disposed in a semiconductor layer. A first plurality of mirrors is formed in a mirror layer over the semiconductor layer, and each of the first plurality of mirrors is spaced apart from one another by at least a uniform width. A thin dielectric film layer covers sidewalls of the first plurality of mirrors and the semiconductor layer in the regions between the spaced apart first plurality of mirrors. A second plurality of mirrors are formed in the mirror layer between the thin dielectric film layer covered sidewalls of the first plurality of mirrors and over the thin dielectric film layer covering the semiconductor layer. Each one of the first and second plurality of mirrors has the uniform width, and is coupled to the integrated circuitry disposed in the semiconductor layer.Type: GrantFiled: April 30, 2019Date of Patent: August 11, 2020Assignee: OmniVision Technologies, Inc.Inventors: Ming Zhang, Yin Qian, Libo Weng, Dyson H. Tai, Chia-Ying Liu, Chia-Jung Liu
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Patent number: 10368753Abstract: An embodiment in accordance with the present invention provides a system and method for determining cardiac events. The system and method include using an imaging modality to obtain a cardiac image of the subject. The image is then used to determine the subject's systolic, post-systolic, and early diastolic strain peaks. Additionally, a strain rate index (SRI) value is computed for the subject using the systolic, post-systolic, and early diastolic strain peaks. The SRI value can then be used to determine a level of risk of cardiac failure. Further, a likelihood of atrial fibrillation can also be determined. The SRI value and risk of cardiac event can then be used to create a treatment plan for the subject, if necessary.Type: GrantFiled: November 1, 2013Date of Patent: August 6, 2019Assignee: The Johns Hopkins UniversityInventors: Bharath Ambale Venkatesh, Anderson Armstrong, Joao A. C. Lima, Chia-Ying Liu, Boaz D. Rosen
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Patent number: 10121809Abstract: A backside-illuminated color image sensor with crosstalk-suppressing color filter array includes (a) a silicon layer including an array of photodiodes and (b) a color filter layer on the light-receiving surface of the silicon layer, wherein the color filter layer includes (i) an array of color filters cooperating with the array of photodiodes to form a respective array of color pixels and (ii) a light barrier grid disposed between the color filters to suppress transmission of light between adjacent ones of the color filters. The light barrier is spatially non-uniform across the color filter layer to account for variation of chief ray angle across the array of color filters.Type: GrantFiled: September 13, 2016Date of Patent: November 6, 2018Assignee: OmniVision Technologies, Inc.Inventors: Chin-Poh Pang, Boyang Zhang, Chia-Ying Liu, Wu-Zang Yang, Chih-Wei Hsiung, Chun-Yung Ai
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Publication number: 20180076247Abstract: A backside-illuminated color image sensor with crosstalk-suppressing color filter array includes (a) a silicon layer including an array of photodiodes and (b) a color filter layer on the light-receiving surface of the silicon layer, wherein the color filter layer includes (i) an array of color filters cooperating with the array of photodiodes to form a respective array of color pixels and (ii) a light barrier grid disposed between the color filters to suppress transmission of light between adjacent ones of the color filters.Type: ApplicationFiled: September 13, 2016Publication date: March 15, 2018Inventors: Chin-Poh Pang, Boyang Zhang, Chia-Ying Liu, Wu-Zang Yang, Chih-Wei Hsiung, Chun-Yung Ai
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Patent number: 9735196Abstract: A method of fabricating a pixel array includes forming a transistor network along a frontside of a semiconductor substrate. A contact element is formed for every pixel in the pixel array that is electrically coupled to a transistor within the transistor network. An interconnect layer is formed upon the frontside to control the transistor network with a dielectric that covers the contact element. A cavity is formed in the interconnect layer. A conductive layer is formed along cavity walls of the cavity and a dielectric layer is formed over the conductive layer within the cavity. A photosensitive semiconductor material is deposited over the dielectric layer within the cavity. An electrode cavity is formed that extends into the contact element. The electrode cavity is at least partially filled with a conductive material to form an electrode. The electrode, the conductive layer, and the photosensitive semiconductor material form a photosensitive capacitor.Type: GrantFiled: October 5, 2016Date of Patent: August 15, 2017Assignee: OmniVision Technologies, Inc.Inventors: Wu-Zang Yang, Chia-Ying Liu, Chih-Wei Hsiung, Chun-Yung Ai, Dyson H. Tai, Dominic Massetti
