Patents by Inventor Chih-Chiang Wu
Chih-Chiang Wu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240170343Abstract: A semiconductor device includes a first set of nanostructures stacked over a substrate in a vertical direction, and each of the first set of nanostructures includes a first end portion and a second end portion, and a first middle portion laterally between the first end portion and the second end portion. The first end portion and the second end portion are thicker than the first middle portion. The semiconductor device also includes a first plurality of semiconductor capping layers around the first middle portions of the first set of nanostructures, and a gate structure around the first plurality of semiconductor capping layers.Type: ApplicationFiled: January 24, 2024Publication date: May 23, 2024Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Sai-Hooi YEONG, Bo-Feng YOUNG, Chi-On CHUI, Chih-Chieh YEH, Cheng-Hsien WU, Chih-Sheng CHANG, Tzu-Chiang CHEN, I-Sheng CHEN
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Publication number: 20240162308Abstract: The present disclosure provides a semiconductor structure with having a source/drain feature with a central cavity, and a source/drain contact feature formed in central cavity of the source/drain region, wherein the source/drain contact feature is nearly wrapped around by the source/drain region. The source/drain contact feature may extend to a lower most of a plurality semiconductor layers.Type: ApplicationFiled: February 9, 2023Publication date: May 16, 2024Inventors: Pin Chun SHEN, Che Chia CHANG, Li-Ying WU, Jen-Hsiang LU, Wen-Chiang HONG, Chun-Wing YEUNG, Ta-Chun LIN, Chun-Sheng LIANG, Shih-Hsun CHANG, Chih-Hao CHANG, Yi-Hsien CHEN
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Patent number: 11923252Abstract: A semiconductor device includes a first set of nanostructures stacked over a substrate in a vertical direction, and each of the first set of nanostructures includes a first end portion and a second end portion, and a first middle portion laterally between the first end portion and the second end portion. The first end portion and the second end portion are thicker than the first middle portion. The semiconductor device also includes a first plurality of semiconductor capping layers around the first middle portions of the first set of nanostructures, and a gate structure around the first plurality of semiconductor capping layers.Type: GrantFiled: January 27, 2021Date of Patent: March 5, 2024Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Sai-Hooi Yeong, Bo-Feng Young, Chi-On Chui, Chih-Chieh Yeh, Cheng-Hsien Wu, Chih-Sheng Chang, Tzu-Chiang Chen, I-Sheng Chen
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Publication number: 20230369441Abstract: A method for fabricating semiconductor device includes the steps of first providing a substrate having a first region and a second region, forming a first bottom barrier metal (BBM) layer on the first region and the second region, forming a first work function metal (WFM) layer on the first BBM layer on the first region and the second region, and then forming a diffusion barrier layer on the first WFM layer.Type: ApplicationFiled: July 26, 2023Publication date: November 16, 2023Applicant: UNITED MICROELECTRONICS CORP.Inventors: Yi-Fan Li, Wen-Yen Huang, Shih-Min Chou, Zhen Wu, Nien-Ting Ho, Chih-Chiang Wu, Ti-Bin Chen
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Publication number: 20230369442Abstract: A method for fabricating semiconductor device includes the steps of first providing a substrate having a first region and a second region, forming a first bottom barrier metal (BBM) layer on the first region and the second region, forming a first work function metal (WFM) layer on the first BBM layer on the first region and the second region, and then forming a diffusion barrier layer on the first WFM layer.Type: ApplicationFiled: July 26, 2023Publication date: November 16, 2023Applicant: UNITED MICROELECTRONICS CORP.Inventors: Yi-Fan Li, Wen-Yen Huang, Shih-Min Chou, Zhen Wu, Nien-Ting Ho, Chih- Chiang Wu, Ti-Bin Chen
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Patent number: 11757016Abstract: A method for fabricating semiconductor device includes the steps of first providing a substrate having a first region and a second region, forming a first bottom barrier metal (BBM) layer on the first region and the second region, forming a first work function metal (WFM) layer on the first BBM layer on the first region and the second region, and then forming a diffusion barrier layer on the first WFM layer.Type: GrantFiled: March 30, 2022Date of Patent: September 12, 2023Assignee: UNITED MICROELECTRONICS CORP.Inventors: Yi-Fan Li, Wen-Yen Huang, Shih-Min Chou, Zhen Wu, Nien-Ting Ho, Chih-Chiang Wu, Ti-Bin Chen
