Abstract: The invention discloses a NAND type ROM. The NAND type ROM comprises a plurality of bit lines, a plurality of word lines, a first source line, a second source line, and a plurality of NAND strings. The bit lines comprise a plurality of upper bit lines, first lower and second lower bit lines. The first lower and second lower bit lines are alternately arranged in parallel, and the plurality of word lines are vertically arranged to each bit lines. The first and second source line are respectively connected to the plurality of first and second lower bit lines. The plurality of NAND strings comprise a plurality of first and second NAND strings. The first NAND strings are connected to the upper bit lines, word lines, and first lower bit lines. The second NAND strings are connected to the upper bit lines, word lines, and second lower bit lines.