Abstract: The present invention relates to a method for manufacturing a collagen membrane, which comprises the following steps: preparing a collagen slurry; degassing the collagen slurry, and then forming collagen gel at a predetermined collagen concentration, ionic strength, pH value, and temperature; removing water in the collagen gel by an absorbent device to form a collagen mat; and flattening and drying the collagen mat under vacuum by a gel dryer. The present invention provides the collagen membranes manufactured by the above-mentioned method. Such membranes are of good biocompatibility, high tensile strength, hydrophilicity, flexibility and easy handling features. Hence, these membranes can function as medical material suitable for repair of tissue and wound healing.

Abstract: In the present invention, a biodegradable bone graft is disclosed, which includes: a scaffold made of a biodegradable material; and a collagen-embedding matrix portion which completely encompasses the scaffold. The above-mentioned bone graft can increase the micro-porosity of the scaffold to enable cells to grow adhesively thereon. Compared with the scaffold only, the above-mentioned bone graft has high hydrophilicity. Hence, the bone graft of the present invention can efficiently retain tissue fluid, cell growth factors, blood and/or bone marrow which are mixed with the bone graft beforehand to achieve osteoinduction. Furthermore, the collagen-embedding matrix portion can also serve as a carrier to encompass other bone graft materials and drug molecules. The present invention also relates to a method for manufacturing the above-mentioned bone graft.

Abstract: An RFID chip is modified with set data before being disposed in an electronic label so as to allow the electronic label to be selectively used with different types of RFID systems. The RFID chip includes a first data storage zone for storing first data set accessible by the first type of RFID system and the second type of RFID system; and a second data storage zone for storing second data set inaccessible by the first type of RFID system and the second type of RFID system. The second data set includes a modifiable code for indicating a type of the electronic label and with which of the first type of RFID system and the second type of RFID system the electronic label is to be used.

Abstract: A reading rack for use with vehicles is proposed, comprising: a sheath member adapted to cover the steering wheel of a vehicle; a bottom member adapted to fasten to a surface of the sheath member; and a pressing member coupled with the sheath member and located at an upper surface of the sheath member, thereby allowing pages of an article/book to be placed above the bottom member and underneath the pressing member. The reading rack of the invention further comprises a holding member consisting of a clipping portion and a coupling portion, wherein the clipping portion is adapted to clip an article or book and couple with the surface of the bottom member by the coupling portion, thereby securely fastening a reading article or a piece of paper onto the steering wheel of a vehicle to provide for convenient reading while stopped or quick reference while driving.

Abstract: A method for detecting a CPE alert signal of a telecommunication system. The method includes: detecting a first signal energy at a first frequency; detecting a second signal energy at a second frequency; comparing a total received signal energy with a summation of at least the first signal energy and the second signal energy to generate a comparison result; and enabling a first detecting procedure or a second detecting procedure for detecting the CPE alert signal according to a comparison result.

Abstract: The key intermediate in any synthesis of Irinotecan is 7-ethyl-10-hydroxy-20(S)-camptothecin. A process for the efficient synthesis of this intermediate is demonstrated proceeding through readily available 20(S)-camptothecin. Various other tecan compounds may be made by use of corresponding 7-alkyl-10-hydroxy-20(S)-camptothecin intermediates.

Abstract: A hose storage apparatus comprising mainly an accommodating mount and a flexible hose. The accommodating mount has a vertical column thereon, and the flexible hose is a coil of hollow tubing curling in a spiral fashion to allow it to wrap around the vertical column when the hose is not in use, and to pull out directly from the top of the vertical column when the hose is in use. Being flexible, the hose may be pulled to extend to a distance. Alternately, the hose automatically retracts to coil on the vertical column due to the recoiling characteristic of the hose, so as to avoid trouble and inconvenience in coiling/uncoiling the flexile hose.

Abstract: The key intermediate in any synthesis of Irinotecan is 7-ethyl-10-hydroxy-20(S)-camptothecin. A process for the efficient synthesis of this intermediate is demonstrated proceeding through readily available 20(S)-camptothecin. Various other tecan compounds may be made by use of corresponding 7-alkyl-10-hydroxy-20(S)-camptothecin intermediates.

