Abstract: A gate driver applied to a LCD apparatus is disclosed. The gate driver includes a pulse modulation controlling module. When a pulse modulation controlling signal received by the pulse modulation controlling module is changed from a high level to a low level, the pulse modulation controlling module closes an active switch according to the pulse modulation controlling signal, so that a high level power signal will begin discharging to have a modulated pulse form.

Abstract: A hand tool with an illuminating device includes a handle having a receiving space defined therein. A holding seat is received in the receiving space. The holding seat has a battery chamber defined therein, a shank chamber defined therein, and a plurality of bit holders formed thereon. A tool set is received in the holding seat. The tool set includes a plurality of tool bits detachably held in the bit holders and a tool shank detachably received in the shank chamber. The tool shank has a coupling portion extending therefrom and a connecting portion formed thereon for detachably connecting to any one of the tool bits. An illuminating device is received in the receiving space and electrically connected to the holding seat. The illuminating device has a coupling slot defined axially therein for engaging with the coupling portion of the tool shank.

Abstract: An ESD protection device includes a substrate of a first conductivity type, a well region of a second conductivity type, a first doped region of the second conductivity type, a second doped region of the first conductivity type, a third doped region of the second conductivity type, a fourth doped region of the first conductivity type. The well region is configured in the substrate. The first doped region is configured in the well region. The second doped region is configured in the well region and surrounding the first doped region. The third doped region is configured in the well region and surrounding the first doped region and the second doped region. The fourth doped region is configured in the well region and under the first doped region and the second doped region. The fourth doped region is coupled with the first doped region and with the second doped region, respectively.

Abstract: A filler circuit cell is disclosed. The filler circuit cell includes a decoupled capacitor, a tie low circuit and a tie high circuit. The decoupled capacitor includes a first NMOS transistor and a first PMOS transistor, in which the source/drain of the first NMOS transistor is connected to a second voltage source and the source/drain of the first PMOS transistor is connected to a first voltage source. The tie low circuit includes a second NMOS transistor and a second PMOS transistor and the tie high circuit includes a third NMOS transistor and a third PMOS transistor.

Abstract: A defect detection system and related method take advantage of multilevel detection technique for detecting defects on an integrated circuit. The defect detection system utilizes an analog-to-digital converter for converting an analog sensing signal into an output code having a plurality of bits. The defect detection methods include an open test method and a short test method. The open and short test methods both include a calibrating method and a testing method individually. The calibrating method functions to determine a preset reference voltage for the analog-to-digital converter based on a predetermined code. The testing method makes use of the preset reference voltage and the predetermined code for generating the output code having a plurality of bits. The output code is then utilized to determine whether or not there are open or short defects on the integrated circuit and to classify the defects.

Abstract: IC design flow includes RTL design, synthesis, APR, and layout. An IC designer can choose a suitable standard cell for an integrated circuit according to the timing, area, and BCI (best cell index) of each standard cell. Further, the BCI of a standard cell can be generated by generating critical dimensions of a standard cell in a plurality of surroundings, generating a plurality of circuit parameters corresponding to the plurality of surroundings, calculating the differences of the plurality of circuit parameters and the ideal circuit parameter of the standard cell, and analyzing the distribution of the differences.

Abstract: A method of generating a standard cell layout includes analyzing a circuit of a standard cell layout and obtaining an analysis result, selecting a plurality of leaf cell layout according to the analysis result, and piecing together the leaf cell layouts to generate the standard cell layout.

Abstract: A method of generating a standard cell layout includes analyzing a circuit of a standard cell layout and obtaining an analysis result, selecting a plurality of leaf cell layout according to the analysis result, and piecing together the leaf cell layouts to generate the standard cell layout.

Abstract: A defect detection system and related method take advantage of multilevel detection technique for detecting defects on an integrated circuit. The defect detection system utilizes an analog-to-digital converter for converting an analog sensing signal into an output code having a plurality of bits. The defect detection methods include an open test method and a short test method. The open and short test methods both include a calibrating method and a testing method individually. The calibrating method functions to determine a preset reference voltage for the analog-to-digital converter based on a predetermined code. The testing method makes use of the preset reference voltage and the predetermined code for generating the output code having a plurality of bits. The output code is then utilized to determine whether or not there are open or short defects on the integrated circuit and to classify the defects.

