Abstract: A touch electrode device includes first electrode lines and second electrode lines formed on a transparent substrate. An insulating block is disposed at a junction between a first conductive connecting portion of the first electrode line and a second conductive connecting portion of the second electrode line. At least one insulating line is extended from the insulating block and disposed along the first electrode line.

Abstract: A method of forming a photolithography mask including forming a first linear non-dense feature on the mask and forming a plurality of parallel linear assist features disposed substantially perpendicular to the at least one linear non-dense design feature. In an embodiment, the photolithography mask further includes a first transverse linear assist feature disposed substantially transverse to the plurality of parallel linear assist features.

Abstract: The present invention is directed to a touch panel. The touch panel includes an optical layer disposed on a bottom surface of at least one peripheral edge of a transparent substrate. A light shielding layer is disposed on at least a portion of a bottom surface of the optical layer. A touch sensing layer is disposed below the transparent substrate and the light shielding layer.

Abstract: A touch electrode device includes a substrate and at least one transparent electrode layer. The transparent electrode layer is disposed above a surface of the substrate. The transparent electrode layer includes a plurality of metal nanowires.

Abstract: The present invention is directed to a touch panel. The touch panel includes a light shielding layer disposed on a bottom surface of at least one peripheral edge of a transparent substrate. An optical layer with a refractive index greater than 1.5 is disposed on a surface of the transparent substrate. A touch sensing layer is disposed below the transparent substrate.

Abstract: A method of forming a photolithography mask including forming a first linear non-dense feature on the mask and forming a plurality of parallel linear assist features disposed substantially perpendicular to the at least one linear non-dense design feature. In an embodiment, the photolithography mask further includes a first transverse linear assist feature disposed substantially transverse to the plurality of parallel linear assist features.

Abstract: A photolithography mask includes a design feature located in an isolated or semi-isolated region of the mask and a plurality of parallel linear assist features disposed substantially perpendicular to the design feature. The plurality of parallel linear assist features may include a first series of parallel assist features disposed on a first side of the design feature and perpendicularly thereto, and a second series of parallel assist features disposed on a second side of the design feature and perpendicularly thereto.

Abstract: An optimized optical proximity correction modeling method comprises receiving a selection of a regression method, displaying regression parameters, receiving values for the displayed regression parameters, receiving a selection of an optimization method, displaying optimization parameters, receiving values for the displayed optimization parameters, and generating an optimized optical proximity correction output.

Abstract: A photolithography mask includes a design feature located in an isolated or semi-isolated region of the mask and a plurality of parallel linear assist features disposed substantially perpendicular to the design feature. The plurality of parallel linear assist features may include a first series of parallel assist features disposed on a first side of the design feature and perpendicularly thereto, and a second series of parallel assist features disposed on a second side of the design feature and perpendicularly thereto.

Abstract: An automatic air-blown cleaning apparatus for cleaning a liquid crystal display (LCD) component in an LCD assembly process. The automatic air-blown cleaning apparatus has an assembly station for receiving and assembling the liquid crystal display component, a conveying device for delivering the liquid crystal display component to the next assembly station, and an air filtering blower provided on the conveying device. The air filtering blower sends an air flow toward the liquid crystal display component to remove residual matter from the liquid crystal display component.

Abstract: A photolithography mask includes a design feature located in an isolated or semi-isolated region of the mask and a plurality of parallel linear assist features disposed substantially perpendicular to the design feature.

Abstract: An automatic air-blown cleaning apparatus for cleaning a liquid crystal display (LCD) component in an LCD assembly process. The automatic air-blown cleaning apparatus has an assembly station for receiving and assembling the liquid crystal display component, a conveying device for delivering the liquid crystal display component to the next assembly station, and an air filtering blower provided on the conveying device. The air filtering blower sends an air flow toward the liquid crystal display component to remove residual matter from the liquid crystal display component.

Abstract: An automatic air-blown cleaning apparatus for cleaning a liquid crystal display (LCD) component in an LCD assembly process. The automatic air-blown cleaning apparatus has an assembly station for receiving and assembling the liquid crystal display component, a conveying device for delivering the liquid crystal display component to the next assembly station, and an air filtering blower provided on the conveying device. The air filtering blower sends an air flow toward the liquid crystal display component to remove residual matter from the liquid crystal display component.