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Patent number: 9659989Abstract: An image sensor pixel includes a photodiode disposed in a semiconductor material, and doped regions surrounding the photodiode, at least in part. The doped regions include a doped portion of the semiconductor material. Deep trench isolation structures are disposed in the doped regions, and surround the photodiode at least in part. The deep trench isolation structures include a SiGe layer disposed on side walls of the deep trench isolation structures, a high-k dielectric disposed on the SiGe layer, and a filler material.Type: GrantFiled: April 19, 2016Date of Patent: May 23, 2017Assignee: OmniVision Technologies, Inc.Inventors: Chun-Yung Ai, Chia-Ying Liu, Wu-Zang Yang
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Publication number: 20170025468Abstract: A method of fabricating a pixel array includes forming a transistor network along a frontside of a semiconductor substrate. A contact element is formed for every pixel in the pixel array that is electrically coupled to a transistor within the transistor network. An interconnect layer is formed upon the frontside to control the transistor network with a dielectric that covers the contact element. A cavity is formed in the interconnect layer. A conductive layer is formed along cavity walls of the cavity and a dielectric layer is formed over the conductive layer within the cavity. A photosensitive semiconductor material is deposited over the dielectric layer within the cavity. An electrode cavity is formed that extends into the contact element. The electrode cavity is at least partially filled with a conductive material to form an electrode. The electrode, the conductive layer, and the photosensitive semiconductor material form a photosensitive capacitor.Type: ApplicationFiled: October 5, 2016Publication date: January 26, 2017Inventors: Wu-Zang Yang, Chia-Ying Liu, Chih-Wei Hsiung, Chun-Yung Ai, Dyson H. Tai, Dominic Massetti
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Patent number: 9520431Abstract: An image sensor includes a semiconductor layer with a plurality of photodiodes. A plurality of isolation structures is disposed in the back side of the semiconductor layer between individual photodiodes in the plurality of photodiodes. The plurality of isolation structures extend into the back side of the semiconductor layer a first depth and extend out of the back side of the semiconductor layer a first length. A plurality of light filters is disposed proximate to the back side of the semiconductor layer such that the plurality of isolation structures is disposed between individual light filters in the plurality of light filters. An antireflection coating is also disposed between the semiconductor layer and the plurality of light filters.Type: GrantFiled: October 3, 2014Date of Patent: December 13, 2016Assignee: OmniVision Technologies, Inc.Inventors: Wei Zheng, Chia-Ying Liu, Chun-Yung Ai, Wu-Zang Yang, Chih-Wei Hsiung, Chen-Wei Lu
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Patent number: 9490282Abstract: An image sensor pixel, and image sensor, and a method of fabricating the same is disclosed. The image pixel includes a photosensitive capacitor and a transistor network. The photosensitive capacitor includes an electrode, a conductive layer, a dielectric layer, and a photosensitive semiconductor material. The conductive layer is disposed around the electrode and the dielectric layer is formed between the conductive layer and the electrode. The photosensitive semiconductor material is for generating an image signal in response to image light and is disposed between the dielectric layer and the electrode. The transistor network is coupled to readout the image signal from the electrode of the photosensitive capacitor.Type: GrantFiled: March 19, 2015Date of Patent: November 8, 2016Assignee: OmniVision Technologies, Inc.Inventors: Wu-Zang Yang, Chia-Ying Liu, Chih-Wei Hsiung, Chun-Yung Ai, Dyson H. Tai, Dominic Massetti
