Abstract: The present disclosure provides a semiconductor structure with having a source/drain feature with a central cavity, and a source/drain contact feature formed in central cavity of the source/drain region, wherein the source/drain contact feature is nearly wrapped around by the source/drain region. The source/drain contact feature may extend to a lower most of a plurality semiconductor layers.

Abstract: Exemplary video processing methods and apparatuses for encoding or decoding a current block by inter prediction are disclosed. Input data of a current block is received and partitioned into sub-partitions and motion refinement is independently performed on each sub-partition. A reference block for each sub-partition is obtained from one or more reference pictures according to an initial motion vector (MV). A refined MV for each sub-partition is derived by searching around the initial MV with N-pixel refinement. One or more boundary pixels of the reference block for a sub-partition is padded for motion compensation of the sub-partition. A final predictor for the current block is generated by performing motion compensation for each sub-partition according to its refined MV. The current block is then encoded or decoded according to the final predictor.

Abstract: A method includes polishing a semiconductor substrate of a first die to reveal first through-vias that extend into the semiconductor substrate, forming a dielectric layer on the semiconductor substrate, and forming a plurality of bond pads in the dielectric layer. The plurality of bond pads include active bond pads and dummy bond pads. The active bond pads are electrically coupled to the first through-vias. The first die is bonded to a second die, and both of the active bond pads and the dummy bond pads are bonded to corresponding bond pads in the second die.

Abstract: Method and apparatus for affine CPMV or ALF refinement are mentioned. According to this method, statistical data associated with the affine CPMV or ALF refinement are collected over a picture area. Updated parameters for the affine CPMV refinement or the ALF refinement are then derived based on the statistical data, where a process to derive the updated parameters includes performing multiplication using a reduced-precision multiplier for the statistical data. The reduced-precision multiplier truncates at least one bit of the mantissa part. In another embodiment, the process to derive the updated parameters includes performing reciprocal for the statistical data using a lookup table with (m?k)-bit input by truncating k bits from the m-bit mantissa part, and contents of the lookup table includes m-bit outputs. m and k are positive integers.

Abstract: Various schemes pertaining to pre-encoding processing of a video stream with motion compensated temporal filtering (MCTF) are described. An apparatus determines a filtering interval for a received raw video stream having pictures in a temporal sequence. The apparatus selects from the pictures a plurality of target pictures based on the filtering interval, as well as a group of reference pictures for each target picture to perform pixel-based MCTF, which generates a corresponding filtered picture for each target picture. The apparatus subsequently transmits the filtered pictures as well as non-target pictures to an encoder for encoding the video stream. Subpictures of natural images and screen content images are separately processed by the apparatus.

Abstract: The present invention provides a control method of a receiver. The control method includes the steps of: when the receiver enters a sleep/standby mode, continually detecting an auxiliary signal from an auxiliary channel to generate a detection result; and if the detection result indicates that the auxiliary signal has a preamble or a specific pattern, generating a wake-up control signal to wake up the receiver before successfully receiving the auxiliary signal having a wake-up command.

Abstract: A semiconductor device includes a fin extending from a substrate. The fin has a source/drain region and a channel region. The channel region includes a first semiconductor layer and a second semiconductor layer disposed over the first semiconductor layer and vertically separated from the first semiconductor layer by a spacing area. A high-k dielectric layer at least partially wraps around the first semiconductor layer and the second semiconductor layer. A metal layer is formed along opposing sidewalls of the high-k dielectric layer. The metal layer includes a first material. The spacing area is free of the first material.

Abstract: A laser inspection system is provided. A laser source emits a laser with a first spectrum and the laser is transmitted by a first optical fiber. A gain optical fiber doped with special ions is connected to the first optical fiber, and a light detector is provided around the gain optical fiber. When the laser with the first spectrum passes through the gain optical fiber, the gain optical fiber absorbs part of the energy level of the laser with the first spectrum, so that the laser with the first spectrum is converted to generate light with a second spectrum based on the frequency conversion phenomenon. The light detector detects the intensity of the light with the second spectrum, so that the power of the laser source can be obtained.

Abstract: A micro-electro-mechanical system (MEMS) microphone is provided. The MEMS microphone includes a substrate, a diaphragm, a backplate and a first protrusion. The substrate has an opening portion. The diaphragm is disposed on one side of the substrate and extends across the opening portion of the substrate. The backplate includes a plurality of acoustic holes. The backplate is disposed on one side of the diaphragm. An air gap is formed between the backplate and the diaphragm. The first protrusion extends from the backplate towards the air gap.

Abstract: A semiconductor device comprises a fin structure disposed over a substrate; a gate structure disposed over part of the fin structure; a source/drain structure, which includes part of the fin structure not covered by the gate structure; an interlayer dielectric layer formed over the fin structure, the gate structure, and the source/drain structure; a contact hole formed in the interlayer dielectric layer; and a contact material disposed in the contact hole. The fin structure extends in a first direction and includes an upper layer, wherein a part of the upper layer is exposed from an isolation insulating layer. The gate structure extends in a second direction perpendicular to the first direction. The contact material includes a silicon phosphide layer and a metal layer.