Abstract: A chip includes a core circuit, a main electrostatic discharge immunizing circuit, and a secondary electrostatic discharge immunizing circuit. The secondary electrostatic discharge immunizing circuit is disposed beneath a core power ring formed between the core circuit and the main electrostatic discharge immunizing circuit for reaching the aim of protecting the core circuit from damage by electrostatic discharges without area penalty of the chip. Both the main electrostatic discharge immunizing circuit and the secondary electrostatic discharge immunizing circuit include a power clamp and a plurality of current limiters, and keep electrostatic currents from reaching the core circuit with the aid of the power clamp.

Abstract: The invention discloses a method for electrostatic discharge (ESD) protection design. The method includes: placing a first input/output cell (I/O cell) and a second input/output cell at a side of a chip, wherein a routing area exists at the side of the chip and is positioned between the first input/output cell and the second input/output cell; providing an electrostatic discharge protection circuit unit; and placing the electrostatic discharge protection circuit unit in the routing area.

Abstract: IC design flow includes RTL design, synthesis, APR, and layout. An IC designer can choose a suitable standard cell for an integrated circuit according to the timing, area, and BCI (best cell index) of each standard cell. Further, the BCI of a standard cell can be generated by generating critical dimensions of a standard cell in a plurality of surroundings, generating a plurality of circuit parameters corresponding to the plurality of surroundings, calculating the differences of the plurality of circuit parameters and the ideal circuit parameter of the standard cell, and analyzing the distribution of the differences.

Abstract: A scan driver for a liquid crystal display (LCD) includes first and second address logic units, first and second level shifters and a decoder. The first address logic unit enables an ith first address signal among N first address signals during a Kth clock period according to a control signal, wherein the number i is equal to a remainder of K/N. The second address logic unit enables a jth second address signal among M second address signals during the Kth clock period according to the control signal, wherein the number j is equal to a quotient of K/N plus 1. The first and second level shifters respectively increase swings of the first and second address signals. When the ith first address signal and the jth second address signal are enabled, the decoder enables a (j?1)×N+i)th scan signal among M×N scan signals.

Abstract: A substrate is provided having an oxide layer, a first nitride-silicon, a STI, and a second nitride-silicon. A pattern poly-silicon layer on the second nitride-silicon layer is etched to form a deep trench opening. Etching the pattern poly-silicon layer also deepens the deep trench opening. Then, a conductive layer is filled in the deep trench opening.

Abstract: A substrate is provided having an oxide layer, a first nitride-silicon, a STI, and a second nitride-silicon. A pattern poly-silicon layer on the second nitride-silicon layer is etched to form a deep trench opening. Etching the pattern poly-silicon layer also deepens the deep trench opening. Then, a conductive layer is filled in the deep trench opening.

Abstract: A dynamic random access memory including a substrate, an isolation structure, two transistors, two trench capacitors and two passing gates is provided. The isolation structure, including a first isolation structure and a second isolation structure, is disposed in the substrate. The second isolation structure is disposed in the substrate above the first isolation structure and the bottom surface of the second isolation structure is lower than the top surface of the substrate. The periphery of the second isolation structure is beyond that of the first isolation structure. The transistors are disposed on the substrate respectively at two sides of the isolation structure. The trench capacitors are respectively disposed between the transistors and the isolation structures. A portion of the second isolation structure is disposed in the trench capacitor. The passing gates are completely disposed on the second isolation structure.

Abstract: A dynamic random access memory including a substrate, an isolation structure, two transistors, two trench capacitors and two passing gates is provided. The isolation structure, including a first isolation structure and a second isolation structure, is disposed in the substrate. The second isolation structure is disposed in the substrate above the first isolation structure and the bottom surface of the second isolation structure is lower than the top surface of the substrate. The periphery of the second isolation structure is beyond that of the first isolation structure. The transistors are disposed on the substrate respectively at two sides of the isolation structure. The trench capacitors are respectively disposed between the transistors and the isolation structures. A portion of the second isolation structure is disposed in the trench capacitor. The passing gates are completely disposed on the second isolation structure.