Abstract: Provided therefore herein is a novel acidic fluoride activated cleaning chemistry. The present invention includes novel acidic fluoride activated, unique organic-solvent based microelectronic selective etchant/cleaner compositions with high metal nitride etch and broad excellent compatibility, including tungsten (W) and low-k. It does not use W-incompatible oxidizers, such as hydrogen peroxide or particle-generating corrosion inhibitors.

Abstract: Provided therefore herein is a novel acidic fluoride activated cleaning chemistry. The present invention includes novel acidic fluoride activated, unique organic-solvent based microelectronic selective etchant/cleaner compositions with high metal nitride etch and broad excellent compatibility, including tungsten (W) and low-k. It does not use W-incompatible oxidizers, such as hydrogen peroxide or particle-generating corrosion inhibitors.

Abstract: Semi-aqueous, alkaline microelectronic cleaning composition of pH ?8 containing: (A) at least one secondary alkanolamine that generates hydroxides when in contact with water; (B) at least one organic alcohol ether solvent having an evaporation rate of 0.3 or less when n-butyl acetate's evaporation rate is taken as the baseline rate of 1.0; (C) at least one corrosion inhibiting cyclic amide compound; (D) at least one pH balancing azole metal corrosion inhibitor in an amount of 0.08% or less by weight of the composition; and (E) water; and optionally (F) at least one polyhydroxylated phenol compound corrosion inhibitor; and (G) at least one polyalcohol or polythiol surface modification agent containing vicinal hydroxyl or vicinal sulfhydryl groups to pair with the polyhydroxylated phenol compound corrosion inhibitor.

Abstract: Cleaning compositions suitable for cleaning microelectronic structures having silicon dioxide, low-k or high-k di-electrics and copper or aluminum metallizations contain a polar organic solvent selected from amides, sulfones, sulfolenes, selenones and saturated alcohols and a strong alkaline base.

Abstract: Semi-aqueous, alkaline microelectronic cleaning composition of pH?8 containing: (A) at least one secondary alkanolamine that generates hydroxides when in contact with water; (B) at least one organic alcohol ether solvent having an evaporation rate of 0.3 or less when n-butyl acetate's evaporation rate is taken as the baseline rate of 1.0; (C) at least one corrosion inhibiting cyclic amide compound; (D) at least one pH balancing azole metal corrosion inhibitor in an amount of 0.08% or less by weight of the composition; and (E) water; and optionally (F) at least one polyhydroxylated phenol compound corrosion inhibitor; and (G) at least one polyalcohol or polythiol surface modification agent containing vicinal hydroxyl or vicinal sulfhydryl groups to pair with the polyhydroxylated phenol compound corrosion inhibitor.

Abstract: Nanoelectronic and microelectronic cleaning corn positions for cleaning nanoelectronic and microelectronic substrates under supercritical fluid state conditions, and particularly cleaning compositions useful with and having improved compatibility with nanoelectronic and microelectronic substrates characterized by silicon dioxide, sensitive low-n or high-K dielectrics and copper, tungsten, tantalum, nickel, gold, cobalt, palladium, platinum, chromium, ruthenium, rhodium, iridium, hafnium, titanium, molybdenum, tin and other metallization, as well as substrates of A1 or Al(Cu) metallizations and advanced interconnect technologies, are provided by nanoelectronic and microelectronic cleaning compositions.

Abstract: Nanoelectronic and microelectronic cleaning compositions for cleaning nanoelectronic and microelectronic substrates under supercritical fluid state conditions, and particularly cleaning compositions useful with and having improved compatibility with nanoelectronic and microelectronic substrates characterized by silicon dioxide, sensitive low-? or high-? dielectrics and copper, tungsten, tantalum, nickel, gold, cobalt, palladium, platinum, chromium, ruthenium, rhodium, iridium, hafnium, titanium, molybdenum, tin and other metallization, as well as substrates of Al or Al(Cu) metallizations and advanced interconnect technologies, are provided by nanoelectronic and microelectronic cleaning compositions comprising nanoelectronic and microelectronic cleaning compositions of this invention are provided by compositions comprising: (1) a supercritical main fluid reaching a supercritical fluid state at a temperature of 250° C. or less and a pressure of 600 bars or less (592.2 atm, 8702.