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Publication number: 20230202452Abstract: The disclosure provides a power control device, which comprises a bleeder circuit forming a first discharging path and an aux low-voltage (LV) power supply unit forming a second discharging path. The bleeder circuit is connected with a voltage-regulating capacitor stably maintaining the high-voltage (HV) level from a HV battery. The aux LV power supply unit is connected with the bleeder circuit and the voltage-regulating capacitor in parallel. The aux LV power supply unit provides an aux LV level to the driver, when the power system operates abnormally, the HV level is discharged through the first and second discharging path and/or a third discharging path formed by a driver and a motor.Type: ApplicationFiled: December 27, 2021Publication date: June 29, 2023Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTEInventors: Chih-Chiang WU, Uma Sankar ROUT, Bang-Yuan LIU, Yun-Huan LI
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Patent number: 11664425Abstract: A method for fabricating p-type field effect transistor (FET) includes the steps of first providing a substrate, forming a pad layer on the substrate, forming a well in the substrate, performing an ion implantation process to implant germanium ions into the substrate to form a channel region, and then conducting an anneal process to divide the channel region into a top portion and a bottom portion. After removing the pad layer, a gate structure is formed on the substrate and a lightly doped drain (LDD) is formed adjacent to two sides of the gate structure.Type: GrantFiled: January 20, 2022Date of Patent: May 30, 2023Assignee: UNITED MICROELECTRONICS CORP.Inventors: Shi-You Liu, Tsai-Yu Wen, Ching-I Li, Ya-Yin Hsiao, Chih-Chiang Wu, Yu-Chun Liu, Ti-Bin Chen, Shao-Ping Chen, Huan-Chi Ma, Chien-Wen Yu
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Publication number: 20230143658Abstract: A power module includes: a GaN transistor, an NMOS transistor, a first capacitor, a first diode and a second diode. The NMOS transistor is electrically connected to the GaN transistor. A negative electrode of the first capacitor is electrically connected to an anode of the first diode and a gate of the GaN transistor. A cathode of the second diode is electrically connected to a gate of the NMOS transistor. The power module further includes a power module control terminal electrically connected to an anode of the first capacitor and an anode of the second diode.Type: ApplicationFiled: January 11, 2022Publication date: May 11, 2023Inventors: Ching-Yao LIU, Yueh-Tsung HSIEH, Kuo-Bin WANG, Chih-Chiang WU, Li-Chuan TANG, Wei-Hua CHIENG, Edward Yi CHANG, Stone CHENG
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Patent number: 11646732Abstract: A power module includes: a GaN transistor, an NMOS transistor, a first capacitor, a first diode and a second diode. The NMOS transistor is electrically connected to the GaN transistor. A negative electrode of the first capacitor is electrically connected to an anode of the first diode and a gate of the GaN transistor. A cathode of the second diode is electrically connected to a gate of the NMOS transistor. The power module further includes a power module control terminal electrically connected to an anode of the first capacitor and an anode of the second diode.Type: GrantFiled: January 11, 2022Date of Patent: May 9, 2023Assignee: NATIONAL YANG MING CHIAO TUNG UNIVERSITYInventors: Ching-Yao Liu, Yueh-Tsung Hsieh, Kuo-Bin Wang, Chih-Chiang Wu, Li-Chuan Tang, Wei-Hua Chieng, Edward Yi Chang, Stone Cheng
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Publication number: 20230093515Abstract: A synchronous buck converter using a single gate drive control is provided and includes a drive circuit, a p-type gallium nitride (p-GaN) transistor switch module and an inductor. A gallium nitride power transistor is used as an upper side transistor switch, and a PMOS power transistor is used as a lower side transistor switch in the p-GaN transistor switch module. A gate of the upper side transistor switch and a gate of the lower side transistor switch are coupled to each other and receive a switch signal provided by the drive circuit at the same time. By controlling the on and off of the upper side transistor switch and the lower side transistor switch, the problem of simultaneous activation of the upper and lower side transistor switches can be avoided.Type: ApplicationFiled: December 1, 2021Publication date: March 23, 2023Inventors: Wei-Hua Chieng, Edward Yi Chang, Stone Cheng, Shyr-Long Jeng, Li-Chuan Tang, Chih-Chiang Wu, Ching-Yao Liu, Kuo-Bin Wang
