Abstract: A semiconductor structure having a Si substrate heterointegrated with GaN and a method for fabricating the same is disclosed. The method uses a (100) silicon substrate to fabricate a hundred nanometer scale hole and uses wet etching to etch the silicon substrate, thereby exposing the (111) crystal surface of the silicon substrate. The (111) crystal surface is used as a nucleating crystal surface of an AlN buffer layer and GaN. When GaN is grown, silane is reacted with GaN to adjust the concentration of doping silicon atoms into GaN, thereby forming a semiconductor structure having a Si substrate heterointegrated with GaN.

Abstract: A silicon metal-oxide-semiconductor field effect transistor with a wide-bandgap III-V compound semiconductor drain and a method for fabricating the same are disclosed. The method fabricates a hundred nanometer-scale hole in a (100) silicon substrate to expose the (111) facet of the silicon substrate, which favors to use selective area growth to form lattice matched III-V materials with high quality.

Abstract: A silicon metal-oxide-semiconductor field effect transistor with a wide-bandgap III-V compound semiconductor drain and a method for fabricating the same are disclosed. The method fabricates a hundred nanometer-scale hole in a (100) silicon substrate to expose the (111) facet of the silicon substrate, which favors to use selective area growth to form lattice matched III-V materials with high quality.

Abstract: A semiconductor structure having a Si substrate heterointegrated with GaN and a method for fabricating the same is disclosed. The method uses a (100) silicon substrate to fabricate a hundred nanometer scale hole and uses wet etching to etch the silicon substrate, thereby exposing the (111) crystal surface of the silicon substrate. The (111) crystal surface is used as a nucleating crystal surface of an AlN buffer layer and GaN. When GaN is grown, silane is reacted with GaN to adjust the concentration of doping silicon atoms into GaN, thereby forming a semiconductor structure having a Si substrate heterointegrated with GaN.

Abstract: A semiconductor structure having a Si substrate heterointegrated with GaN and a method for fabricating the same is disclosed. The method uses a (100) silicon substrate to fabricate a hundred nanometer scale hole and uses wet etching to etch the silicon substrate, thereby exposing the (111) crystal surface of the silicon substrate. The (111) crystal surface is used as a nucleating crystal surface of an AlN buffer layer and GaN. When GaN is grown, silane is reacted with GaN to adjust the concentration of doping silicon atoms into GaN, thereby forming a semiconductor structure having a Si substrate heterointegrated with GaN.