Abstract: A method of forming a semiconductor device. A substrate having a fin structure is provided. A dummy gate is formed on the fin structure. A polymer block is formed adjacent to a corner between the dummy gate and the fin structure. The polymer block is subjected to a nitrogen plasma treatment, thereby forming a nitridation layer in proximity to a sidewall of the dummy gate under the polymer block. After subjecting the polymer block to the nitrogen plasma treatment, a seal layer is formed on the sidewall of the dummy gate and on the polymer block. An epitaxial layer is then grown on a source/drain region of the fin structure. The dummy gate is then replaced with a metal gate.

Abstract: A semiconductor device includes substrate having a fin structure thereon, a gate structure overlying the fin structure, a polymer block at a corner between the gate structure and the fin structure, and a source/drain region on the fin structure. The polymer block includes a nitridation layer in proximity to a sidewall of the gate structure.

Abstract: A semiconductor device includes substrate having a fin structure thereon, a gate structure overlying the fin structure, a polymer block at a corner between the gate structure and the fin structure, and a source/drain region on the fin structure. The polymer block includes a nitridation layer in proximity to a sidewall of the gate structure.

Abstract: An inspection device is provided, including a base, a circuit assembly, an electrocardiogram sensor, a diaphragm, an annular member, and a positioning member. The base has a top surface, a bottom surface, a guiding portion, an opening, and an accommodating space. The guiding portion is formed on the top surface, the opening is formed on the bottom surface, and the accommodating space is formed between the top surface and the bottom surface. The circuit assembly is disposed in the accommodating space, and has a first contact and a second contact. The electrocardiogram sensor is disposed on the bottom surface and electrically connected to the circuit assembly. The diaphragm covers the opening. The annular member is rotatably connected to the base and has a guiding member. The guiding member is slidably connected to the guiding portion. The positioning member is affixed to the annular member and has a contacting portion.

Abstract: A semiconductor device includes first and second fins, first and second hafnium oxide layers, first and second cap layers, and first and second metal gate electrodes. The first and second fins protrude above a substrate and respectively have an n-channel region and a p-channel region. The first and second hafnium oxide layers wrap around the n-channel region and the p-channel region, respectively. The first and second cap layers wrap around the first and second annular hafnium oxide layers, respectively. The first and second cap layers are made of a same material that is lanthanum oxide, yttrium oxide, or strontium oxide. The first and second metal gate electrodes wrap around the first and second cap layers, respectively. The first and second metal gate electrodes have a same metal composition. The first and second gate dielectrics have a same dielectric composition.

Abstract: A game controller integrates a trigger at a side of a planar controller housing, the trigger rotating within the plane of the controller housing about an axle disposed perpendicular to the plane. The trigger rotationally couples to the axle at a trigger bracket that fixedly coupled to a frame. A guide integrated in the frame engages a member extending from the trigger to manage trigger motion. A cover couples to the frame and separate from the trigger to enhance housing robustness.

Abstract: A recording device for injection device includes a housing, a viewing window, a photographic module, a light splitting element and a signal transmission device. The housing is removably mounted on a dose scale window of an injection device. The viewing window is formed on a surface of the housing, and a viewing path is formed from the viewing window to the dose scale window. The photographic module is located on the housing, and provided with an image-capturing optical axis which is perpendicular to the viewing path. The light splitting element is located at an intersection of the viewing path and the image-capturing optical axis for guiding information located in the dose scale window to the photographic module and the viewing window, respectively. The signal transmission device is electrically connected to the photographic module for transmitting signals of the photographic module to an external device.

Abstract: A method for fabricating a semiconductor device includes the steps of: providing a substrate having a NMOS region and a PMOS region; forming a first gate structure on the NMOS region and a second gate structure on the PMOS region; forming a seal layer on the first gate structure and the second gate structure; forming a first lightly doped drain (LDD) adjacent to the first gate structure; forming a second LDD adjacent to the second gate structure; and performing a soak anneal process to boost an oxygen concentration of the seal layer for reaching a saturation level.

Abstract: A game controller has first and second controller housings having an attachment guide structure that detachably couples to an attachment tab structure disposed on opposing sides of an information handling system and a bridge. Input devices of the controller housing communicate directly with the information handling system through opposing pins and pads disposed in the attachment features or indirectly by communicating with the bridge through opposing pins and pads so the bridge communicates with the information handling system. The attachment guide structure has opposing lips with plural slots that pass tabs of the attachment tab structure through so that a sliding motion engages the tabs behind the lips.

Abstract: A semiconductor device includes first and second nanowire structures, first and second annular hafnium oxide layers, first and second annular cap layers, and first and second metal gate electrodes. The first and second nanowire structures are suspended over a substrate and respectively have an n-channel region and a p-channel region. The first and second annular hafnium oxide layers encircle the n-channel region and the p-channel region, respectively. The first and second annular cap layers encircle the first and second annular hafnium oxide layers, respectively. The first and second annular cap layers are made of a same material that is lanthanum oxide, yttrium oxide, or strontium oxide. The first and second metal gate electrodes encircle the first and second annular cap layers, respectively. The first and second metal gate electrodes have a same metal composition.

Abstract: A farm sensing system is provided. The farm sensing system includes a cloud server, a sensing apparatus, and a computer device. The sensing apparatus is configured to be connected to a specific sensor disposed on a farm. The computer device is configured to obtain specific sensor data generated by the specific sensor through the cloud server. In response to there being potential failure of the specific sensor, the sensing apparatus enters a sensor-calibration mode. In response to a reference sensor being connected to the sensing apparatus, the sensing apparatus builds a calibration table by periodically receiving specific sensor data and reference sensor data, and executes a finite-state machine to perform a calibration procedure on each entry in the calibration table.