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Patent number: 11569696Abstract: A control method of a minimum power input applicable to a wireless power transfer system including a power transmission unit and at least one power receiving unit is provided. The power transmission unit is electrically connected with a control voltage signal and an input voltage signal and accordingly generates the minimum power input. The power transmission unit transmits the minimum power input wirelessly through a wireless transmission to the at least one power receiving unit for receiving. By adjusting the input voltage signal, the duty ratio and resonant frequency of the control voltage signal, the present invention ensures an optimal power transmission efficiency of the wireless power transmission system. Moreover, parameters of a charge pump reservoir and gate driving circuit can be further designed in view of the trend feedback of its gate drive waveforms so as to optimize the effect of the proposed invention.Type: GrantFiled: May 28, 2021Date of Patent: January 31, 2023Assignee: NATIONAL YANG MING CHIAO TUNG UNIVERSITYInventors: Wei-Hua Chieng, Edward Yi Chang, Stone Cheng, Shyr-Long Jeng, Newton Tang, Chih-Chiang Wu, Ching-Yao Liu, Kuo-Bin Wang
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Publication number: 20230005795Abstract: A method for fabricating a semiconductor device includes the steps of forming a metal gate on a substrate, a spacer around the metal gate, and a first interlayer dielectric (ILD) layer around the spacer, performing a plasma treatment process to transform the spacer into a first bottom portion and a first top portion, performing a cleaning process to remove the first top portion, and forming a second ILD layer on the metal gate and the first ILD layer.Type: ApplicationFiled: August 3, 2021Publication date: January 5, 2023Applicant: UNITED MICROELECTRONICS CORP.Inventors: Yi-Fan Li, Po-Ching Su, Yu-Fu Wang, Min-Hua Tsai, Ti-Bin Chen, Chih-Chiang Wu, Tzu-Chin Wu
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Publication number: 20220385093Abstract: The present disclosure provides a fast charging driver. The fast charging driver is configured to charge a battery of an electronic device. The fast charging driver includes a fast charging circuit and a charging controller. The fast charging circuit includes a first depletion-type GaN transistor, a first enhancement-type field effect transistor, a second depletion-type GaN transistor and a second enhancement-type field effect transistor. The charging controller is configured to control the fast charging circuit to operate in a constant current mode or a constant voltage mode according to a battery level of the battery. By utilizing the first depletion-type GaN transistor and the second depletion-type GaN transistor with a characteristic of a relatively low switching loss, the power consumption during charging the battery by the fast charging driver is decreased to improve the charge speed.Type: ApplicationFiled: April 27, 2022Publication date: December 1, 2022Inventors: Edward Yi CHANG, Stone CHENG, Wei-Hua CHIENG, Shyr-Long JENG, Chih-Chiang WU
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Publication number: 20220285999Abstract: A control method of a minimum power input applicable to a wireless power transfer system including a power transmission unit and at least one power receiving unit is provided. The power transmission unit is electrically connected with a control voltage signal and an input voltage signal and accordingly generates the minimum power input. The power transmission unit transmits the minimum power input wirelessly through a wireless transmission to the at least one power receiving unit for receiving. By adjusting the input voltage signal, the duty ratio and resonant frequency of the control voltage signal, the present invention ensures an optimal power transmission efficiency of the wireless power transmission system. Moreover, parameters of a charge pump reservoir and gate driving circuit can be further designed in view of the trend feedback of its gate drive waveforms so as to optimize the effect of the proposed invention.Type: ApplicationFiled: May 28, 2021Publication date: September 8, 2022Applicant: National Yang Ming Chiao Tung UniversityInventors: Wei-Hua Chieng, Edward Yi Chang, Stone Cheng, Shyr-Long Jeng, Newton Tang, Chih-Chiang Wu, Ching-Yao Liu, Kuo-Bin Wang
