Abstract: A device includes a semiconductor fin, and a gate stack on sidewalls and a top surface of the semiconductor fin. The gate stack includes a high-k dielectric layer, a work-function layer overlapping a bottom portion of the high-k dielectric layer, and a blocking layer overlapping a second bottom portion of the work-function layer. A low-resistance metal layer overlaps and contacts the work-function layer and the blocking layer. The low-resistance metal layer has a resistivity value lower than second resistivity values of both of the work-function layer and the blocking layer. A gate spacer contacts a sidewall of the gate stack.

Abstract: A support pillar is formed under a movable film for support. The support pillar includes a plurality of first metal micropillars, a base metal connection pillar layer and a first oxide encapsulation layer. The first metal micropillars are formed under the movable film and conductively connected to the movable film via metal connection. The base metal connection pillar layer is formed under the first metal micropillars and conductively connected to the first metal micropillars. The first oxide encapsulation layer fully or partially encapsulates the first metal micropillars to insulate the first metal micropillars from air, and shape the support pillar into a column shape.

Abstract: A support pillar is formed under a movable film for support. The support pillar includes a plurality of first metal micropillars, a base metal connection pillar layer and a first oxide encapsulation layer. The first metal micropillars are formed under the movable film and conductively connected to the movable film via metal connection. The base metal connection pillar layer is formed under the first metal micropillars and conductively connected to the first metal micropillars. The first oxide encapsulation layer fully or partially encapsulates the first metal micropillars to insulate the first metal micropillars from air, and shape the support pillar into a column shape.

Abstract: A reading stand includes a page turning mechanism which has two turning arms extending radially from a rotary shaft located adjacent to an intermediate part of a back plate member. The arms are turned from one side of the shaft to the other side so as to turn a paper sheet of a book held by the reading stand. One of the arms has a paper sheet taking member such as a suction cup and the other arm has a paper sheet pressing member. A motor with a control mechanism operates the arms.