Abstract: An object of the present invention is to provide a pharmaceutical agent for the treatment and/or prophylaxis of pediatric osteoporosis without causing bone growth disorder in a subject to be medicated. A pharmaceutical composition for the treatment and/or prophylaxis of pediatric osteoporosis contains an antibody or a functional fragment thereof which binds to Siglec-15 and has activity of suppressing formation of osteoclasts and/or bone resorption by osteoclasts.

Abstract: Disclosed is a viewing apparatus including a transmission unit having light transparency, through which an image is viewed, the viewing apparatus comprising: an identification information obtaining unit which obtains identification information to identify a user of the viewing apparatus; and a processor which performs: authentication processing which authenticates the user based on the identification information; judgment processing which judges whether a hidden image included in advance in the image can be viewed or not, based on a result of the authentication processing; and adjustment processing which adjusts light passing through the transmission unit to switch whether the hidden image can be viewed or not, based on a result of the judgment processing.

Abstract: A wavelength monitor monolithically integrated with a tunable LD is disclosed. The wavelength monitor includes at least two filters, each filter having a different periodic transmission spectrum. A transmittance of the first filter, and another transmittance of the second filter at a grid wavelength attributed to a WDM system forms a combination which is specific to the grid wavelength but different from other combinations at other grid wavelengths.

Abstract: A semiconductor optical modulator includes optical input and output portions; a plurality of Mach-Zehnder modulators, each including first and second waveguide arms having first and second modulation electrodes, respectively; an optical demultiplexer coupled between the optical input portion and the Mach-Zehnder modulators through an optical waveguide; an optical multiplexer coupled between the optical output portion and the Mach-Zehnder modulators; a plurality of electrical inputs; and a plurality of differential transmission lines electrically connecting the electrical inputs to the Mach-Zehnder modulators. The first modulation electrode and the second modulation electrode of at least one of the Mach-Zehnder modulators, one of the electrical inputs, and one of the differential transmission lines that connects such one electrical input to such one Mach-Zehnder modulator form an electrical circuit having a differential impedance in a range of 80? to 95?.

Abstract: A semiconductor optical modulator includes optical input and output portions; a plurality of Mach-Zehnder modulators including first and second waveguide arms having first and second modulation electrodes, respectively; an optical demultiplexer coupled between the optical input portion and the Mach-Zehnder modulator through an optical waveguide; an optical multiplexer coupled between the optical output portion and the Mach-Zehnder modulator; a plurality of electrical inputs including first, second, and common electrodes disposed between the first and second electrodes; and a plurality of differential transmission lines electrically connecting the electrical inputs to the Mach-Zehnder modulators. The Mach-Zehnder modulators, the optical demultiplexer, the optical multiplexer, the electrical inputs, and the differential transmission lines are disposed on a single substrate.

Abstract: A semiconductor laser includes a gain region; a distributed Bragg reflector (DBR) region including a diffraction grating; an end facet facing the DBR region with the gain region arranged therebetween; a first ring resonator including a first ring-like waveguide and a first optical coupler; a second ring resonator including a second ring-like waveguide and a second optical coupler; and an optical waveguide that is optically coupled to the end facet and extending in a predetermined optical-axis direction. The first and second ring resonators are optically coupled to the optical waveguide through the first and second optical couplers, respectively. Also, the DBR region, the gain region, and the end facet constitute a laser cavity. Further, the first ring resonator has a free spectral range different from a free spectral range of the second ring resonator.

Abstract: A method for making a polarization rotator includes the steps of forming a structure including a semiconductor substrate and a mesa part, forming a first semiconductor layer on a main surface of the semiconductor substrate and around the mesa part, forming a second semiconductor layer on the first semiconductor layer, forming a semiconductor laminate by forming a third semiconductor layer on the second semiconductor layer, forming a mask layer on the third semiconductor layer, forming a mesa including a first semiconductor core by etching the semiconductor laminate, and forming a first semiconductor cladding by forming a fourth semiconductor layer around the mesa. The first semiconductor core and the first semiconductor cladding form a polarization rotating unit. An inclined surface of a mesa-part-adjacent portion extends in a second direction forming an acute angle with the main surface. An inclined portion of the second semiconductor layer extends in the second direction.

Abstract: A semiconductor laser according to the present invention includes a first reflective region and a second reflective region disposed opposite to the first reflective region in a predetermined direction of an optical axis. The first reflective region has a plurality of gain waveguides each including an active layer and a plurality of refractive-index controlling waveguides each having a first diffraction grating formed therein. The gain waveguides and the refractive-index controlling waveguides are alternately arranged at a predetermined pitch in the direction of the optical axis. The second reflective region has a second diffraction grating.

Abstract: A wavelength monitor monolithically integrated with a tunable LD is disclosed. The wavelength monitor includes at least two filters, each having a periodic transmission sptectrum but a period between nearest neighbor periods is different from the other. A transmittance of the first filter and another transmittance of the second filter at a grid wavelength attributed to the WDM system forms a combination which is specific to the grid wavelength bur different from other combinations at other grid wavelengths.

Abstract: A semiconductor laser includes a light emission end facet; a first optical waveguide extending in a predetermined optical-axis direction, the first optical waveguide being optically coupled to the light emission end facet; a ring resonator having a plurality of periodic transmittance peak wavelengths, the ring resonator being optically coupled to the first optical waveguide; a plurality of gain waveguides that generate light by injection of current; an optical coupler portion that optically couples the first optical waveguide to each of the plurality of gain waveguides; and a plurality of second optical waveguides including diffraction gratings, the plurality of second optical waveguides being respectively optically coupled to the plurality of gain waveguides. Also, each of the diffraction gratings in the plurality of second optical waveguides has a different reflection band.