Abstract: A metformin tablet, a metformin tablet for relieving pain and reducing inflammation, and a manufacturing method thereof. The tablet for relieving pain and reducing inflammation comprises: a filler, a diluent, an excipient, a binder, a slow-release agent, a sweetener, and a medicinal powder; the excipient comprises: at least one of PVP, PEG, and polymer; the medicinal powder comprises: at least one of metformin and the excipient. The metformin tablet comprises: a hollow part, a thick colloidal layer formed on an outer side of the hollow part, and a powder colloidal layer formed on an outer side of the thick colloidal layer. The tablet for relieving pain and reducing inflammation comprises: a thick colloidal layer, a powder colloidal layer formed on an outer side of the thick colloidal layer, and a hollow part located at a center of the tablet and on an inner side of the thick colloidal layer.

Abstract: A semiconductor device including a first die and a second die bonded to one another. The first die includes a first passivation layer over a substrate, and first bond pads in the first passivation layer. The second die includes a second passivation layer, which may be bonded to the first passivation layer, and second bond pads in the second passivation layer, which may be bonded to the first bond pads. The second bond pads include inner bond pads and outer bond pads. The outer bond pads may have a greater diameter than the inner bond pads as well as the first bond pads.

Abstract: A light sensor includes an optoelectronic device and a light guide element. The light guide element has a first light incident surface and a light exit surface, so as to allow an incident light to enter the light guide element from the first light incident surface and then exit to the optoelectronic device from the light exit surface; wherein at least one of the light incident surface and the light exit surface has a single curved surface.

Abstract: A switch unit is configured to provide reverse current protection. The switch unit comprises an input terminal, an output terminal, a switch device, an operational amplifier, and a voltage difference circuit. The switch device is coupled between the input terminal and the output terminal. The voltage difference circuit receives the voltage of the output terminal for generating a first signal, where the first signal is greater than the voltage of the output terminal. The operational amplifier is coupled to the input terminal and the first signal for generating a second signal to control the switch device.

Abstract: A physical parameter generator is configured to generate physical parameter information. The physical parameter generator comprises a physical parameter unit, a current source, and a function pin. The physical parameter unit is coupled to the current source for generating an output signal, where the output signal is related to the physical parameter information. The current source is coupled to the function pin for outputting the physical parameter information. When the function pin is in a floating state, the physical parameter generator may generate the physical parameter information by the function pin.

Abstract: A method for preparing a wear-resistant hybrid, includes (A) providing nano-silica with hydroxyl groups on its surface to react with an isocyanate-based silane to form silica with silyl groups; (B) subjecting the silica with silyl groups to a hydrolytic condensation reaction by using a sol-gel technology to form highly bifurcated Si-HB nanoparticles with hydroxyl groups; (C) providing a diisocyanate to react with a polyol to form a urethane pre-polymer; and (D) subjecting the Si-HB nanoparticles with hydroxyl groups to an addition reaction with the urethane pre-polymer and with a chain-extending reagent to form a hybrid of Si-polyurethane (PU/Si-HB), whereby a wear-resistant hybrid of Si-polyurethane is prepared.

Abstract: A method for preparing a wear-resistant hybrid, includes (A) providing nano-silica with hydroxyl groups on its surface to react with an isocyanate-based silane to form silica with silyl groups; (B) subjecting the silica with silyl groups to a hydrolytic condensation reaction by using a sol-gel technology to form highly bifurcated Si-HB nanoparticles with hydroxyl groups; (C) providing a diisocyanate to react with a polyol to form a urethane pre-polymer; and (D) subjecting the Si-HB nanoparticles with hydroxyl groups to an addition reaction with the urethane pre-polymer and with a chain-extending reagent to form a hybrid of Si-polyurethane (PU/Si-HB), whereby a wear-resistant hybrid of Si-polyurethane is prepared.

Abstract: A projector includes a casing, a lens, a bracket, a support member, a first spacer and a first fixing member. The lens is connected to the casing. The bracket is connected to the casing and has a through hole formed thereon. The support member is inserted into the through hole and abuts against the lens. The first spacer is disposed on the support member and has a first curved surface and the first curved surface faces the through hole. The first fixing member is disposed on the support member and pushes the first spacer towards the bracket, such that the first curved surface contacts a periphery of the through hole.

Abstract: A projector includes a casing, a lens, a bracket, a support member, a first spacer and a first fixing member. The lens is connected to the casing. The bracket is connected to the casing and has a through hole formed thereon. The support member is inserted into the through hole and abuts against the lens. The first spacer is disposed on the support member and has a first curved surface and the first curved surface faces the through hole. The first fixing member is disposed on the support member and pushes the first spacer towards the bracket, such that the first curved surface contacts a periphery of the through hole.