Abstract: In some implementations, one or more semiconductor processing tools may form a metal cap on a metal gate. The one or more semiconductor processing tools may form one or more dielectric layers on the metal cap. The one or more semiconductor processing tools may form a recess to the metal cap within the one or more dielectric layers. The one or more semiconductor processing tools may perform a bottom-up deposition of metal material on the metal cap to form a metal plug within the recess and directly on the metal cap.

Abstract: A semiconductor package includes a base comprising a top surface and a bottom surface that is opposite to the top surface; a first semiconductor chip mounted on the top surface of the base in a flip-chip manner; a second semiconductor chip stacked on the first semiconductor chip and electrically coupled to the base by wire bonding; an in-package heat dissipating element comprising a dummy silicon die adhered onto the second semiconductor chip by using a high-thermal conductive die attach film; and a molding compound encapsulating the first semiconductor die, the second semiconductor die, and the in-package heat dissipating element.

Abstract: Semiconductor device structures having gate structures with tunable threshold voltages are provided. Various geometries of device structure can be varied to tune the threshold voltages. In some examples, distances from tops of fins to tops of gate structures can be varied to tune threshold voltages. In some examples, distances from outermost sidewalls of gate structures to respective nearest sidewalls of nearest fins to the respective outermost sidewalls (which respective gate structure overlies the nearest fin) can be varied to tune threshold voltages.

Abstract: In some implementations, one or more semiconductor processing tools may form a metal cap on a metal gate. The one or more semiconductor processing tools may form one or more dielectric layers on the metal cap. The one or more semiconductor processing tools may form a recess to the metal cap within the one or more dielectric layers. The one or more semiconductor processing tools may perform a bottom-up deposition of metal material on the metal cap to form a metal plug within the recess and directly on the metal cap.

Abstract: The present invention discloses an extrusion process for preparing vegetable casing including preparing a continuous tubular extrudate by extrusion, and transferring the continuous tubular extrudate. The transferring includes repeatedly passing a plurality of separate horizontal posts below the continuous tubular extrudate, hanging the continuous tubular extrudate on the posts so that the continuous tubular extrudate is conveyed by the posts a distance, while a closed space is formed inside the tubular extrudate and between every two adjacent horizontal posts.

Abstract: The present invention discloses an extrusion process for preparing vegetable casing including preparing a continuous tubular extrudate by extrusion, and transferring the continuous tubular extrudate. The transferring includes repeatedly passing a plurality of separate horizontal posts below the continuous tubular extrudate, hanging the continuous tubular extrudate on the posts so that the continuous tubular extrudate is conveyed by the posts a distance, while a closed space is formed inside the tubular extrudate and between every two adjacent horizontal posts.