Abstract: The present disclosure is relates to a conductive film and a manufacturing method thereof. The conductive film includes a base layer, a TPU complex layer, a conductive layer and a TPU surface layer. The TPU complex layer includes a TPU heat-resistant layer and a TPU melting layer. The TPU heat-resistant layer is disposed on the TPU melting layer, and the TPU melting layer is disposed on the base layer. The conductive layer includes a conductive circuit disposed on the TPU heat-resistant layer. The TPU surface layer is disposed on the conductive layer. Utilizing the TPU complex layer, the conductive layer does not contact directly with the base layer to avoid breaking the conductive line of the conductive layer when the base layer is pulled. Therefore, the lifetime of the conductive film can be increased.

Abstract: The present disclosure is relates to a TPU ball structure and a manufacturing method thereof. The TPU ball structure includes a ball bladder layer, a yarn layer and a surface layer. The ball bladder layer is made of TPU material. The yarn layer is made of TPU material, and the yarn layer is disposed to cover the ball bladder layer. The surface layer is made of TPU material, and the surface layer is disposed to cover the yarn layer. The above layers of the TPU ball structure are made of TPU material to satisfy a requirement for environmental protection, and are recyclable. There is no need to use adhesive to adhere the above layers of the TPU ball structure. Therefore, the peeling strength between the layers of the TPU ball structure can be increased so that the whole peeling strength of the TPU ball structure can be increased.

Abstract: A host system initiates an abort of a command that has been placed into a submission queue (SQ) of the host system. The host system identifies at least one of a first outcome and a second outcome. When the first outcome indicates that the command is not completed and the second outcome indicates that the SQ entry has been fetched from the SQ, the host system sends an abort request to a storage device, and issues a cleanup request to direct the host controller to reclaim host hardware resources allocated to the command. The host system adds a completion queue (CQ) entry to a CQ and sets an overall command status (OCS) value of the CQ entry based on at least one of the first outcome and the second outcome.

Abstract: In a file sharing system, a key manager unit realizes a correspondence between the first user identifier and the first public key in response to a registration request of the first user, generates a first key material for encrypting the first file into a first encrypted file, and generates a first credential according to the first user identifier, the first file identifier, the first public key and the first key material after receiving an access-right claim request to the first file from the first user. A file storage unit stores the first encrypted file and the first credential. The first user uses the first user identifier, the first file identifier and the first private key to retrieve the first key material out of the first credential, and uses the first key material to decrypt the first encrypted file into the first file.

Abstract: The present disclosure provides a thin film including a first thermoplastic polyolefin (TPO) elastomer which is anhydride-grafted. The present disclosure further provides a method for manufacturing the thin film, a laminated material and a method for adhesion.

Abstract: The invention provides an LED including a first-type semiconductor layer, an emitting layer, a second-type semiconductor layer, a first electrode, a second electrode, a Bragg reflector structure, a conductive layer and insulation patterns. The first electrode and the second electrode are located on the same side of the Bragg reflector structure. The conductive layer is disposed between the Bragg reflector structure and the second-type semiconductor layer. The insulation patterns are disposed between the conductive layer and the second-type semiconductor layer. Each insulating layer has a first surface facing toward the second-type semiconductor layer, a second surface facing away from the second-type semiconductor layer, and an inclined surface. The inclined surface connects the first surface and the second surface and is inclined with respect to the first surface and the second surface.

Abstract: The invention provides an LED including a first-type semiconductor layer, an emitting layer, a second-type semiconductor layer, a first electrode, a second electrode, a Bragg reflector structure, a conductive layer and insulation patterns. The first electrode and the second electrode are located on the same side of the Bragg reflector structure. The conductive layer is disposed between the Bragg reflector structure and the second-type semiconductor layer. The insulation patterns are disposed between the conductive layer and the second-type semiconductor layer. Each insulating layer has a first surface facing toward the second-type semiconductor layer, a second surface facing away from the second-type semiconductor layer, and an inclined surface. The inclined surface connects the first surface and the second surface and is inclined with respect to the first surface and the second surface.

Abstract: The invention provides an LED including a first-type semiconductor layer, an emitting layer, a second-type semiconductor layer, a first electrode, a second electrode, a Bragg reflector structure, a conductive layer and insulation patterns. The first electrode and the second electrode are located on the same side of the Bragg reflector structure. The conductive layer is disposed between the Bragg reflector structure and the second-type semiconductor layer. The insulation patterns are disposed between the conductive layer and the second-type semiconductor layer. Each insulating layer has a first surface facing toward the second-type semiconductor layer, a second surface facing away from the second-type semiconductor layer, and an inclined surface. The inclined surface connects the first surface and the second surface and is inclined with respect to the first surface and the second surface.

Abstract: The invention provides an LED including a first-type semiconductor layer, an emitting layer, a second-type semiconductor layer, a first electrode, a second electrode, a Bragg reflector structure, a conductive layer and insulation patterns. The first electrode and the second electrode are located on the same side of the Bragg reflector structure. The conductive layer is disposed between the Bragg reflector structure and the second-type semiconductor layer. The insulation patterns are disposed between the conductive layer and the second-type semiconductor layer. Each insulating layer has a first surface facing toward the second-type semiconductor layer, a second surface facing away from the second-type semiconductor layer, and an inclined surface. The inclined surface connects the first surface and the second surface and is inclined with respect to the first surface and the second surface.

Abstract: Provided is a light-emitting diode chip including a semiconductor device layer, a first electrode, a current-blocking layer, a current-spreading layer, and a second electrode. The semiconductor device layer includes a first-type doped semiconductor layer, a second-type doped semiconductor layer, and a light-emitting layer therebetween. The first electrode is electrically connected to the first-type doped semiconductor layer. The current-blocking layer is on the second-type doped semiconductor layer. The current-blocking layer is between the current-spreading layer and the second-type doped semiconductor layer. The second electrode is on the current-spreading layer and electrically connected to the second-type doped semiconductor layer. The current-blocking layer has a first surface facing the semiconductor device layer, a second surface back on to the semiconductor device layer, and a first inclined surface.

Abstract: The invention provides an LED including a first-type semiconductor layer, an emitting layer, a second-type semiconductor layer, a first electrode, a second electrode, a Bragg reflector structure, a conductive layer and insulation patterns. The first electrode and the second electrode are located on the same side of the Bragg reflector structure. The conductive layer is disposed between the Bragg reflector structure and the second-type semiconductor layer. The insulation patterns are disposed between the conductive layer and the second-type semiconductor layer. Each insulating layer has a first surface facing toward the second-type semiconductor layer, a second surface facing away from the second-type semiconductor layer, and an inclined surface. The inclined surface connects the first surface and the second surface and is inclined with respect to the first surface and the second surface.

Abstract: Provided is a light-emitting diode chip including a semiconductor device layer, a first electrode, a current-blocking layer, a current-spreading layer, and a second electrode. The semiconductor device layer includes a first-type doped semiconductor layer, a second-type doped semiconductor layer, and a light-emitting layer therebetween. The first electrode is electrically connected to the first-type doped semiconductor layer. The current-blocking layer is on the second-type doped semiconductor layer. The current-blocking layer is between the current-spreading layer and the second-type doped semiconductor layer. The second electrode is on the current-spreading layer and electrically connected to the second-type doped semiconductor layer. The current-blocking layer has a first surface facing the semiconductor device layer, a second surface back on to the semiconductor device layer, and a first inclined surface.