Patents by Inventor Chian Q. Liu

Chian Q. Liu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 7440546
    Abstract: A zone plate multilayer structure includes a substrate carrying a plurality of alternating layers respectively formed of tungsten silicide (WSi2) and silicon (Si). The alternating layers are sequentially deposited precisely controlling a thickness of each layer from a minimum thickness of a first deposited layer adjacent the substrate to a maximum thickness of a last deposited layer. The first minimum thickness layer has a selected thickness of less than or equal to 5 nm with the thickness of the alternating layers monotonically increasing to provide a zone plate multilayer structure having a thickness of greater than 12 ?m (microns). The x-rays are diffracted in Laue transmission geometry by the specific arrangement of silicon and tungsten silicide.
    Type: Grant
    Filed: December 6, 2006
    Date of Patent: October 21, 2008
    Assignee: UChicago Argonne, LLC
    Inventors: Chian Q. Liu, Raymond P. Conley, Albert T. Macrander, Hyon Chol Kang, G. Brian Stephenson, Jorg Maser
  • Publication number: 20080137810
    Abstract: A zone plate multilayer structure includes a substrate carrying a plurality of alternating layers respectively formed of tungsten silicide (WSi2) and silicon (Si). The alternating layers are sequentially deposited precisely controlling a thickness of each layer from a minimum thickness of a first deposited layer adjacent the substrate to a maximum thickness of a last deposited layer. The first minimum thickness layer has a selected thickness of less than or equal to 5 nm with the thickness of the alternating layers monotonically increasing to provide a zone plate multilayer structure having a thickness of greater than 12 ?m (microns). The x-rays are diffracted in Laue transmission geometry by the specific arrangement of silicon and tungsten silicide.
    Type: Application
    Filed: December 6, 2006
    Publication date: June 12, 2008
    Inventors: Chian Q. Liu, Raymond P. Conley, Albert T. Macrander, Hyon Chol Kang, G. Brian Stephenson, Jorg Maser
  • Patent number: 5116693
    Abstract: A high density magneto-optical information storage medium utilizing the properties of an ultrathin iron film on a palladium substrate. The present invention comprises a magneto-optical medium capable of thermal and magnetic stability and capable of possessing a vertical orientation of the magnetization vector for the magnetic material. Data storage relies on the temperature dependence of the coercivity of the ultrathin film. Data retrieval derives from the Kerr effect which describes the direction of rotation of a plane of polarized light traversing the ultrathin magnetic material as a function of the orientation of the magnetization vector.
    Type: Grant
    Filed: May 22, 1990
    Date of Patent: May 26, 1992
    Assignee: The United States of America as represented by the United States Department of Energy
    Inventors: Chian Q. Liu, Samuel D. Bader