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Publication number: 20220223710Abstract: A method for fabricating semiconductor device includes the steps of first providing a substrate having a first region and a second region, forming a first bottom barrier metal (BBM) layer on the first region and the second region, forming a first work function metal (WFM) layer on the first BBM layer on the first region and the second region, and then forming a diffusion barrier layer on the first WFM layer.Type: ApplicationFiled: March 30, 2022Publication date: July 14, 2022Applicant: UNITED MICROELECTRONICS CORP.Inventors: Yi-Fan Li, Wen-Yen Huang, Shih-Min Chou, Zhen Wu, Nien-Ting Ho, Chih-Chiang Wu, Ti-Bin Chen
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Patent number: 11387824Abstract: A voltage-controlled varied frequency pulse width modulator is provided, including a frequency-regulating voltage output device which receives a determining voltage, decides a resonant frequency according to the determining voltage and outputs an oscillation signal having the resonant frequency. A duty-ratio-regulating voltage output device receives the oscillation signal and a reference signal to determine a duty ratio through an inverting closed loop, so as to adjust the oscillation signal to have the duty ratio. By employing the proposed voltage-controlled modulator circuit with tunable frequency and varied pulse width of the present invention, a modulation signal having the determined resonant frequency and duty ratio is obtained. Moreover, the present invention can be further combined with gate drive waveform trend feedback designs to achieve superior power transmission efficiency of a wireless power transmission system to optimize the inventive effect of the present invention.Type: GrantFiled: October 29, 2021Date of Patent: July 12, 2022Assignee: NATIONAL YANG MING CHIAO TUNG UNIVERSITYInventors: Wei-Hua Chieng, Edward Yi Chang, Stone Cheng, Shyr-Long Jeng, Li-Chuan Tang, Chih-Chiang Wu, Yueh-Tsung Hsieh, Ching-Yao Liu, Kuo-Bin Wang
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Publication number: 20220209694Abstract: An operation method and an operation device of a motor driver for driving a motor are provided. The operation method includes: establishing a hysteresis control method; and adjusting a switch frequency of a power module for operating the motor by using the hysteresis control method according to a change of rotation speed of the motor and a current switch frequency.Type: ApplicationFiled: December 29, 2020Publication date: June 30, 2022Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTEInventors: Chih-Chiang WU, Yun-Huan LI, Hsin-Ping CHOU, Shih-Hsiang WU
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Patent number: 11374515Abstract: An operation method and an operation device of a motor driver for driving a motor are provided. The operation method includes: establishing a hysteresis control method; and adjusting a switch frequency of a power module for operating the motor by using the hysteresis control method according to a change of rotation speed of the motor and a current switch frequency.Type: GrantFiled: December 29, 2020Date of Patent: June 28, 2022Assignee: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTEInventors: Chih-Chiang Wu, Yun-Huan Li, Hsin-Ping Chou, Shih-Hsiang Wu
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Publication number: 20220140080Abstract: A method for fabricating p-type field effect transistor (FET) includes the steps of first providing a substrate, forming a pad layer on the substrate, forming a well in the substrate, performing an ion implantation process to implant germanium ions into the substrate to form a channel region, and then conducting an anneal process to divide the channel region into a top portion and a bottom portion. After removing the pad layer, a gate structure is formed on the substrate and a lightly doped drain (LDD) is formed adjacent to two sides of the gate structure.Type: ApplicationFiled: January 20, 2022Publication date: May 5, 2022Applicant: UNITED MICROELECTRONICS CORP.Inventors: Shi-You Liu, Tsai-Yu Wen, Ching-I Li, Ya-Yin Hsiao, Chih-Chiang Wu, Yu-Chun Liu, Ti-Bin Chen, Shao-Ping Chen, Huan-Chi Ma, Chien-Wen Yu