Patents by Inventor Chih-Horng Chang
Chih-Horng Chang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240153843Abstract: A package structure is provided. The package structure includes a semiconductor die and a thermoelectric structure disposed on the semiconductor die. The thermoelectric structure includes P-type semiconductor blocks, N-type semiconductor blocks and metal pads. The P-type semiconductor blocks and the N-type semiconductor blocks are arranged in alternation with the metal pads connecting the P-type semiconductor blocks and the N-type semiconductor blocks. When a current flowing through one of the N-type semiconductor block, one of the metal pad, and one of the P-type semiconductor block in order, the metal pad between the N-type semiconductor block and the P-type semiconductor block forms a cold junction which absorbs heat generated by the semiconductor die.Type: ApplicationFiled: January 17, 2024Publication date: May 9, 2024Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Cheng-Yen Hsieh, Chih-Horng Chang, Chung-Yu Lu
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Patent number: 11980040Abstract: A semiconductor device includes a substrate; a memory array over the substrate, the memory array including first magnetic tunnel junctions (MTJs), where the first MTJs are in a first dielectric layer over the substrate; and a resistor circuit over the substrate, the resistor circuit including second MTJs, where the second MTJs are in the first dielectric layer.Type: GrantFiled: June 14, 2021Date of Patent: May 7, 2024Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Tai-Yen Peng, Tsung-Hsien Chang, Yu-Shu Chen, Chih-Yuan Ting, Jyu-Horng Shieh, Chung-Te Lin
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Publication number: 20240096781Abstract: A package structure including a semiconductor die, a redistribution circuit structure and an electronic device is provided. The semiconductor die is laterally encapsulated by an insulating encapsulation. The redistribution circuit structure is disposed on the semiconductor die and the insulating encapsulation. The redistribution circuit structure includes a colored dielectric layer, inter-dielectric layers and redistribution conductive layers embedded in the inter-dielectric layers. The electronic device is disposed over the colored dielectric layer and electrically connected to the redistribution circuit structure.Type: ApplicationFiled: March 20, 2023Publication date: March 21, 2024Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Chun-Ti Lu, Hao-Yi Tsai, Chia-Hung Liu, Yu-Hsiang Hu, Hsiu-Jen Lin, Tzuan-Horng Liu, Chih-Hao Chang, Bo-Jiun Lin, Shih-Wei Chen, Hung-Chun Cho, Pei-Rong Ni, Hsin-Wei Huang, Zheng-Gang Tsai, Tai-You Liu, Po-Chang Shih, Yu-Ting Huang
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Patent number: 11915994Abstract: A package structure is provided. The package structure includes a semiconductor die and a thermoelectric structure disposed on the semiconductor die. The thermoelectric structure includes P-type semiconductor blocks, N-type semiconductor blocks and metal pads. The P-type semiconductor blocks and the N-type semiconductor blocks are arranged in alternation with the metal pads connecting the P-type semiconductor blocks and the N-type semiconductor blocks. When a current flowing through one of the N-type semiconductor block, one of the metal pad, and one of the P-type semiconductor block in order, the metal pad between the N-type semiconductor block and the P-type semiconductor block forms a cold junction which absorbs heat generated by the semiconductor die.Type: GrantFiled: August 12, 2021Date of Patent: February 27, 2024Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Cheng-Yen Hsieh, Chih-Horng Chang, Chung-Yu Lu
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Patent number: 11776880Abstract: A surface treatment and an apparatus for semiconductor packaging are provided. A surface of a conductive layer is treated to create a roughened surface. In one example, nanowires are formed on a surface of the conductive layer. In the case of a copper conductive layer, the nanowires may include a CuO layer. In another example, a complex compound is formed on a surface of the conductive layer. The complex compound may be formed using, for example, thiol and trimethyl phosphite.Type: GrantFiled: October 19, 2020Date of Patent: October 3, 2023Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Chih-Horng Chang, Jie-Cheng Deng, Tin-Hao Kuo, Ying-Yu Chen
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Publication number: 20230253355Abstract: The present disclosure relates to an integrated chip structure having a first substrate including a plurality of transistor devices disposed within a semiconductor material. An interposer substrate includes vias extending through a silicon layer. A copper bump is disposed between the first substrate and the interposer substrate. The copper bump has a sidewall defining a recess. Solder is disposed over the copper bump and continuously extending from over the copper bump to within the recess. A conductive layer is disposed between the first substrate and the interposer substrate and is separated from the copper bump by the solder.Type: ApplicationFiled: April 14, 2023Publication date: August 10, 2023Inventors: Chih-Horng Chang, Tin-Hao Kuo, Chen-Shien Chen, Yen-Liang Lin
