Abstract: An image sensor includes an array of image pixels and black level correction (BLC) pixels. Each BLC pixel includes a BLC pixel photodetector, a BLC pixel sensing circuit, and a BLC pixel optics assembly configured to block light that impinges onto the BLC pixel photodetector. Each BLC pixel optics assembly may include a first portion of a layer stack including a vertically alternating sequence of first material layers having a first refractive index and second material layers having a second refractive index. Additionally or alternatively, each BLC pixel optics assembly may include a first portion of a layer stack including at least two metal layers, each having a respective wavelength sub-range having a greater reflectivity than another metal layer. Alternatively or additionally, each BLC pixel optics assembly may include an infrared blocking material layer that provides a higher absorption coefficient than color filter materials within image pixel optics assemblies.

Abstract: The present disclosure provides a semiconductor device that includes a semiconductor fin disposed over a substrate, an isolation structure at least partially surrounding the fin, an epitaxial source/drain (S/D) feature disposed over the semiconductor fin, where an extended portion of the epitaxial S/D feature extends over the isolation structure, and a silicide layer disposed on the epitaxial S/D feature, where the silicide layer covers top, bottom, sidewall, front, and back surfaces of the extended portion of the S/D feature.

Abstract: Semiconductor structures and the manufacturing method thereof are disclosed. An exemplary semiconductor structure according to the present disclosure includes a first base portion and a second base portion, an isolation feature sandwiched between the first base portion and the second base portion, a center dielectric fin over the isolation feature, a first anti-punch-through (APT) feature over the first base portion, a second APT feature over the second base portion, a first stack of channel members over the first APT feature, and a second stack of channel members over the second APT feature. The center dielectric fin is sandwiched between the first stack of channel members and the second stack of channel members as well as between the first APT feature and the second APT feature.

Abstract: A level shifter can achieve a level shift by a wide margin. The level shifter includes a latch circuit, a protection circuit, and an input circuit. The latch circuit is coupled between a high-voltage terminal and the protection circuit. The protection circuit including a first protection transistor pair and a second protection transistor pair is set between the latch circuit and the input circuit, and is configured to prevent an excessive voltage drop between the input circuit and a pair of output terminals, wherein the pair of output terminals is set between the first and the second protection transistor pairs and used for outputting a pair of output signals. The input circuit includes an input transistor pair coupled between the second protection transistor pair and a low-voltage terminal and configured to operate according to a pair of input signals.

Abstract: A method includes forming a dummy gate structure across a fin, in which the dummy gate structure has a dummy gate dielectric layer and a dummy gate electrode, forming gate spacers on sidewalls of the dummy gate structure, forming source/drain epitaxial structures on sides of the dummy gate structure, performing a first etch process to the dummy gate electrode such that a recessed dummy gate electrode remains over the fin, performing a second etch process to the gate spacers such that recessed gate spacers remain over the sidewalls of the dummy gate structure, removing the recessed dummy gate electrode and the dummy gate dielectric layer after the second etch process to form a recess between the recessed gate spacers, forming a gate structure overfilling the recess, and performing a third etch process to the gate structure such that a recessed gate structure remains between the recessed gate spacers.

Abstract: An acoustic device includes a first sound producing component and a back cavity structure. The first sound producing component has a first front side and a first back side, wherein the first sound producing component is a high frequency sound unit, and the first front side faces a sound propagating opening of the acoustic device. The back cavity structure is connected to the first back side of the first sound producing component. The first sound producing component produces a first acoustic wave from the first front side towards the sound propagating opening, and the first sound producing component produces a second acoustic wave from the first back side towards a back cavity of the back cavity structure. The back cavity structure is configured to flatten a peak or a dip of a frequency response of the first sound producing component.

Abstract: A circuit board structure includes a first sub-circuit board, a second sub-circuit board, and a third sub-circuit board. The first sub-circuit board has an upper surface and a lower surface opposite to each other, and includes at least one first conductive through hole. The second sub-circuit board is disposed on the upper surface of the first sub-circuit board and includes at least one second conductive through hole. The third sub-circuit board is disposed on the lower surface of the first sub-circuit board and includes at least one third conductive through hole. At least two of the first conductive through hole, the second conductive through hole, and the third conductive through hole are alternately arranged in an axial direction perpendicular to an extending direction of the first sub-circuit board. The first, second and third sub-circuit boards are electrically connected to one another.