Abstract: A method for improving package bonding between multi-level interconnection lines and low K inter-metal dielectric is provided. The present invention includes the steps of forming a trench between each pair of interconnection lines on one level of multi-level interconnection lines, and then filling the trench with an oxide dielectric material, instead of the low K inter-metal dielectric having a K value smaller than 3 filled therein before the trench formation. Since the oxide dielectric material has a K value higher than the low K inter-metal dielectric, the oxide dielectric is hard enough to resist the force of the package bonding. Accordingly, the relibility of bondability between the multi-level interconnection lines and the low K inter-metal dielectric is enhanced.

Abstract: The present invention discloses a technique of enhancing adhesion between a passivation layer and a low-K dielectric layer, in which a SiO2 layer as the passivation formed on the low-K dielectric layer is subjected to N2O plasma annealing. This technique is useful in improving the yield of a process for preparing Cu damascene interconnection.

Abstract: The present invention discloses a technique of enhancing adhesion between a passivation layer and a low-K dielectric layer, in which a SiO2 layer as the passivation formed on the low-K dielectric layer is subjected to N2O plasma annealing. This technique is useful in improving the yield of a process for preparing Cu damascene interconnection.

Abstract: A method of forming a damascene structure. A porous dielectric layer is formed over a substrate. The porous dielectric layer is patterned to form an opening that exposes a portion of the substrate. A conformal low dielectric constant layer is formed over the substrate and the exposed surface of the opening. A portion of the low dielectric constant material is removed to form spacers on the sidewalls of the porous dielectric layer. A conformal barrier layer and a conductive layer are sequentially formed over the opening. Excess conductive material and barrier material outside the opening above the dielectric layer are removed to form a damascene structure.

Abstract: A method of reducing leakage current in a metal-oxide semiconductor (MOS) transistor is employed on a semiconductor wafer, having a substrate, the MOS transistor and a shallow trench isolation (STI) structure adjacent to the MOS transistor on a wafer surface. The method is employed to form a gettering region within the STI structure to getter metal ions diffusing from a silicide layer so as to reduce leakage current in the MOS transistor.

Abstract: A method for manufacturing dual damascene structure is disclosed. A dielectric layer is formed over a substrate having a conductive region. A dual damascene process is carried out to form a trench and a via openings exposing the conductive region in the openings. Sequentially a first barrier metal layer, a second barrier metal layer comprised of tungsten material, and a seed layer are formed over the dielectric layer and covering the sidewalls and the bottom of the trench and the via openings. A conductive metal layer is then blanket deposited over the dielectric layer and the top surface is planarized to remove portions of the conductive metal layer, the seed layer, the second barrier metal layer, and the first barrier metal layer until the dielectric layer is exposed.

Abstract: A method of forming a shallow trench isolation (STI) structure. A pad oxide layer and a cap layer are sequentially formed over a substrate. The pad oxide layer, the cap layer and the substrate are patterned to form a trench. Oxide material is deposited into the trench to form a first oxide layer. The cap layer is removed to expose a portion of the first oxide layer. The pad oxide layer is removed. A selective liquid phase deposition is conducted to form a second oxide layer around the exposed first oxide layer.

Abstract: A digital non-contact blade position detection apparatus is provided for use on a wafer dicing machine for blade position detection so as to correct the position of the cutting blade.

Abstract: A method of forming a copper dual damascene structure is disclosed. The method comprises forming copper lead lines and copper contacts simultaneously and selectively depositing tungsten layers on silicide layers formed on the active regions to complete the copper dual damascene structure and avoid the diffusion of copper into the active regions.

Abstract: A temperature monitor is included inside an ion implanting chamber to constantly monitor the wafer temperature during ion implantation. The measured temperature signal is sent to a central control system through an interface circuit. When an abnormal temperature is detected, the central control system automatically ceases the ion implantation operation and triggers an alarm for operators.

Abstract: A protecting, diversified and/or better operable automated carrier is provided. The carrier includes a carrying body mounting thereon a driving device electrically connected to a controller electrically connected to a commanding device for controlling the moving speed and direction of the carrying body, a CPU electrically connected between the controller and the commanding device, and a protecting device electrically connected to the CPU and capable of resulting in a desired response when the carrying body is within a predetermined distance from an obstacle.