Abstract: A thin-film solar cell and a manufacturing method thereof are disclosed. The method of manufacturing the thin-film solar cell includes the steps of providing a substrate; forming a diffusion barrier layer on the substrate; forming a back electrode layer on the diffusion barrier layer; forming a precursor layer on the back electrode layer, and the precursor layer including at least Cu, In and Ga; providing an alkali layer on an upper surface of the precursor layer, and the alkali layer being formed of Li, Na, K, Rb, Cs, or an alkali metal compound; providing a selenization process for the precursor layer and the alkali layer to form an absorber layer, such that an atomic percentage concentration of the alkali metal in the absorber layer is ranged between 0.01%˜10%; forming at least a buffer layer on the absorber layer; and forming at least a front electrode layer on the buffer layer.

Abstract: The present invention discloses a laser-scribing method to make a bifacial thin film solar cell and the structure thereof. The laser-scribing method is to form scribing patterns that penetrate different structural layers during the process of forming various structural layers. After the laser-scribing, the top solar cell unit is attached with the bottom solar cell unit by various combining steps to form a solar cell assembly. The solar cell assembly can receive light from both sides via the absorber layers of both of the top solar cell unit and the bottom solar cell unit. The solar cell assembly has an increased output efficiency and a greater power density and the cost of the manufacturing is therefore reduced.

Abstract: The invention discloses a thin film solar cell and the manufacturing method thereof. The thin film solar cell comprises a substrate, a back electrode layer, an absorber layer, a buffer layer, and a transparent electrode layer. The buffer layer is a compound consisted essentially of a metal and at least two elements of Group VIA. The compound has a chemical formula of Mx (VIA1y, VIA2z)w. M represents a singular metal element or an alloy of multiple metal elements, and VIA1 and VIA2 are two different elements of Group VIA. X, y, z and w are non-zero positive numbers. The buffer layer has a band gap gradient between the absorber layer and the transparent electrode layer.