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Patent number: 11631648Abstract: The present disclosure relates to an integrated chip structure having a first copper pillar disposed over a metal pad of an interposer substrate. The first copper pillar has a sidewall defining a recess. A nickel layer is disposed over the first copper pillar and a solder layer is disposed over the first copper pillar and the nickel layer. The solder layer continuously extends from directly over the first copper pillar to within the recess. A second copper layer is disposed between the solder layer and a second substrate.Type: GrantFiled: October 21, 2020Date of Patent: April 18, 2023Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Chih-Horng Chang, Tin-Hao Kuo, Chen-Shien Chen, Yen-Liang Lin
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Publication number: 20230090895Abstract: In an embodiment, a device includes: a first redistribution structure including a first dielectric layer; a die adhered to a first side of the first redistribution structure; an encapsulant laterally encapsulating the die, the encapsulant being bonded to the first dielectric layer with first covalent bonds; a through via extending through the encapsulant; and first conductive connectors electrically connected to a second side of the first redistribution structure, a subset of the first conductive connectors overlapping an interface of the encapsulant and the die.Type: ApplicationFiled: November 21, 2022Publication date: March 23, 2023Inventors: Kuo Lung Pan, Shu-Rong Chun, Teng-Yuan Lo, Hung-Yi Kuo, Chih-Horng Chang, Tin-Hao Kuo, Hao-Yi Tsai
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Publication number: 20230051881Abstract: A package structure is provided. The package structure includes a semiconductor die and a thermoelectric structure disposed on the semiconductor die. The thermoelectric structure includes P-type semiconductor blocks, N-type semiconductor blocks and metal pads. The P-type semiconductor blocks and the N-type semiconductor blocks are arranged in alternation with the metal pads connecting the P-type semiconductor blocks and the N-type semiconductor blocks. When a current flowing through one of the N-type semiconductor block, one of the metal pad, and one of the P-type semiconductor block in order, the metal pad between the N-type semiconductor block and the P-type semiconductor block forms a cold junction which absorbs heat generated by the semiconductor die.Type: ApplicationFiled: August 12, 2021Publication date: February 16, 2023Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Cheng-Yen Hsieh, Chih-Horng Chang, Chung-Yu Lu
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Patent number: 11508656Abstract: In an embodiment, a device includes: a first redistribution structure including a first dielectric layer; a die adhered to a first side of the first redistribution structure; an encapsulant laterally encapsulating the die, the encapsulant being bonded to the first dielectric layer with first covalent bonds; a through via extending through the encapsulant; and first conductive connectors electrically connected to a second side of the first redistribution structure, a subset of the first conductive connectors overlapping an interface of the encapsulant and the die.Type: GrantFiled: June 28, 2021Date of Patent: November 22, 2022Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Kuo Lung Pan, Shu-Rong Chun, Teng-Yuan Lo, Hung-Yi Kuo, Chih-Horng Chang, Tin-Hao Kuo, Hao-Yi Tsai
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Publication number: 20210327806Abstract: In an embodiment, a device includes: a first redistribution structure including a first dielectric layer; a die adhered to a first side of the first redistribution structure; an encapsulant laterally encapsulating the die, the encapsulant being bonded to the first dielectric layer with first covalent bonds; a through via extending through the encapsulant; and first conductive connectors electrically connected to a second side of the first redistribution structure, a subset of the first conductive connectors overlapping an interface of the encapsulant and the die.Type: ApplicationFiled: June 28, 2021Publication date: October 21, 2021Inventors: Kuo Lung Pan, Shu-Rong Chun, Teng-Yuan Lo, Hung-Yi Kuo, Chih-Horng Chang, Tin-Hao Kuo, Hao-Yi Tsai
