Abstract: An insulating encapsulation structure is applied to a chip type solid electrolytic capacitor that includes an aluminum metallic body having an aluminum core layer. An upper oxide film and a lower oxide film respectively having fine holes on their surfaces are respectively formed on the top and the bottom of the aluminum core layer. On side surfaces of the metallic body is a plurality of cut burrs. The upper oxide film and the lower oxide film of the metallic body are respectively separated by a separating layer to form an anode and a cathode. The insulating encapsulation structure includes an insulating cover layer enclosing an outer surface of the metallic body to cover the cut burrs. Thereby, the required chemical conversion process is reduced along with current leakage, the overall manufacturing cost is lowered, and the mechanical strength for the edge of the metallic body is reinforced.

Abstract: An insulating encapsulation structure is applied to a chip type solid electrolytic capacitor that includes an aluminum metallic body having an aluminum core layer. An upper oxide film and a lower oxide film respectively having fine holes on their surfaces are respectively formed on the top and the bottom of the aluminum core layer. On side surfaces of the metallic body is a plurality of cut burrs. The upper oxide film and the lower oxide film of the metallic body are respectively separated by a separating layer to form an anode and a cathode. The insulating encapsulation structure includes an insulating cover layer enclosing an outer surface of the metallic body to cover the cut burrs. Thereby, the required chemical conversion process is reduced along with current leakage, the overall manufacturing cost is lowered, and the mechanical strength for the edge of the metallic body is reinforced.