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Publication number: 20160276380Abstract: An image sensor pixel, and image sensor, and a method of fabricating the same is disclosed. The image pixel includes a photosensitive capacitor and a transistor network. The photosensitive capacitor includes an electrode, a conductive layer, a dielectric layer, and a photosensitive semiconductor material. The conductive layer is disposed around the electrode and the dielectric layer is formed between the conductive layer and the electrode. The photosensitive semiconductor material is for generating an image signal in response to image light and is disposed between the dielectric layer and the electrode. The transistor network is coupled to readout the image signal from the electrode of the photosensitive capacitor.Type: ApplicationFiled: March 19, 2015Publication date: September 22, 2016Inventors: Wu-Zang Yang, Chia-Ying Liu, Chih-Wei Hsiung, Chun-Yung Ai, Dyson H. Tai, Dominic Massetti
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Patent number: 9443899Abstract: An improved back side illuminated (BSI) complementary metal oxide semiconductor (CMOS) image sensor, and associated methods, improve phase detecting capability. The BSI CMOS image sensor has an array of pixels that include a phase detecting pixel (PDP), a composite grid formed of a buried color filter array and composite metal/oxide grid, and a photodiode implant corresponding to the PDP. A PDP mask is fabricated with a deep trench isolation (DTI) structure proximate the PDP and positioned to mask at least part of the photodiode implant such that the PDP mask is positioned between the composite grid and the photodiode implant.Type: GrantFiled: November 4, 2015Date of Patent: September 13, 2016Assignee: OmniVision Technologies, Inc.Inventors: Chia-Ying Liu, Chin-Poh Pang, Chih-Wei Hsiung, Vincent Venezia
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Patent number: 9431452Abstract: An image sensor includes a photodiode proximate to a front side of semiconductor material to accumulate image charge. A metal layer reflector structure is disposed in a dielectric layer proximate to the front side of the semiconductor material. A contact reflecting ring structure is disposed in the dielectric layer between the metal layer reflector structure and a contact etch stop layer disposed over the front side of the semiconductor material. The contact reflecting ring structure defines a portion of a light guide in the dielectric layer such that light that is directed through a back side of the semiconductor material, through the photodiode, and reflected from the metal layer reflector structure back through the photodiode is confined to remain within an interior of the contact reflecting ring structure when passing through the dielectric layer between the photodiode and the metal layer reflector structure.Type: GrantFiled: May 13, 2015Date of Patent: August 30, 2016Assignee: OmniVision Technologies, Inc.Inventors: Chia-Ying Liu, Chih-Wei Hsiung
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Publication number: 20160099266Abstract: An image sensor includes a semiconductor layer with a plurality of photodiodes. A plurality of isolation structures is disposed in the back side of the semiconductor layer between individual photodiodes in the plurality of photodiodes. The plurality of isolation structures extend into the back side of the semiconductor layer a first depth and extend out of the back side of the semiconductor layer a first length. A plurality of light filters is disposed proximate to the back side of the semiconductor layer such that the plurality of isolation structures is disposed between individual light filters in the plurality of light filters. An antireflection coating is also disposed between the semiconductor layer and the plurality of light filters.Type: ApplicationFiled: October 3, 2014Publication date: April 7, 2016Inventors: Wei Zheng, Chia-Ying Liu, Chun-Yung Ai, Wu-Zang Yang, Chih-Wei Hsiung, Chen-Wei Lu
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Patent number: 9276029Abstract: A color image sensor includes a plurality of pixel cells arranged in a pixel array. A plurality of color filters is arranged in a color filter array disposed over the pixel array. Each color filter is aligned with a corresponding underlying pixel cell. An optical isolation grid is disposed over the color filter array such that incident light is directed through the optical isolation grid prior to be being directed through the color filter array to the pixel array. The optical isolation grid includes a plurality of sidewalls arranged to define a plurality of openings in the optical isolation grid. Each opening is aligned with a corresponding color filter such that each color filter is optically isolated by the optical isolation grid to receive incident light only through a corresponding aligned one of the plurality of openings.Type: GrantFiled: January 20, 2015Date of Patent: March 1, 2016Assignee: OmniVision Technologies, Inc.Inventors: Chen-Wei Lu, Chia-Ying Liu, Yin Qian, Jin Li