Abstract: Microelectronic cleaning compositions for cleaning microelectronic substrates, and particularly cleaning compositions useful with and having improved compatibility with microelectronic substrates characterized by silicon dioxide, sensitive low-? or high-? dielectrics and copper, tungsten, tantalum, nickel, gold, cobalt, palladium, platinum, chromium, ruthenium, rhodium, iridium, hafnium, titanium, molybdenum, tin and other metallization, as well as substrates of Al or Al(Cu) metallizations and advanced interconnect technologies, are provided by microelectronic cleaning compositions comprising halogen acids, salts and derivatives thereof.

Abstract: Cleaning compositions suitable for cleaning microelectronic structures having silicon dioxide, low-k or high-k dielectrics and copper or aluminum metallizations contain an oxidizing agent and a polar organic solvent selected from amides, sulfones, sulfolenes, selenones and saturated alcohols, and optionally other components.

Abstract: Ammonia-free cleaning compositions for cleaning microelectronic substrates, and particularly to such cleaning compositions useful with and having improved compatibility with microelectronic substrates characterized by sensitive porous, low-? and high-? dielectrics and copper metallization. Cleaning compositions for stripping photoresists, cleaning residues from plasma generated organic, organometallic and inorganic compounds, and cleaning residues from planarization processes. The cleaning composition contain one or more non-ammonium producing strong base containing non-nucleophilic, positively charged counter ions and one or more steric hindered amide solvents.

Abstract: Ammonia-free, HF-free cleaning compositions for cleaning photoresist and plasma ash residues from microelectronic substrates, and particularly to such cleaning compositions useful with and having improved compatibility with microelectronic substrates characterized by sensitive porous and low-k to high-k dielectrics and copper metallization. The cleaning composition contain one or more non-ammonium producing, non-HF producing fluoride salt (non ammonium, quaternary ammonium fluoride salt) in a suitable solvent matrix.

Abstract: Ammonia-free cleaning compositions for cleaning microelectronic substrates, and particularly to such cleaning compositions useful with and having improved compatibility with microelectronic substrates characterized by sensitive porous dielectrics, low-k or high-k dielectrics and copper metallization. Cleaning compositions for stripping photoresists, cleaning residues from plasma generated organic, organometallic and inorganic compounds, and cleaning residues from planarization processes. The cleaning composition contain one or more non-ammonium producing strong base containing non-nucleophilic, positively charged counter ions and one or more corrosion inhibiting solvent compounds, said corrosion inhibiting solvent compound having at least two sites capable of complexing with metals.

Abstract: Ammonia-free, HF-free cleaning compositions for cleaning photoresist and plasma ash residues from microelectronic substrates, and particularly to such cleaning compositions useful with and having improved compatibility with microelectronic substrates characterized by sensitive porous and low-k to high-k dielectrics and copper metallization. The cleaning composition contain one or more non-ammonium producing, non-HF producing fluoride salt (non ammonium, quaternary ammonium fluoride salt) in a suitable solvent matrix.

Abstract: Ammonia-free cleaning compositions for cleaning microelectronic substrates, and particularly to such cleaning compositions useful with and having improved compatibility with microelectronic substrates characterized by sensitive porous, low-k and high-k dielectrics and copper metallization. Cleaning compositions for stripping photoresists, cleaning residues from plasma generated organic, organometallic and inorganic compounds, and cleaning residues from planarization processes. The cleaning composition contain one or more non-ammonium producing strong base containing non-nucleophilic, positively charged counter ions and one or more steric hindered amide solvents.