Abstract: A method includes providing a detector disposed above a semiconductor structure; identifying a portion of the semiconductor structure at a temperature substantially greater than a predetermined threshold by the detector; rotating the stage; and deriving a position of the portion of the semiconductor structure based upon the rotation of the stage.

Abstract: A system and a method for parameter optimization with adaptive search space and a user interface using the same are provided. The system includes a data acquisition unit, an adaptive adjustment unit and an optimization search unit. The data acquisition unit obtains a set of executed values of several operating parameters and a target parameter. The adaptive adjustment unit includes a parameter space transformer and a search range definer. The parameter space transformer performs a space transformation on a parameter space of the operating parameters according to the executed values. The search range definer defines a parameter search range in a transformed parameter space based on the sets of the executed values. The optimization search unit takes the parameter search range as a limiting condition and takes optimizing the target parameter as a target to search for a set of recommended values of the operating parameters.

Abstract: Disclosed herein is a complex, a contrast agent and the method for treating a disease related to CXCR4 receptor. The complex is configured to bind the CXCR4 receptor, and is used as a medicament for diagnosis and treatment of cancers and other indications related to the CXCR4 receptor.

Abstract: An acute kidney injury predicting system and a method thereof are proposed. A processor reads the data to be tested, the detection data, the machine learning algorithm and the risk probability comparison table from a main memory. The processor trains the detection data according to the machine learning algorithm to generate an acute kidney injury prediction model, and inputs the data to be tested into the acute kidney injury prediction model to generate an acute kidney injury characteristic risk probability and a data sequence table. The data sequence table lists the data to be tested in sequence according to a proportion of each of the data to be tested in the acute kidney injury characteristics. The processor selects one of the medical treatment data from the risk probability comparison table according to the acute kidney injury characteristic risk probability.

Abstract: A package structure including a redistribution circuit structure, a wiring substrate, first conductive terminals, an insulating encapsulation, and a semiconductor device is provided. The redistribution circuit structure includes stacked dielectric layers, redistribution wirings and first conductive pads. The first conductive pads are disposed on a surface of an outermost dielectric layer among the stacked dielectric layers, the first conductive pads are electrically connected to outermost redistribution pads among the redistribution wirings by via openings of the outermost dielectric layer, and a first lateral dimension of the via openings is greater than a half of a second lateral dimension of the outermost redistribution pads. The wiring substrate includes second conductive pads. The first conductive terminals are disposed between the first conductive pads and the second conductive pads. The insulating encapsulation is disposed on the surface of the redistribution circuit structure.

Abstract: Methods and systems for dry etching are disclosed. The methods and systems use a showerhead with a perforated plate. The perforated plate includes a primary solid zone having no holes; a first annular zone comprising a first plurality of holes with a first total hole area; a secondary solid zone having no holes; a second annular zone comprising a second plurality of holes with a second total hole area; a third annular zone comprising a third plurality of holes with a third total hole area; and a fourth annular zone comprising a fourth plurality of holes with a fourth total hole area. The third total hole area is greater than the first total hole area and less than the second total hole area, and the fourth total hole area is greater than the second total hole area. Dry etched wafers using these systems have improved edge uniformity and improved yield.

Abstract: A chamber liner for a semiconductor process chamber. The chamber liner includes an outer sidewall having a first circumference, and an inner sidewall have a second circumference that is less than the first circumference. The chamber liner also includes a chamber liner fence that is positioned between the outer sidewall and the inner sidewall. The chamber liner fence includes a first zone having one or more first zone openings, a second zone having one or more second zone openings, and a third zone having one or more third zone opening. The chamber liner further includes a split door positioned in the outer sidewall. Each of the first, second, and third zones have different widths, with the width of the third zone opening less than the width of the second zone opening, and the second zone opening less than or equal to the width of the first zone opening.

Abstract: In a semiconductor manufacturing method includes providing a plurality of patterns on a semiconductor substrate. The patterns include an NMOS structure arranged next to an N+/N well structure, and/or a PMOS structure arranged next to a P+/P well structure. The method further includes: receiving a plurality of images by applying an electron beam to the patterns; and transferring the semiconductor substrate to a next process step if there is no image conversion according to a predetermined image contrast property of the patterns.

Abstract: An electronic system includes a main chip, a non-volatile storage circuit, and a detector circuit. The main chip is configured to read first time of a clock circuit. The non-volatile storage circuit is coupled to the main chip. The main chip stores the first time into the non-volatile storage circuit. The detector circuit includes a first output terminal. The first output terminal is coupled to the main chip. When a cold boot event occurs, the main chip reads the first time from the non-volatile storage circuit, and determines a reason of the cold boot event according to the first time, a second time of the clock circuit, and a logic value at the first output terminal.

Abstract: A method of plasma etching a semiconductor wafer includes: securing the semiconductor wafer to a mounting platform within a process chamber such that an outer edge of the semiconductor wafer is encircled by a sloped annular ring having a plurality of perforation therein, the sloped annular ring having an inner edge at a first end of the sloped annular ring and an outer edge at a second end of the sloped annular ring. Suitably, the first end is opposite the second end and the first end resides in a first plane and the second end resides in a second plane different from the first plane. The method further includes generating a plasma within the process chamber such that the semiconductor wafer is exposed to the plasma and creating a flow of at least one of plasma and gas through the perforations in the sloped annular ring.

