Abstract: A device includes a semiconductor substrate, a channel layer, a gate structure, source/drain epitaxial structures, and a dielectric isolation layer. The channel layer is over the semiconductor substrate. The gate structure is over the semiconductor substrate and surrounds the channel layer. The source/drain epitaxial structures are connected to the channel layer and arranged in a first direction. The dielectric isolation layer is between the gate structure and the semiconductor substrate. The dielectric isolation layer is wider than the gate structure but narrower than the channel layer in the first direction.

Abstract: The present disclosure describes a semiconductor structure with a dielectric liner. The semiconductor structure includes a substrate and a fin structure on the substrate. The fin structure includes a stacked fin structure, a fin bottom portion below the stacked fin structure, and an isolation layer between the stacked fin structure and the bottom fin portion. The semiconductor structure further includes a dielectric liner in contact with an end of the stacked fin structure and a spacer structure in contact with the dielectric liner.

Abstract: An image sensor device is provided. The image sensor device includes a semiconductor substrate having a front surface, a back surface opposite to the front surface, and a light-sensing region close to the front surface. The image sensor device includes an insulating layer covering the back surface and extending into the semiconductor substrate. The protection layer has a first refractive index, and the first refractive index is less than a second refractive index of the semiconductor substrate and greater than a third refractive index of the insulating layer, and the protection layer conformally and continuously covers the back surface and extends into the semiconductor substrate. The image sensor device includes a reflective structure surrounded by insulating layer in the semiconductor substrate.

Abstract: A photomask structure including a first layout pattern and a second layout pattern is provided. The second layout pattern is located on one side of the first layout pattern. The first layout pattern and the second layout pattern are separated from each other. The first layout pattern has a first edge and a second edge opposite to each other. The second layout pattern has a third edge and a fourth edge opposite to each other. The third edge of the second layout pattern is adjacent to the first edge of the first layout pattern. The second layout pattern includes a first extension portion exceeding an end of the first layout pattern. The first extension portion includes a first protruding portion protruding from the third edge of the second layout pattern. The first protruding portion exceeds the first edge of the first layout pattern.

Abstract: A semiconductor device structure, along with methods of forming such, are described. The structure includes a stack of semiconductor layers spaced apart from and aligned with each other, a first source/drain epitaxial feature in contact with a first one or more semiconductor layers of the stack of semiconductor layers, and a second source/drain epitaxial feature disposed over the first source/drain epitaxial feature. The second source/drain epitaxial feature is in contact with a second one or more semiconductor layers of the stack of semiconductor layers. The structure further includes a first dielectric material disposed between the first source/drain epitaxial feature and the second source/drain epitaxial feature and a first liner disposed between the first source/drain epitaxial feature and the second source/drain epitaxial feature. The first liner is in contact with the first source/drain epitaxial feature and the first dielectric material.

Abstract: A semiconductor die package includes a high dielectric constant (high-k) dielectric layer over a device region of a first semiconductor die that is bonded with a second semiconductor die in a wafer on wafer (WoW) configuration. A through silicon via (TSV) structure may be formed through the device region. The high-k dielectric layer has an intrinsic negative charge polarity that provides a coupling voltage to modify the electric potential in the device region. In particular, the electron carriers in high-k dielectric layer attracts hole charge carriers in device region, which suppresses trap-assist tunnels that result from surface defects formed during etching of the recess for the TSV structure. Accordingly, the high-k dielectric layer described herein reduces the likelihood of (and/or the magnitude of) current leakage in semiconductor devices that are included in the device region of the first semiconductor die.

Abstract: The present disclosure describes a semiconductor structure with a dielectric liner. The semiconductor structure includes a substrate and a fin structure on the substrate. The fin structure includes a stacked fin structure, a fin bottom portion below the stacked fin structure, and an isolation layer between the stacked fin structure and the bottom fin portion. The semiconductor structure further includes a dielectric liner in contact with an end of the stacked fin structure and a spacer structure in contact with the dielectric liner.

Abstract: A method for forming a gate all around transistor includes forming a plurality of semiconductor nanosheets. The method includes forming a cladding inner spacer between a source region of the transistor and a gate region of the transistor. The method includes forming sheet inner spacers between the semiconductor nanosheets in a separate deposition process from the cladding inner spacer.

Abstract: A controller assembly functioning as a joystick includes a driving unit, a sliding member, a potentiometer, and a controlling module. The driving unit includes a driving mechanism, a worm, and a worm wheel, the worm wheel connected to the sliding member. Through the worm, the driving mechanism rotates the worm wheel, causing the sliding member to move up and down only. The potentiometer detects rotation of the worm wheel, the controlling module obtains movement accordingly of the sliding member. The controlling module obtains a user's operating force applied to the driving mechanism, and compares the positional information and the operating force information with preset values to obtain comparison results. The sliding member is driven to move according to the two comparison results. An electronic device with the controller assembly is also disclosed.

Abstract: A method of detecting and identifying postures and gestures of a human user generates a reference model from a reference image and obtains an image of action or gesture being performed. The image is of a user and his flexible and hand-held portable device, and the image comprises a second identification feature. A state of a second feature of the second identification feature in the reference model can generate posture identification. The state of the second feature comprises size, shape, and location of the second identification feature in the hands of the user. A portable device and a non-volatile storage medium of a computer are also disclosed.

Abstract: An electrically-contactless joystick includes a housing, a handle, a first limiting member, a second limiting member, an elastic member, a magnet, and a magnetic sensor. The handle extends through the housing. The first limiting member and the second limiting member are fixed to the handle and movably clamped with the housing. The elastic member is connected to each of the first limiting member, the second limiting member, and the housing. The second limiting member abuts against the handle. The magnet is fixed to either the handle or the housing, and the magnetic sensor is fixed to the other. A terminal device is also provided.

