Abstract: To provide an imaging device that can suppress color mixing between pixels. An imaging device includes a first semiconductor substrate having a plurality of photoelectric conversion elements, a lens body provided on one surface side of the first semiconductor substrate, and a wiring layer provided on an opposite side of the one surface of the first semiconductor substrate. The first semiconductor substrate includes an inter-element isolation part disposed between one photoelectric conversion element and another photoelectric conversion element adjacent to each other among the plurality of photoelectric conversion elements. The wiring layer includes a first isolation part disposed at a position facing the inter-element isolation part. The first isolation part includes a first low refractive index region and a first high refractive index region in contact with the first low refractive index region. The first high refractive index region sandwiches the first low refractive index region from both sides.

Abstract: A solid-state image capturing apparatus includes a plurality of pixel sections, a vertical transfer section, and a horizontal transfer section, wherein the horizontal transfer section includes a plurality of transfer gates consecutively arranged in a horizontal direction and a signal wiring for supplying a driving signal to the transfer gates, and wherein a layout pattern of at least one layer of constituent members which constitute the horizontal transfer section is a pattern in which the transfer gates and the signal wiring are connected so that electric charge transfer directions become opposite from each other on both sides of a branching position in the horizontal transfer section.

Abstract: A solid-state image capturing apparatus includes a plurality of pixel sections, a vertical transfer section, and a horizontal transfer section, wherein the horizontal transfer section includes a plurality of transfer gates consecutively arranged in a horizontal direction and a signal wiring for supplying a driving signal to the transfer gates, and wherein a layout pattern of at least one layer of constituent members which constitute the horizontal transfer section is a pattern in which the transfer gates and the signal wiring are connected so that electric charge transfer directions become opposite from each other on both sides of a branching position in the horizontal transfer section.