Abstract: A semiconductor device includes a first set of nanostructures stacked over a substrate in a vertical direction, and each of the first set of nanostructures includes a first end portion and a second end portion, and a first middle portion laterally between the first end portion and the second end portion. The first end portion and the second end portion are thicker than the first middle portion. The semiconductor device also includes a first plurality of semiconductor capping layers around the first middle portions of the first set of nanostructures, and a gate structure around the first plurality of semiconductor capping layers.

Abstract: A semiconductor device includes a first set of nanostructures stacked over a substrate in a vertical direction, and each of the first set of nanostructures includes a first end portion and a second end portion, and a first middle portion laterally between the first end portion and the second end portion. The first end portion and the second end portion are thicker than the first middle portion. The semiconductor device also includes a first plurality of semiconductor capping layers around the first middle portions of the first set of nanostructures, and a gate structure around the first plurality of semiconductor capping layers.

Abstract: A connection structure of thermal tube and heat dissipation fins is disclosed. The connection structure comprises thermal tube made from copper or aluminum and heat dissipation fins made from metal, the fins having through holes from the installation of thermal tube as a unit, characterized in that any of the surface of the thermal tube or the heat dissipation fins is provided with a low melting point metal layer, thereby the low melting thermal tube (or the dissipation fins) via appropriate heating process can point metal layer of the combined unit of the effectively fill the gap of the connection surface between the thermal tube and the heat dissipation fins. The connection of the thermal tube and the heat dissipation fins is firm and the conductivity is excellent.

Abstract: Disclosed is a bearing structure of a central processing unit comprises a radiating plate, a back plate, a plurality of screws and elastic elements. The radiating plate has a heat conductive portion and a plurality of sleeves. The back plate is installed below the radiating plate and has a plurality of studs. The plurality of screws are placed within the sleeves of the radiating plate, and protrudes from the bottom of the radiating plate. The plurality of elastic elements being installed between the screws and the sleeve. The radiating plate is moved by the elastic elements so that the heat conductive portion of the radiating plate presses elastically the central processing unit. Therefore, the pressure will not be too large so as to harm the central processing unit, or too small so as to cause the unfastening therebetween. As a result, during assembly, the fastening force of the screws would not be adjusted. Thus, the assembly work becomes easily and the cost is reduced.

Abstract: An electrostatic precipitator (ESP) intermittent energization controller is included with a CPU that adaptively controls the DC power used to energize the ESP. An opacimeter is mounted to the ESP for detecting the opacity of dust particles flowing through the same. The CPU searches through a table consisting of a predetermined number of charge-pause parameter sets until one charge-pause parameter set is found to cause the difference between the detected opacity level and the preset opacity level to be within a predetermined tolerable range.