Patents by Inventor Chieh-Yin Chen

Chieh-Yin Chen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240120388
    Abstract: Provided are structures and methods for forming structures with sloping surfaces of a desired profile. An exemplary method includes performing a first etch process to differentially etch a gate material to a recessed surface, wherein the recessed surface includes a first horn at a first edge, a second horn at a second edge, and a valley located between the first horn and the second horn; depositing an etch-retarding layer over the recessed surface, wherein the etch-retarding layer has a central region over the valley and has edge regions over the horns, and wherein the central region of the etch-retarding layer is thicker than the edge regions of the etch-retarding layer; and performing a second etch process to recess the horns to establish the gate material with a desired profile.
    Type: Application
    Filed: January 18, 2023
    Publication date: April 11, 2024
    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Li-Wei Yin, Tzu-Wen Pan, Yu-Hsien Lin, Jih-Sheng Yang, Shih-Chieh Chao, Chia Ming Liang, Yih-Ann Lin, Ryan Chia-Jen Chen
  • Publication number: 20240096630
    Abstract: Disclosed is a semiconductor fabrication method. The method includes forming a gate stack in an area previously occupied by a dummy gate structure; forming a first metal cap layer over the gate stack; forming a first dielectric cap layer over the first metal cap layer; selectively removing a portion of the gate stack and the first metal cap layer while leaving a sidewall portion of the first metal cap layer that extends along a sidewall of the first dielectric cap layer; forming a second metal cap layer over the gate stack and the first metal cap layer wherein a sidewall portion of the second metal cap layer extends further along a sidewall of the first dielectric cap layer; forming a second dielectric cap layer over the second metal cap layer; and flattening a top layer of the first dielectric cap layer and the second dielectric cap layer using planarization operations.
    Type: Application
    Filed: January 12, 2023
    Publication date: March 21, 2024
    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Li-Wei Yin, Tzu-Wen Pan, Yu-Hsien Lin, Yu-Shih Wang, Jih-Sheng Yang, Shih-Chieh Chao, Yih-Ann Lin, Ryan Chia-Jen Chen
  • Patent number: 8791156
    Abstract: A polyacetylenes and application thereof. The polyacetylenes is isolated from an extract of the sporophores of Antrodia Cinnamomea and has a function of inhibiting the production of nitric oxide. Therefore, the polyacetylenes can be used for preparing a pharmaceutical composition for anti-inflammation. The present invention also teaches the representative metabolites of the sporophores of Antrodia Cinnamomea, which can be used to evaluate the quality thereof.
    Type: Grant
    Filed: December 12, 2011
    Date of Patent: July 29, 2014
    Inventors: Sheng-Yang Wang, Ting-Yu Lin, Chieh-Yin Chen, Shih-Chang Chien, Wen-Wei Hsiao, Fang-Hua Chu, Wen-Hsiung Li, Jei-Fu Shaw, Chin-Chung Lin