Abstract: A back side metallization thin film structure is provided, which includes a wafer and a metallic nano-twinned thin film on the back side of the wafer. A plurality of integrated circuit devices are formed on the front side of the wafer. The metallic nano-twinned thin film includes silver, copper, gold, palladium, or nickel. The metallic nano-twinned thin film has a transition layer near the wafer and a twin layer away from the wafer. The twin layer accounts for at least 70% of the thickness of the metallic nano-twinned thin film and includes parallel-arranged twin boundaries. The parallel-arranged twin boundaries include more than 50% of (111) crystal orientation. The back side metallization thin film structure is formed by activating the wafer surface by ion beam bombardment, followed by an evaporation deposition process performed on the activated wafer surface with simultaneous ion beam bombardment.

Abstract: A nano-twinned ultra-thin metallic film structure is provided. The nano-twinned ultra-thin metallic film structure includes a substrate and a nano-twinned metallic thin film on the surface of the substrate. The nano-twinned metallic thin film has a thickness of 0.5 ?m to 3 ?m and includes silver, copper, gold, palladium or nickel. The nano-twinned metallic thin film has a transition layer near the substrate and a twin layer away from the substrate. The twin layer accounts for at least 70% of the thickness of the nano-twinned metallic thin film and has parallel-arranged twin boundaries. The parallel-arranged twin boundaries include more than 50% (111) crystal orientation. The nano-twinned ultra-thin metallic film structure is formed by activating the substrate surface using ion beam bombardment, followed by performing a sputtering process on the activated substrate surface with a substrate bias.

Abstract: Some embodiments of the present disclosure relate to a processing tool. The tool includes a housing enclosing a processing chamber, and an input/output port configured to pass a wafer through the housing into and out of the processing chamber. A back-side macro-inspection system is arranged within the processing chamber and is configured to image a back side of the wafer. A front-side macro-inspection system is arranged within the processing chamber and is configured to image a front side of the wafer according to a first image resolution. A front-side micro-inspection system is arranged within the processing chamber and is configured to image the front side of the wafer according to a second image resolution which is higher than the first image resolution.

Abstract: A metallic ribbon for power module packaging is described. The metallic ribbon has a rectangular, oval or oblong cross section. The composition of the metallic ribbon is silver-palladium alloy containing 0.2 to 6 wt % Pd. The metallic ribbon has a thickness of 10 ?m to 500 ?m. The width of the metallic ribbon is 2 to 100 times its thickness. The metallic ribbon includes a plurality of grains. The average grain size of the grains observed in the transverse cross section is 2 ?m to 10 ?m. The metallic ribbon has a plurality of twin grains observed in the transverse cross section, and the number of twin grains observed in the transverse cross section accounts for at least 5% of the total number of grains observed in the transverse cross section.

Abstract: A structure of assembly grasp for palladium-alloy tubes and the manufacturing method thereof are described. The structure of assembly grasp for palladium-alloy tubes includes a grasp with a plurality of holes, a plurality of palladium-alloy tubes inserted into the plurality of holes, and an intermetallic compound layer between the palladium-alloy tubes and the inner sidewalls of the plurality of holes.

Abstract: A structure of assembly grasp for palladium-alloy tubes and the manufacturing method thereof are described. The structure of assembly grasp for palladium-alloy tubes includes a grasp with a plurality of holes, a plurality of palladium-alloy tubes inserted into the plurality of holes, and an intermetallic compound layer between the palladium-alloy tubes and the inner sidewalls of the plurality of holes.

Abstract: A graphene coated silver alloy wire is provided. The composite wire includes a core wire and one to three layers of graphene covering surfaces of the core wire. The core wire is made of a silver-based alloy including 2 to 6 weight percent of palladium. The core wire may be optionally added with 0.01 to 10 weight percent of gold. The invention also includes a manufacturing method immersing the core wire into a solution including graphene oxide and applying bias to the core wire for manufacturing the graphene coated silver alloy wire.