Abstract: A method for manufacturing a flexible panel is disclosed, which has the following steps. First, a first substrate having a plurality of functional switches or conducting lines thereon is provided. Then, a second substrate is bonded on the functional switches or conducting lines, and the first substrate is thinned to a predetermined thickness subsequently. Afterwards, a flexible third substrate is adhered on the first substrate, wherein the first substrate is sandwiched between the second substrate and the third substrate. Finally, the second substrate is removed.

Abstract: A method for manufacturing a flexible panel is disclosed, which has the following steps. First, a first substrate having a plurality of functional switches or conducting lines thereon is provided. Then, a second substrate is bonded on the functional switches or conducting lines, and the first substrate is thinned to a predetermined thickness subsequently. Afterwards, a flexible third substrate is adhered on the first substrate, wherein the first substrate is sandwiched between the second substrate and the third substrate. Finally, the second substrate is removed.

Abstract: A method for manufacturing a flexible panel is disclosed, which has the following steps. First, a first substrate having a plurality of functional switches or conducting lines thereon is provided. Then, a second substrate is bonded on the functional switches or conducting lines, and the first substrate is thinned to a predetermined thickness subsequently. Afterwards, a flexible third substrate is adhered on the first substrate, wherein the first substrate is sandwiched between the second substrate and the third substrate. Finally, the second substrate is removed.

Abstract: A method for forming a, single-crystal silicon layer on a transparent substrate. A transparent substrate having an amorphous silicon layer formed thereon and a silicon wafer having a hydrogen ion layer formed therein are provided. The silicon wafer is then reversed and laminated onto the amorphous silicon layer so that a layer of single-crystal silicon is between the hydrogen ion layer and the amorphous silicon layer. The laminated silicon wafer and the amorphous silicon layer are then subjected to laser or infrared light to cause chemical bonding of the single crystal silicon layer and the amorphous silicon layer and inducing a hydro-cracking reaction thereby separating the silicon wafer is and the transparent substrate at the hydrogen ion layer, and leaving the single-crystal silicon layer on the transparent substrate.

Abstract: A method for manufacturing a flexible panel is disclosed, which has the following steps. First, a first substrate having a plurality of functional switches or conducting lines thereon is provided. Then, a second substrate is bonded on the functional switches or conducting lines, and the first substrate is thinned to a predetermined thickness subsequently. Afterwards, a flexible third substrate is adhered on the first substrate, wherein the first substrate is sandwiched between the second substrate and the third substrate. Finally, the second substrate is removed.

Abstract: A method for forming a, single-crystal silicon layer on a transparent substrate. A transparent substrate having an amorphous silicon layer formed thereon and a silicon wafer having a hydrogen ion layer formed therein are provided. The silicon wafer is then reversed and laminated onto the amorphous silicon layer so that a layer of single-crystal silicon is between the hydrogen ion layer and the amorphous silicon layer. The laminated silicon wafer and the amorphous silicon layer are then subjected to laser or infrared light to cause chemical bonding of the single crystal silicon layer and the amorphous silicon layer and inducing a hydro-cracking reaction thereby separating the silicon wafer is and the transparent substrate at the hydrogen ion layer, and leaving the single-crystal silicon layer on the transparent substrate.

Abstract: A method for laminating a material layer onto a transparent substrate. The method includes the steps of: providing a transparent substrate having an amorphous silicon layer formed thereon; forming an infrared absorbent metal layer on the material layer; inverting the material layer to laminate the metal layer onto the amorphous silicon layer; and exposing the metal layer and the amorphous silicon layer to infrared light to cause a metal silicide producing reaction and thus laminate the material layer and the transparent substrate.

Abstract: A method for producing plastic active panel displays. The method comprises: providing a glass substrate, followed by the formation of a sacrificial layer on top of the glass substrate, forming thin film transistor (TFT) on the sacrificial layer, forming a display material on the TFT, subjecting the glass substrate to laser so that the glass substrate and the sacrificial layer are detached from the TFT, thereby exposing the TFT, and attaching a plastic substrate to the TFT.

Abstract: A method of forming a flexible thin film transistor (TFT) display device. A metal foil serving as a flexible metal substrate of a display device is provided, wherein the metal foil is an aluminum alloy foil, a titanium foil or a titanium alloy foil. The thickness of the metal foil is 0.05˜0.8 mm. An insulation layer is formed on the flexible metal substrate. A thin film transistor (TFT) array is formed on the insulation layer. In addition, the aluminum alloy foil can include magnesium of 0.01˜1% wt and/or silicon of 0.01˜1% wt and the titanium alloy foil can include aluminum of 0.01˜20% wt and/or molybdenum of 0.01˜20% wt.

Abstract: A method for forming a dielectric-constant-enhanced capacitor is provided. A wafer in a reaction chamber is provided, wherein said wafer comprises a first conductive layer. Then, a first dielectric layer is formed above said first conductive layer to prevent said first conductive layer from growing silicon oxide and to diminish leakage current. Next a precursor is transmitted to a vaporizer. Then said precursor is transformed to a gas and said gas is transmitted to said reaction chamber. Next, a second dielectric layer is deposited above said first dielectric layer. Then a heat treatment is proceeded and a second conductive layer is formed on said second dielectric layer.

Abstract: A method of forming a thin film transistor (TFT) on a plastic sheet. An etching stop layer is formed on a glass substrate. A buffer layer is formed on the etching stop layer. At least one TFT structure is formed on part of the buffer layer. A passivation layer is formed on the TFT structure and the buffer layer. A plastic layer is formed on the passivation layer. The glass substrate and the etching stop layer are removed. Thus, the invention can transfer the TFT structure from the glass plate to the plastic sheet without damage from the process temperature of the TFT.

Abstract: This specification discloses a metal electrode that uses MoW (molybdenum-tungsten) alloy as its barrier layers and the method for making the same. Using MoW alloy as the barrier layer of a metal electrode can effectively solve the spiking and hillock problems occurred in aluminum electrodes. The MoW alloy barrier layer is thermally stable, preventing the resistance from rising due to the high-temperature manufacturing process. The metal electrode using the MoW alloy as the barrier layer can be prepared using the dry etching process. The resulting resistance is lower than other kinds of barrier layers. The MoW alloy barrier layer can be used in TFT metal electrodes for high-resolution and large-area displays.

Abstract: Within a method for fabricating a capacitor structure and a capacitor structure fabricated employing the method, there is provided a conductor barrier layer formed upon an upper capacitor plate formed within the capacitor structure. There is also provided a silicon layer formed upon the conductor barrier layer. The conductor barrier layer and the silicon layer provide for enhanced interdiffusion stability and enhanced delamination stability with respect to the upper capacitor plate, and thus enhanced reliability and performance of the capacitor structure.

Abstract: Within a method for fabricating a capacitor structure and a capacitor structure fabricated employing the method, there is provided a conductor barrier layer formed upon an upper capacitor plate formed within the capacitor structure. There is also provided a silicon layer formed upon the conductor barrier layer. The conductor barrier layer and the silicon layer provide for enhanced interdiffusion stability and enhanced delamination stability with respect to the upper capacitor plate, and thus enhanced reliability and performance of the capacitor structure.

Abstract: Within both a method for forming a capacitor and a capacitor formed employing the method, there is employed for forming at least part of at least one of a first capacitor plate and a second capacitor plate a tungsten rich tungsten oxide material having a tungsten:oxygen atomic ratio of from about 5:1 to about 1:1. By forming the at least part of the at least one of the first capacitor plate and the second capacitor plate of the foregoing tungsten rich tungsten oxide material, the capacitor is formed with attenuated leakage current density.