Abstract: A controller assembly functioning as a joystick includes a driving unit, a sliding member, a potentiometer, and a controlling module. The driving unit includes a driving mechanism, a worm, and a worm wheel, the worm wheel connected to the sliding member. Through the worm, the driving mechanism rotates the worm wheel, causing the sliding member to move up and down only. The potentiometer detects rotation of the worm wheel, the controlling module obtains movement accordingly of the sliding member. The controlling module obtains a user's operating force applied to the driving mechanism, and compares the positional information and the operating force information with preset values to obtain comparison results. The sliding member is driven to move according to the two comparison results. An electronic device with the controller assembly is also disclosed.

Abstract: A common mode filter with a multi-spiral layer structure includes a first coil, a first insulating layer, a second coil, a second insulating layer, a third coil, a third insulating layer, and a fourth coil, wherein the first coil serially connects with the fourth coil, and the second coil serially connects with the third coil. A first conductive pillar is configured to connect the first coil and the fourth coil, and a second conductive pillar is configured to connect the second coil and the third coil, wherein the first conductive pillar and the second conductive pillar are internally diagonally disposed relatively within a corner or the same side of corners of the rectangular spiral.

Abstract: A wide-band common mode filtering apparatus includes at least two cascaded common mode filters with different noise-filtering responses, wherein the cut-off frequency of the wide-band common mode filtering apparatus is at the lowest cut-off frequency of the common mode filters, and the noise-filtering response of the wide-band common mode filtering apparatus is the superposition of the noise-filtering responses of the common mode filters. In one embodiment of the present invention, the wide-band common mode filtering apparatus includes a first common mode filter having a first filtering band, and a second common mode filter having a second filtering band different from the first filtering band. The disclosure of the present technique allows the cascaded common mode filters with different filtering bands to form the wide-band common mode filtering apparatus having an overall filtering band to meeting a new demand.

Abstract: A common mode filter with a multi-spiral layer structure includes a first coil, a first insulating layer, a second coil, a second insulating layer, a third coil, a third insulating layer, and a fourth coil, wherein the first coil serially connects with the fourth coil, and the second coil serially connects with the third coil. A first conductive pillar is configured to connect the first coil and the fourth coil, and a second conductive pillar is configured to connect the second coil and the third coil, wherein the first conductive pillar and the second conductive pillar are internally diagonally disposed relatively within a corner or the same side of corners of the rectangular spiral.

Abstract: A wide-band common mode filtering apparatus includes at least two cascaded common mode filters with different noise-filtering responses, wherein the cut-off frequency of the wide-band common mode filtering apparatus is at the lowest cut-off frequency of the common mode filters, and the noise-filtering response of the wide-band common mode filtering apparatus is the superposition of the noise-filtering responses of the common mode filters. In one embodiment of the present invention, the wide-band common mode filtering apparatus includes a first common mode filter having a first filtering band, and a second common mode filter having a second filtering band different from the first filtering band. The disclosure of the present technique allows the cascaded common mode filters with different filtering bands to form the wide-band common mode filtering apparatus having an overall filtering band to meeting a new demand.

Abstract: A touch display device includes a touch panel and a display panel. The touch panel, having a photic region and a peripheral region adjacent to at least one edge of the photic region, includes a cover lens, a touch sensing unit, and an adhesive layer. The touch sensing unit is disposed on an inner surface of the cover lens and is at least partially disposed in the photic region. The adhesive layer covers the touch sensing units and extends to the peripheral region. The touch sensing unit is disposed between the adhesive layer and the cover lens. The display panel is disposed on a surface of the adhesive layer opposite to the cover lens. An area of the touch panel along a vertical projective direction is larger than an area of the display panel so as to at least partially expose the adhesive layer in the peripheral region.

Abstract: A protection structure includes a temperature sensing module, a processing module, and a charging control module. The temperature sensing module senses the temperature of a battery and outputs electronic signals. The processing module receives the electronic signals and outputs a first control signal group. The charging control module receives the electronic signals and the first control signal group, compares the electronic signals with a first reference range, and outputs a second control signal group according to the comparison results. When the second control signal group and the first control signal group both include a charging signal or a stop-charging signal, the executing module controls the battery to charge or stop the battery from charging according to the first control signal group.

Abstract: The present invention provides a dye-sensitized solar cell (DSSC), and a method for manufacturing the same. In the present invention, the DSSC comprises: a dye-sensitized semiconductor electrode, a counter electrode opposite to the dye-sensitized semiconductor electrode, and an electrolyte disposed between the dye-sensitized semiconductor electrode and the counter electrode. Herein, the dye-sensitized semiconductor electrode comprises: an anode; a TiO2 layer disposed on the anode; and a dye absorbed to the TiO2 layer. In addition, the counter electrode comprises: a first transparent substrate with a first transparent electrode formed thereon; and a Pt film disposed on the first transparent electrode, wherein the Pt film is formed with plural Pt nanoparticles, the diameters of the Pt nanoparticles are 1-8 nm, and the thickness of the Pt film is 0.5-3 nm.

Abstract: A protection structure for battery charging includes a temperature sensing module, a processing module, and a charging control module. The temperature sensing module is configured for sensing the temperature of a battery and outputting electronic signals. The processing module is configured for receiving the electronic signals and outputting a first control signal group. The charging control module is configured for receiving the electronic signals and the first control signal group, comparing the electronic signals and a first reference range and outputting a second control signal group according to the comparison results, further recognizing and comparing the second control signal group with the first control signal group. When the second control signal group and the first control signal group both include a charging signal or a stop-charging signal, the executing module controls the battery to charge or stop the battery from charging according to the first control signal group.