Abstract: An automatic air-blown cleaning apparatus for cleaning a liquid crystal display (LCD) component in an LCD assembly process. The automatic air-blown cleaning apparatus has an assembly station for receiving and assembling the liquid crystal display component, a conveying device for delivering the liquid crystal display component to the next assembly station, and an air filtering blower provided on the conveying device. The air filtering blower sends an air flow toward the liquid crystal display component to remove residual matter from the liquid crystal display component.

Abstract: A method of dividing a semiconductor integrated circuit pattern. The pattern has a plurality of cells with the same shape and a polygonal planar positioned between each cell, the polygonal planar has two parallel horizontal edges and a plurality of vertexes. The method includes depicting a division line to divide the polygonal planar positioned between each cell into a plurality of unit figures. The division line begins along a horizontal edge of the polygonal planar, and when meeting with a vertex, the division line extends a vertical line segment from the horizontal edge to another horizontal edge.

Abstract: In accordance with the present invention, a method is provided for improving process window in semi-dense area by using a phase shifter. This method comprises a step of providing a transparent substrate. Then, at least two opaque regions are formed on the substrate. A phase shifter is formed in the substrate, wherein the phase shifter is formed in-between adjacent opaque regions. As a result, the phase shifter shifts the incident beam at an angle that reduces the proximity effect and improves the optical contrast and the depth of focus (DOF) to get wider process window.

Abstract: A phase error monitor pattern and its related applications. The phase error monitor pattern includes an alternating phase shift pattern on the peripheries of an alternating phase shift mask and a modification pattern on the peripheries of a modification pattern. The alternating phase shift mask and the modification mask are used in sequence. The alternating phase shift pattern has a plurality of pairs of first non-transparent regions. Each pair of first non-transparent regions is located at each side of a phase shift region. The modification pattern has a plurality of second non-transparent regions. Each second non-transparent region corresponds in position to the non-transparent region on a first side of each pair of first non-transparent regions. The method of monitoring phase errors includes sequentially performing photo-exposure of a positive photoresist using the alternating phase shift mask and the modification mask and measuring the deviations of the monitor photoresist pattern.

Abstract: The present invention provides An alternating phase shifting mask (Alt-PSM), that is to be used in a double exposure lithographic process with a light source of 248 nm. The Alt-PSM comprises: (1) a quartz substrate; (2) at least one semi-dense line on the substrate, wherein the semi-dense line is adjacent to a clear region with a width larger than 2 nm on one side and on the other side is adjacent to a dense-line pattern with a narrow pitch; (3) a first phase shifting region, which is located between the dense line pattern and the semi-dense line pattern and is adjacent to the semi-dense line; and (4) a second phase shifting region with a predetermined width, which is adjacent to the semi-dense line and located on the side opposite to the first phase shifting region; wherein the phase difference between the first phase shifting region and the second phase shifting region is 180 degree.

Abstract: The present invention provides An alternating phase shifting mask (Alt-PSM), that is to be used in a double exposure lithographic process with a light source of 248 nm. The Alt-PSM comprises: (1) a quartz substrate; (2) at least one semi-dense line on the substrate, wherein the semi-dense line is adjacent to a clear region with a width larger than 2 nm on one side and on the other side is adjacent to a dense-line pattern with a narrow pitch; (3) a first phase shifting region, which is located between the dense line pattern and the semi-dense line pattern and is adjacent to the semi-dense line; and (4) a second phase shifting region with a predetermined width, which is adjacent to the semi-dense line and located on the side opposite to the first phase shifting region; wherein the phase difference between the first phase shifting region and the second phase shifting region is 180 degree.

Abstract: A phase error monitor pattern and its related applications. The phase error monitor pattern includes an alternating phase shift pattern on the peripheries of an alternating phase shift mask and a modification pattern on the peripheries of a modification pattern. The alternating phase shift mask and the modification mask are used in sequence. The alternating phase shift pattern has a plurality of pairs of first nontransparent regions. Each pair of first non-transparent regions is located at each side of a phase shift region. The modification pattern has a plurality of second non-transparent regions. Each second non-transparent region corresponds in position to the nontransparent region on a first side of each pair of first non-transparent regions. The method of monitoring phase errors includes sequentially performing photo-exposure of a positive photoresist using the alternating phase shift mask and the modification mask and measuring the deviations of the monitor photoresist pattern.