Patents by Inventor Chien-Fu Liu

Chien-Fu Liu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11978740
    Abstract: A layer stack including a first bonding dielectric material layer, a dielectric metal oxide layer, and a second bonding dielectric material layer is formed over a top surface of a substrate including a substrate semiconductor layer. A conductive material layer is formed by depositing a conductive material over the second bonding dielectric material layer. The substrate semiconductor layer is thinned by removing portions of the substrate semiconductor layer that are distal from the layer stack, whereby a remaining portion of the substrate semiconductor layer includes a top semiconductor layer. A semiconductor device may be formed on the top semiconductor layer.
    Type: Grant
    Filed: February 17, 2022
    Date of Patent: May 7, 2024
    Assignee: Taiwan Semiconductor Manufacturing Company Limited
    Inventors: Harry-Hak-Lay Chuang, Kuo-Ching Huang, Wei-Cheng Wu, Hsin Fu Lin, Henry Wang, Chien Hung Liu, Tsung-Hao Yeh, Hsien Jung Chen
  • Patent number: 11747092
    Abstract: A vapor chamber and a heat dissipation device with the vapor chamber are provided. The vapor chamber includes a first plate, a second plate, a first capillary strip, a first communication structure and a working medium. An accommodation space is defined by the first plate and the second plate collaboratively. The first capillary strip is installed in the accommodation space. The accommodation space is divided into a first region and a second region by the first capillary strip. The working medium is accommodated within the accommodation space. The working medium flows between the first region and the second region through the first communication structure. Since the working medium is guided to flow in the accommodation space by the first capillary strip and the first communication structure, the heat dissipating efficacy is enhanced.
    Type: Grant
    Filed: August 17, 2022
    Date of Patent: September 5, 2023
    Assignee: AURAS TECHNOLOGY CO., LTD.
    Inventors: Chih-Wei Chen, Chien-Fu Liu, Guan-Cing Liu
  • Publication number: 20220390184
    Abstract: A vapor chamber and a heat dissipation device with the vapor chamber are provided. The vapor chamber includes a first plate, a second plate, a first capillary strip, a first communication structure and a working medium. An accommodation space is defined by the first plate and the second plate collaboratively. The first capillary strip is installed in the accommodation space. The accommodation space is divided into a first region and a second region by the first capillary strip. The working medium is accommodated within the accommodation space. The working medium flows between the first region and the second region through the first communication structure. Since the working medium is guided to flow in the accommodation space by the first capillary strip and the first communication structure, the heat dissipating efficacy is enhanced.
    Type: Application
    Filed: August 17, 2022
    Publication date: December 8, 2022
    Inventors: CHIH-WEI CHEN, CHIEN-FU LIU, Guan-Cing LIU
  • Patent number: 11454455
    Abstract: A vapor chamber and a heat dissipation device with the vapor chamber are provided. The vapor chamber includes a first plate, a second plate, a first capillary strip, a first communication structure and a working medium. An accommodation space is defined by the first plate and the second plate collaboratively. The first capillary strip is installed in the accommodation space. The accommodation space is divided into a first region and a second region by the first capillary strip. The working medium is accommodated within the accommodation space. The working medium flows between the first region and the second region through the first communication structure. Since the working medium is guided to flow in the accommodation space by the first capillary strip and the first communication structure, the heat dissipating efficacy is enhanced.
    Type: Grant
    Filed: January 3, 2020
    Date of Patent: September 27, 2022
    Assignee: AURAS TECHNOLOGY CO., LTD.
    Inventors: Chih-Wei Chen, Chien-Fu Liu, Guan-Cing Liu
  • Publication number: 20200248968
    Abstract: A vapor chamber and a heat dissipation device with the vapor chamber are provided. The vapor chamber includes a first plate, a second plate, a first capillary strip, a first communication structure and a working medium. An accommodation space is defined by the first plate and the second plate collaboratively. The first capillary strip is installed in the accommodation space. The accommodation space is divided into a first region and a second region by the first capillary strip. The working medium is accommodated within the accommodation space. The working medium flows between the first region and the second region through the first communication structure. Since the working medium is guided to flow in the accommodation space by the first capillary strip and the first communication structure, the heat dissipating efficacy is enhanced.
    Type: Application
    Filed: January 3, 2020
    Publication date: August 6, 2020
    Inventors: CHIH-WEI CHEN, CHIEN-FU LIU, Guan-Cing LIU
  • Patent number: D782988
    Type: Grant
    Filed: November 2, 2015
    Date of Patent: April 4, 2017
    Assignee: EPISTAR CORPORATION
    Inventors: Been-Yu Liaw, Chiu-Lin Yao, Chien-Fu Liu