Abstract: A method of selectively removing aluminium oxide or nitride material from a microelectronic substrate, the method comprising contacting the material with an aqueous etching composition comprising: an etchant comprising a source of fluoride; and a metal corrosion inhibitor; wherein the composition has a pH in the range of from 3 to 8. Aqueous etching compositions and uses are also described.

Abstract: The disclosure relates to a cleaning composition that aids in the removal of post-etch residues and aluminum-containing material, e.g., aluminum oxide, in the production of semiconductors that utilize an aluminum-containing etch stop layer. The compositions have a high selectivity for post-etch residue and aluminum-containing materials relative to low-k dielectric materials, cobalt-containing materials and other metals on the microelectronic device.

Abstract: A method of selectively removing aluminium oxide or nitride material from a microelectronic substrate, the method comprising contacting the material with an aqueous etching composition comprising: an etchant comprising a source of fluoride; and a metal corrosion inhibitor; wherein the composition has a pH in the range of from 3 to 8. Aqueous etching compositions and uses are also described.

Abstract: Semi-aqueous compositions useful for the selective removal of titanium nitride and/or photoresist etch residue materials relative to metal conducting, e.g., tungsten and copper, and insulating materials from a microelectronic device having same thereon. The semi-aqueous compositions contain at least one oxidant, at least one etchant, and at least one organic solvent, may contain various corrosion inhibitors to ensure selectivity.

Abstract: Compositions useful for the selective removal of titanium nitride and/or photoresist etch residue materials relative to insulating materials from a microelectronic device having same thereon. The removal compositions contain at least one oxidant, one etchant, and one activator to enhance the etch rate of titanium nitride.

Abstract: The disclosure relates to a cleaning composition that aids in the removal of post-etch residues and aluminum-containing material, e.g., aluminum oxide, in the production of semiconductors that utilize an aluminum-containing etch stop layer. The compositions have a high selectivity for post-etch residue and aluminum-containing materials relative to low-k dielectric materials, cobalt-containing materials and other metals on the microelectronic device.

Abstract: Compositions useful for the selective removal of titanium nitride and/or photoresist etch residue materials relative to insulating materials from a microelectronic device having same thereon. The removal compositions contain at least one oxidant, one etchant, and one activator to enhance the etch rate of titanium nitride.

Abstract: Semi-aqueous compositions useful for the selective removal of titanium nitride and/or photoresist etch residue materials relative to metal conducting, e.g., tungsten and copper, and insulating materials from a microelectronic device having same thereon. The semi-aqueous compositions contain at least one oxidant, at least one etchant, and at least one organic solvent, may contain various corrosion inhibitors to ensure selectivity.

Abstract: A cleaning method following an opening etching is provided. First, a semiconductor substrate having a dielectric layer is provided. The hard mask layer includes at least a metal layer. The opening etch is then carried out to form at least an opening in the dielectric layer. A nitrogen (N2) treatment process is performed to clean polymer residues having carbon-fluorine (C—F) bonds remained in the opening. Finally, a wet cleaning process is performed.

Abstract: A patterning method is provided. A patterned photoresist layer is formed on a bottom anti-reflective coating (BARC), having therein an opening exposing a portion of the BARC. The patterned photoresist layer is treated with a first plasma-generating gas including a fluorocarbon species to form a polymer layer on the surface of the PR layer and the sidewall of the opening. The patterned photoresist layer is used as a mask to etch the BARC with a second plasma-generating gas, which includes Ar and H2 but no fluorocarbon species or oxygen-containing species, to remove the exposed portion of the BARC.

Abstract: A cleaning method following an opening etching is provided. First, a semiconductor substrate having a dielectric layer is provided. The hard mask layer includes at least a metal layer. The opening etch is then carried out to form at least an opening in the dielectric layer. A nitrogen (N2) treatment process is performed to clean polymer residues having carbon-fluorine (C—F) bonds remained in the opening. Finally, a wet cleaning process is performed.

Abstract: An HCG to HDL translation method, which can automatically generate VHDL codes. The method reads a hardware component graph (HCG) to find a start node and obtain a corresponding hardware component subgraph of the start node, analyzes all information of the start node to thereby add input and output components and generate a VHDL entity, determines types on all nodes of the hardware component, graph to thereby generate corresponding VHDL components and write associated information in a VHDL architecture, generates corresponding signal connections of VHDL components in accordance with edges of the hardware component graph, and outputs the VHDL entity and architecture to a file in a text form.

Abstract: A process of automatically translating a high level programming language into a hardware description language (HDL), which can use a three-stage translation mechanism to generate the HDL codes corresponding to the functions described by the high level programming language. The first stage translates source codes coded by the high level programming language into an extended activity diagram (EAD). The second stage translates the EAD into a hardware component graph (HCG). The third stage generates the respective signal connections of HDL components according to all edges of the HCG, and outputs an HDL entity and architecture to a file in a string form, thereby completing the entire translation.

Abstract: An HCG to HDL translation method, which can automatically generate VHDL codes. The method reads a hardware component graph (HCG) to find a start node and obtain a corresponding hardware component subgraph of the start node, analyzes all information of the start node to thereby add input and output components and generate a VHDL entity, determines types on all nodes of the hardware component, graph to thereby generate corresponding VHDL components and write associated information in a VHDL architecture, generates corresponding signal connections of VHDL components in accordance with edges of the hardware component graph, and outputs the VHDL entity and architecture to a file in a text form.