Abstract: A method of operating a memory device is provided. A clock signal is received. Each clock cycle of the clock signal initiates a write operation or a read operation in a memory device. A power nap period is then determined. The power nap period is compared with a clock cycle period to determine that the power nap period is less than the clock cycle period of the clock signal. A header control signal is generated in response to determining that the power nap period is less than the clock cycle period. The header control signal turns off a header of a component of the memory device.

Abstract: A semiconductor device structure, along with methods of forming such, are described. The method includes forming a first dielectric feature between first and the second fin structures, wherein each first and second fin structure includes first semiconductor layers and second semiconductor layers alternatingly stacked and in contact with the first dielectric layer. The method also includes removing the second semiconductor layers so that the first semiconductor layers of the first and second fin structures extend laterally from a first side and a second side of the first dielectric feature, respectively, trimming the first dielectric feature so that the first dielectric feature has a reduced thickness on both first and the second sides, and forming a gate electrode layer to surround each of the first semiconductor layers of the first and second fin structures.

Abstract: A chemical mechanical planarization (CMP) system including a capacitive deionization module (CDM) for removing ions from a solution and a method for using the same are disclosed. In an embodiment, an apparatus includes a planarization unit for planarizing a wafer; a cleaning unit for cleaning the wafer; a wafer transportation unit for transporting the wafer between the planarization unit and the cleaning unit; and a capacitive deionization module for removing ions from a solution used in at least one of the planarization unit or the cleaning unit.

Abstract: A user equipment (UE) includes one or more non-transitory computer-readable media containing computer-executable instructions embodied therein, and at least one processor coupled to the one or more non-transitory computer-readable media. The at least one processor configured to execute the computer-executable instructions to receive downlink control information (DCI) on a downlink (DL) channel of a non-terrestrial network (NTN), the DL channel reception ending in a first slot, and transmit an uplink (UL) transmission on a UL channel of the NTN in a second slot. The second slot is separate from the first slot by a timing offset, where a duration of the timing offset is dependent on a type of the UL transmission and a numerology of the UL transmission.

Abstract: A sensor package structure includes a substrate, a sensor chip and a ring-shaped solder mask frame those are disposed on the substrate, a ring-shaped support disposed on a top side of the annular solder mask frame, and a light permeable member that is disposed on the ring-shaped support. The sensor chip is electrically coupled to the substrate. A top surface of the sensor chip has a sensing region, and the sensing region is spaced apart from an outer lateral side of the sensor chip by a distance less than 300 ?m. The ring-shaped solder mask frame surrounds and contacts the outer lateral side of the sensor chip. The light permeable member, the ring-shaped support, and the sensor chip jointly define an enclosed space.

Abstract: An augmented reality (AR) display is provided. The display comprises a light field generator and a birdbath eyepiece. The light field generator generates a light field as an output. The birdbath eyepiece connects to the light field generator for receiving and projecting the light field to human eye. The birdbath eyepiece comprises a beam splitter and a combiner. The combiner has a curved surface. Each beam of the light field is split into two beams by the beam splitter with one of the split beams reflected by the combiner. Three states-of-use of the birdbath eyepiece are provided for the near-eye light field AR display to transmit the light field to the human eye. A low f-number (or focal ratio) and a large eyebox are obtained to effectively expand the field of view and increase the volume of space within which the human eye can receive the light field.

Abstract: A guest assistance platform may analyze video data of an environment that includes a liquid substance. The video data is analyzed using a machine learning model trained to detect objects in the liquid substance. The guest assistance platform may detect an individual in the liquid substance based on analyzing the video data and may determine a measure of confidence associated with detecting the individual in the liquid substance. The guest assistance platform may determine one or more confidence factors associated with detecting the individual in the liquid substance. The guest assistance platform may modify the measure of confidence using the one or more confidence factors and may determine whether the modified measure of confidence satisfies a confidence threshold. The guest assistance platform may selectively cause assistance to be provided to the individual or continue analyzing the video data based on whether the modified measure of confidence satisfies the confidence threshold.

Abstract: A transmitter circuit is provided. The transmitter circuit has a first transmission node and a second transmission node and includes a first resistor, a second resistor, a third resistor, a fourth resistor, and a driving circuit. The driving circuit includes a first transistor group, a second transistor group, a third transistor group, and a fourth transistor group. The first resistor is coupled between a first output terminal and the first transmission node. The second resistor is coupled between a second output terminal and the second transmission node. The third resistor is coupled between a third output terminal and the first transmission node. The fourth resistor is coupled between a fourth output terminal and the second transmission node. The first, second, third, and fourth transistor groups are coupled to a first and a second reference voltages and electrically connected to the first, second, third, and fourth output terminals, respectively.