Abstract: In a manufacturing method of a semiconductor device, a first deformation restriction layer and a second deformation restriction layer are formed on a first main surface and a second main surface of a semiconductor substrate, the first main surface being opposite to the second main surface, and the semiconductor substrate having a device structure formed adjacent to the first main surface. A laser beam is applied through the second deformation restriction layer on the second main surface of the semiconductor substrate so as to irradiate a plane extending at a predetermined depth inside of the semiconductor substrate with the laser beam. A device layer that is a part of the semiconductor substrate including the first main surface and the device structure from a remaining layer of the semiconductor substrate along the plane irradiated with the laser beam.

Abstract: A compound represented by the general formula (I) and a salt thereof: ##STR1## wherein: Rf represents a (C.sub.1 -C.sub.4)haloalkyl group; X.about.Y represents N.dbd.N or CH.dbd.N or the like; A represents a nitrogen atom or CH; Z represents an oxygen or sulfur atom; Rg represents a hydrogen or halogen atom and the like; R1, R2, R3, R4 and R5 are each independently represent a hydrogen or halogen atom or a nitro or cyano group or the like.

Abstract: The present invention provides a nitrogen-containing cyclic compound represented by the formula (1): ##STR1## wherein R.sup.1 represents an alkyl group; R represents a hydrogen atom or an alkyl group; X represents an oxygen or sulfur atom or NR.sup.3 ; Q.sup.1 represents a hydrogen atom, or an alkyl, cycloalkyl, alkenyl or alkynyl group or a phenyl, naphthyl or heterocyclic group etc.; Q.sup.2 represents an alkyl, cycloalkyl or alkenyl group, or a phenyl or thienyl group etc.; A.sup.1 represents a carbon or nitrogen atom; A.sup.2 represents CR.sup.2 or NR.sup.2, or an oxygen or sulfur atom, or SO or SO.sub.2 ; A.sup.3 represents a single bond, or an oxygen or sulfur atom, or CR.sup.5 or NR.sup.5) and a herbicide comprising the same, which herbicide exhibits very high herbicidal activity at very low application rate and has selectivity against crops.

Abstract: The present invention provides a nitrogen-containing cyclic compound represented by the formula (1): ##STR1## (wherein R.sup.1 represents an alkyl group; R represents a hydrogen atom or an alkyl group; X represents an oxygen or sulfur atom or NR.sup.3 ; Q.sup.1 represents a hydrogen atom, or an alkyl, cycloalkyl, alkenyl or alkynyl group, or a phenyl, naphthyl or heterocyclic group etc.; Q.sup.2 represents an alkyl, cycloalkyl or alkenyl group, or a phenyl or thienyl group etc.; A.sup.1 represents a carbon or nitrogen atom; A.sup.2 represents CR.sup.2 or NR.sup.2, or an oxygen or sulfur atom, or SO or SO.sub.2 ; A.sup.3 represents a single bond, or an oxygen or sulfur atom, or CR.sup.5 or NR.sup.5) and a herbicide comprising the same , which herbicide exhibits very high herbicidal activity at very low application rate and has selectivity against crops.

Abstract: Provided are a pyridine derivative represented by the formula (1): ##STR1## wherein R.sup.1, R.sup.2 and R.sup.3 each independently represent a hydrogen atom, a C.sub.1-6 alkyl group, a C.sub.1-4 haloalkyl group, a C.sub.1-4 alkoxy group, a cyano group, a nitro group or a halogen atom,Qa represents a phenyl, pyrazolyl or pyridyl which may be substituted, Qb represents an azole, and X represents oxygen, sulfur or N-R.sup.4,R.sup.4 represents hydrogen or an alkyl group, and an agricultural chemical containing the same, particularly a herbicide.