Abstract: A method for fabricating a package structure is provided. The method includes premixing cellulose nanofibrils (CNFs) and a two-dimensional (2D) material in a solvent to form a solution; removing the solvent from the solution to form a composite filler; mixing a prepolymeric material with the composite filler to form a composite material; and performing a molding process using the composite material.

Abstract: A power supply circuit includes a first regulator and a second regulator. The first regulator is configured to generate a first output signal according to an input signal. A voltage value of the first output signal decreases according to the input signal and a first voltage threshold value at a power-off stage. The second regulator is configured to be enabled according to the first output signal to generate a second output signal according to the input signal. A voltage value of the second output signal decreases according to the input signal and a second voltage threshold value at the power-off stage. The second voltage threshold value is greater than the first voltage threshold value.

Abstract: A method of plasma etching a semiconductor wafer includes: securing the semiconductor wafer to a mounting platform within a process chamber such that an outer edge of the semiconductor wafer is encircled by a sloped annular ring having a plurality of perforation therein, the sloped annular ring having an inner edge at a first end of the sloped annular ring and an outer edge at a second end of the sloped annular ring. Suitably, the first end is opposite the second end and the first end resides in a first plane and the second end resides in a second plane different from the first plane. The method further includes generating a plasma within the process chamber such that the semiconductor wafer is exposed to the plasma and creating a flow of at least one of plasma and gas through the perforations in the sloped annular ring.

Abstract: A cantilever for gas flow direction control configured to support an electrode housing bowl in an associated etch process chamber. The cantilever may have a cross-section that is circular, elliptical, or airfoil shaped. The shape of the cantilever induces the flow of gas and etch products within the chamber around the cantilever, reducing turbulence around the edge of a wafer.

Abstract: A power supply circuit includes a first regulator and a second regulator. The first regulator is configured to generate a first output signal according to an input signal. A voltage value of the first output signal decreases according to the input signal and a first voltage threshold value at a power-off stage. The second regulator is configured to be enabled according to the first output signal to generate a second output signal according to the input signal. A voltage value of the second output signal decreases according to the input signal and a second voltage threshold value at the power-off stage. The second voltage threshold value is greater than the first voltage threshold value.

Abstract: A performance management method and an electronic device are provided. The method is applied to the electronic device with a system processor and includes: sensing a temperature of the electronic device and determining whether the temperature is greater than a first temperature setting value; when the temperature is not greater than the first temperature setting value, initiating a frequency increasing procedure; when the temperature is greater than the first temperature setting value, determining whether the temperature is greater than a second temperature setting value, where the second temperature setting value is greater than the first temperature setting value; when the temperature is greater than the first temperature setting value and is not greater than the second temperature setting value, initiating a first frequency reducing procedure; and when the temperature is greater than the second temperature setting value, initiating a second frequency reducing procedure or turning off the system processor.

Abstract: A media streaming device is provided that includes a media streaming module, a super capacitor and a protection module. The media streaming module provides the media stream. The super capacitor has a first terminal coupled to a power-supplying path and a second terminal coupled to a ground terminal. The protection module includes a current limiter and a disabling unit. The current limiter receives a power signal and performs current-limiting to generate a fixed-current power to charge the super capacitor and supply power to the media streaming module through the power-supplying path. The current limiter further detects a voltage of the first terminal of the super capacitor. The disabling unit disables the media streaming module when the voltage of the first terminal of the super capacitor is not higher than a voltage threshold value, and enables the media streaming module when the voltage is higher than the voltage threshold value.

Abstract: A performance management method and an electronic device are provided. The method is applied to the electronic device with a system processor and includes: sensing a temperature of the electronic device and determining whether the temperature is greater than a first temperature setting value; when the temperature is not greater than the first temperature setting value, initiating a frequency increasing procedure; when the temperature is greater than the first temperature setting value, determining whether the temperature is greater than a second temperature setting value, where the second temperature setting value is greater than the first temperature setting value; when the temperature is greater than the first temperature setting value and is not greater than the second temperature setting value, initiating a first frequency reducing procedure; and when the temperature is greater than the second temperature setting value, initiating a second frequency reducing procedure or turning off the system processor.

Abstract: An adaptive pulse width modulation threshold is provided for a flyback converter that controls the transition between the pulse frequency mode of operation and the pulse width modulation mode of operation. The adaptive pulse width modulation mode is adapted responsive to an output voltage for the flyback converter.

Abstract: A media streaming device is provided that includes a media streaming module, a super capacitor and a protection module. The media streaming module provides the media stream. The super capacitor has a first terminal coupled to a power-supplying path and a second terminal coupled to a ground terminal. The protection module includes a current limiter and a disabling unit. The current limiter receives a power signal and performs current-limiting to generate a fixed-current power to charge the super capacitor and supply power to the media streaming module through the power-supplying path. The current limiter further detects a voltage of the first terminal of the super capacitor. The disabling unit disables the media streaming module when the voltage of the first terminal of the super capacitor is not higher than a voltage threshold value, and enables the media streaming module when the voltage is higher than the voltage threshold value.