Patents by Inventor Chien Chi Linus TIEN

Chien Chi Linus TIEN has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Sense amplifier layout for FinFET technology
    Patent number: 11238905
    Abstract: A sense amplifier (SA) includes a semiconductor substrate having a source/drain (S/D) diffusion region; a pair of SA sensing devices both disposed in the S/D diffusion region; an SA enabling device disposed in the same S/D diffusion region as where the pair of SA sensing devices are disposed in; and a sense amplifier enabling signal (SAE) line for carrying an SAE signal, for turning on the SA enabling device to discharge one of the pair of SA sensing devices during a data read from the sense amplifier, wherein the SA enabling device is arranged to provide buffer protection for source/drain terminals of the pair of SA sensing devices.
    Type: Grant
    Filed: March 26, 2020
    Date of Patent: February 1, 2022
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Yen-Huei Chen, Chien Chi Linus Tien, Kao-Cheng Lin, Jung-Hsuan Chen
  • SENSE AMPLIFIER LAYOUT FOR FINFET TECHNOLOGY
    Publication number: 20200227095
    Abstract: A sense amplifier (SA) includes a semiconductor substrate having a source/drain (S/D) diffusion region; a pair of SA sensing devices both disposed in the S/D diffusion region; an SA enabling device disposed in the same S/D diffusion region as where the pair of SA sensing devices are disposed in; and a sense amplifier enabling signal (SAE) line for carrying an SAE signal, for turning on the SA enabling device to discharge one of the pair of SA sensing devices during a data read from the sense amplifier, wherein the SA enabling device is arranged to provide buffer protection for source/drain terminals of the pair of SA sensing devices.
    Type: Application
    Filed: March 26, 2020
    Publication date: July 16, 2020
    Inventors: Yen-Huei CHEN, Chien Chi Linus TIEN, Kao-Cheng LIN, Jung-Hsuan CHEN
  • Sense amplifier layout for FinFET technology
    Patent number: 10636458
    Abstract: A sense amplifier (SA) comprises a semiconductor substrate having an oxide definition (OD) region, a pair of SA sensing devices, a SA enabling device, and a sense amplifier enabling signal (SAE) line for carrying an SAE signal. The pair of SA sensing devices have the same poly gate length Lg as the SA enabling device, and they all share the same OD region. When enabled, the SAE signal turns on the SA enabling device to discharge one of the pair of SA sensing devices for data read from the sense amplifier.
    Type: Grant
    Filed: July 23, 2018
    Date of Patent: April 28, 2020
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Yen-Huei Chen, Chien Chi Linus Tien, Kao-Cheng Lin, Jung-Hsuan Chen
  • SENSE AMPLIFIER LAYOUT FOR FINFET TECHNOLOGY
    Publication number: 20180330765
    Abstract: A sense amplifier (SA) comprises a semiconductor substrate having an oxide definition (OD) region, a pair of SA sensing devices, a SA enabling device, and a sense amplifier enabling signal (SAE) line for carrying an SAE signal. The pair of SA sensing devices have the same poly gate length Lg as the SA enabling device, and they all share the same OD region. When enabled, the SAE signal turns on the SA enabling device to discharge one of the pair of SA sensing devices for data read from the sense amplifier.
    Type: Application
    Filed: July 23, 2018
    Publication date: November 15, 2018
    Inventors: Yen-Huei CHEN, Chien Chi Linus TIEN, Kao-Cheng LIN, Jung-Hsuan CHEN
  • Sense amplifier layout for FinFET technology
    Patent number: 10032490
    Abstract: A sense amplifier (SA) comprises a semiconductor substrate having an oxide definition (OD) region, a pair of SA sensing devices, a SA enabling device, and a sense amplifier enabling signal (SAE) line for carrying an SAE signal. The pair of SA sensing devices have the same poly gate length Lg as the SA enabling device, and they all share the same OD region. When enabled, the SAE signal turns on the SA enabling device to discharge one of the pair of SA sensing devices for data read from the sense amplifier.
    Type: Grant
    Filed: October 10, 2016
    Date of Patent: July 24, 2018
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Yen-Huei Chen, Chien Chi Linus Tien, Kao-Cheng Lin, Jung-Hsuan Chen
  • SENSE AMPLIFIER LAYOUT FOR FINFET TECHNOLOGY
    Publication number: 20170032827
    Abstract: A sense amplifier (SA) comprises a semiconductor substrate having an oxide definition (OD) region, a pair of SA sensing devices, a SA enabling device, and a sense amplifier enabling signal (SAE) line for carrying an SAE signal. The pair of SA sensing devices have the same poly gate length Lg as the SA enabling device, and they all share the same OD region. When enabled, the SAE signal turns on the SA enabling device to discharge one of the pair of SA sensing devices for data read from the sense amplifier.
    Type: Application
    Filed: October 10, 2016
    Publication date: February 2, 2017
    Inventors: Yen-Huei CHEN, Chien Chi Linus TIEN, Kao-Cheng LIN, Jung-Hsuan CHEN