Patents by Inventor Chiemi Sawaumi

Chiemi Sawaumi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 7002396
    Abstract: A frequency converter includes a transistor pair having a first transistor and a second transistor respectively having collector terminals commonly connected to each other and emitter terminals commonly connected to each other, the commonly-connected collector terminals of the transistor pair being connected to a power supply terminal by way of a first resistor, a third transistor having a collector terminal connected to the power supply terminal by way of a second resistor and an emitter terminal connected to the commonly-connected emitter terminals of the transistor pair, a third resistor having an end connected to the commonly-connected emitter terminals of the transistor pair, and another end grounded by way of a constant current source, and an output terminal connected to the commonly-connected collector terminals of the transistor pair.
    Type: Grant
    Filed: March 15, 2002
    Date of Patent: February 21, 2006
    Assignee: Mitsubishi Denki Kabushiki Kaisha
    Inventors: Eiji Taniguchi, Chiemi Sawaumi, Noriharu Suematsu, Kenichi Maeda, Takayuki Ikushima, Hiroyuki Joba, Yoshinori Takahashi
  • Publication number: 20040170032
    Abstract: A frequency converter includes a transistor pair having a first transistor and a second transistor respectively having collector terminals commonly connected to each other and emitter terminals commonly connected to each other, the commonly-connected collector terminals of the transistor pair being connected to a power supply terminal by way of a first resistor, a third transistor having a collector terminal connected to the power supply terminal by way of a second resistor and an emitter terminal connected to the commonly-connected emitter terminals of the transistor pair, a third resistor having an end connected to the commonly-connected emitter terminals of the transistor pair, and another end grounded by way of a constant current source, and an output terminal connected to the commonly-connected collector terminals of the transistor pair.
    Type: Application
    Filed: December 31, 2003
    Publication date: September 2, 2004
    Inventors: Eiji Taniguchi, Chiemi Sawaumi, Noriharu Suematsu, Kenichi Maeda, Takayuki Ikushima, Hiroyuki Joba, Yoshinori Takahashi
  • Patent number: 6784743
    Abstract: A high frequency amplifier in which a common emitter bipolar transistor is used, and in that a constant current source and a constant voltage source are switched to apply a DC bias to a base terminal of the bipolar transistor in accordance with a power level of a high frequency signal input to the bipolar transistor or a power level of a high frequency signal output therefrom, and a frequency mixer in that a DC bias is applied to a base of at least one of a bipolar transistor for the input of a high frequency signal and a bipolar transistor for the input of a local oscillation wave by using a configuration for applying the DC bias to a base of an amplifying bipolar transistor employed in the high frequency amplifier.
    Type: Grant
    Filed: July 30, 2002
    Date of Patent: August 31, 2004
    Assignee: Mitsubishi Denki Kabushiki Kaisha
    Inventors: Eiji Taniguchi, Noriharu Suematsu, Chiemi Sawaumi, Kenichi Maeda, Takayuki Ikushima, Hiroyuki Joba, Tadashi Takagi
  • Publication number: 20030001677
    Abstract: A high frequency amplifier in which a common emitter bipolar transistor is used, and in that a constant current source and a constant voltage source are switched to apply a DC bias to a base terminal of the bipolar transistor in accordance with a power level of a high frequency signal input to the bipolar transistor or a power level of a high frequency signal output therefrom, and a frequency mixer in that a DC bias is applied to a base of at least one of a bipolar transistor for the input of a high frequency signal and a bipolar transistor for the input of a local oscillation wave by using a configuration for applying the DC bias to a base of an amplifying bipolar transistor employed in the high frequency amplifier.
    Type: Application
    Filed: July 30, 2002
    Publication date: January 2, 2003
    Inventors: Eiji Taniguchi, Noriharu Suematsu, Chiemi Sawaumi, Kenichi Maeda, Takayuki Ikushima, Hiroyuki Joba, Tadashi Takagi