Abstract: A wavelength monitor monolithically integrated with a tunable LD is disclosed. The wavelength monitor includes at least two filters, each having a periodic transmission spectrum but a period between nearest neighbor periods is different from the other. A transmittance of the first filter and another transmittance of the second filter at a grid wavelength attributed to the WDM system forms a combination which is specific to the grid wavelength bur different from other combinations at other grid wavelengths.

Abstract: A semiconductor optical modulation device includes a substrate; a first semiconductor cladding layer of a first conductivity type disposed on the substrate; an optical waveguide layer disposed on the first semiconductor cladding layer, the optical waveguide layer including a first semiconductor optical confinement layer, a second semiconductor optical confinement layer, and an insulating layer disposed between the first semiconductor optical confinement layer and the second semiconductor optical confinement layer, the insulating layer being made of aluminum oxide; a second semiconductor cladding layer of a second conductivity type disposed on the optical waveguide layer; a first electrode electrically connected to the first semiconductor cladding layer; and a second electrode electrically connected to the second semiconductor cladding layer.

Abstract: A method for making a polarization rotator includes the steps of forming a structure including a semiconductor substrate and a mesa part, forming a first semiconductor layer on a main surface of the semiconductor substrate and around the mesa part, forming a second semiconductor layer on the first semiconductor layer, forming a semiconductor laminate by forming a third semiconductor layer on the second semiconductor layer, forming a mask layer on the third semiconductor layer, forming a mesa including a first semiconductor core by etching the semiconductor laminate, and forming a first semiconductor cladding by forming a fourth semiconductor layer around the mesa. The first semiconductor core and the first semiconductor cladding form a polarization rotating unit. An inclined surface of a mesa-part-adjacent portion extends in a second direction forming an acute angle with the main surface. An inclined portion of the second semiconductor layer extends in the second direction.

Abstract: Disclosed is a viewing apparatus including a transmission unit having light transparency, through which an image is viewed, the viewing apparatus comprising: an identification information obtaining unit which obtains identification information to identify a user of the viewing apparatus; and a processor which performs: authentication processing which authenticates the user based on the identification information; judgment processing which judges whether a hidden image included in advance in the image can be viewed or not, based on a result of the authentication processing; and adjustment processing which adjusts light passing through the transmission unit to switch whether the hidden image can be viewed or not, based on a result of the judgment processing.

Abstract: A semiconductor laser includes a semiconductor laser region and a wavelength-monitoring region. The semiconductor laser region includes a first optical waveguide that includes a gain waveguide, the first optical waveguide having one end and another end opposite the one end. The wavelength-monitoring region includes a second optical waveguide that is optically coupled to the first optical waveguide with the one end therebetween, and a photodiode structure that is optically coupled to the second optical waveguide. In the wavelength-monitoring region, the second optical waveguide is branched into three or more optical waveguides, and at least two optical waveguides among the three or more optical waveguides form first ring resonators having optical path lengths different from each other.

Abstract: A semiconductor laser device includes a laser diode provided on a semiconductor substrate, the laser diode including a first optical waveguide having a gain waveguide, a plurality of photodiodes, a first wavelength-selective filter having periodic transmission peaks, and a second wavelength-selective filter having periodic transmission peaks, the period of the transmission peaks of the second wavelength-selective filter being different from the period of the transmission peaks of the first wavelength-selective filter. Furthermore, two photodiodes among the plurality of photodiodes are optically coupled to the first optical waveguide through the first and second wavelength-selective filters, respectively.

Abstract: A semiconductor optical modulation device includes a substrate; a first semiconductor cladding layer of a first conductivity type disposed on the substrate; an optical waveguide layer disposed on the first semiconductor cladding layer, the optical waveguide layer including a first semiconductor optical confinement layer, a second semiconductor optical confinement layer, and an insulating layer disposed between the first semiconductor optical confinement layer and the second semiconductor optical confinement layer, the insulating layer being made of aluminum oxide; a second semiconductor cladding layer of a second conductivity type disposed on the optical waveguide layer; a first electrode electrically connected to the first semiconductor cladding layer; and a second electrode electrically connected to the second semiconductor cladding layer.

Abstract: A semiconductor laser includes a light emission end facet; a first optical waveguide extending in a predetermined optical-axis direction, the first optical waveguide being optically coupled to the light emission end facet; a ring resonator having a plurality of periodic transmittance peak wavelengths, the ring resonator being optically coupled to the first optical waveguide; a plurality of gain waveguides that generate light by injection of current; an optical coupler portion that optically couples the first optical waveguide to each of the plurality of gain waveguides; and a plurality of second optical waveguides including diffraction gratings, the plurality of second optical waveguides being respectively optically coupled to the plurality of gain waveguides. Also, each of the diffraction gratings in the plurality of second optical waveguides has a different reflection band.

Abstract: A semiconductor laser includes a gain region; a distributed Bragg reflector (DBR) region including a diffraction grating; an end facet facing the DBR region with the gain region arranged therebetween; a first ring resonator including a first ring-like waveguide and a first optical coupler; a second ring resonator including a second ring-like waveguide and a second optical coupler; and an optical waveguide that is optically coupled to the end facet and extending in a predetermined optical-axis direction. The first and second ring resonators are optically coupled to the optical waveguide through the first and second optical couplers, respectively. Also, the DBR region, the gain region, and the end facet constitute a laser cavity. Further, the first ring resonator has a free spectral range different from a free spectral range of the second ring resonator.