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Patent number: 11049805Abstract: In an embodiment, a device includes: a first redistribution structure including a first dielectric layer; a die adhered to a first side of the first redistribution structure; an encapsulant laterally encapsulating the die, the encapsulant being bonded to the first dielectric layer with first covalent bonds; a through via extending through the encapsulant; and first conductive connectors electrically connected to a second side of the first redistribution structure, a subset of the first conductive connectors overlapping an interface of the encapsulant and the die.Type: GrantFiled: February 4, 2019Date of Patent: June 29, 2021Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Kuo Lung Pan, Shu-Rong Chun, Teng-Yuan Lo, Hung-Yi Kuo, Chih-Horng Chang, Tin-Hao Kuo, Hao-Yi Tsai
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Publication number: 20210050281Abstract: A surface treatment and an apparatus for semiconductor packaging are provided. A surface of a conductive layer is treated to create a roughened surface. In one example, nanowires are formed on a surface of the conductive layer. In the case of a copper conductive layer, the nanowires may include a CuO layer. In another example, a complex compound is formed on a surface of the conductive layer. The complex compound may be formed using, for example, thiol and trimethyl phosphite.Type: ApplicationFiled: October 19, 2020Publication date: February 18, 2021Inventors: Chih-Horng Chang, Jie-Cheng Deng, Tin-Hao Kuo, Ying-Yu Chen
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Publication number: 20210035938Abstract: The present disclosure relates to an integrated chip structure having a first copper pillar disposed over a metal pad of an interposer substrate. The first copper pillar has a sidewall defining a recess. A nickel layer is disposed over the first copper pillar and a solder layer is disposed over the first copper pillar and the nickel layer. The solder layer continuously extends from directly over the first copper pillar to within the recess. A second copper layer is disposed between the solder layer and a second substrate.Type: ApplicationFiled: October 21, 2020Publication date: February 4, 2021Inventors: Chih-Horng Chang, Tin-Hao Kuo, Chen-Shien Chen, Yen-Liang Lin
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Patent number: 10867892Abstract: A semiconductor structure includes a first die including a first surface and a second surface opposite to the first surface; a first molding surrounding the first die; and a first redistribution layer (RDL) disposed over the second surface of the first die and the first molding, and including a first dielectric layer, a first interconnect structure surrounded by the first dielectric layer, and a cooling mechanism disposed within the first dielectric layer, wherein the cooling mechanism includes a first conductive member, a second conductive member disposed opposite to the first conductive member, a first thermoelectric member and a second thermoelectric member adjacent to the first thermoelectric member; and wherein the first thermoelectric member and the second thermoelectric member extend substantially in parallel to the second surface of the first die and extend between the first conductive member and the second conductive member.Type: GrantFiled: August 22, 2019Date of Patent: December 15, 2020Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.Inventors: Chih-Horng Chang, Cheng-Yen Hsieh
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Patent number: 10833033Abstract: The present disclosure, in some embodiments, relates to a bump structure. The bump structure includes a conductive layer and a solder layer. The solder layer is disposed vertically below and laterally between portions of the conductive layer along a cross-section. The conductive layer is continuous between the portions.Type: GrantFiled: July 1, 2019Date of Patent: November 10, 2020Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Chih-Horng Chang, Tin-Hao Kuo, Chen-Shien Chen, Yen-Liang Lin
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Patent number: 10811338Abstract: A surface treatment and an apparatus for semiconductor packaging are provided. A surface of a conductive layer is treated to create a roughened surface. In one example, nanowires are formed on a surface of the conductive layer. In the case of a copper conductive layer, the nanowires may include a CuO layer. In another example, a complex compound is formed on a surface of the conductive layer. The complex compound may be formed using, for example, thiol and trimethyl phosphite.Type: GrantFiled: December 17, 2019Date of Patent: October 20, 2020Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Chih-Horng Chang, Jie-Cheng Deng, Tin-Hao Kuo, Ying-Yu Chen
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Publication number: 20200126893Abstract: A surface treatment and an apparatus for semiconductor packaging are provided. A surface of a conductive layer is treated to create a roughened surface. In one example, nanowires are formed on a surface of the conductive layer. In the case of a copper conductive layer, the nanowires may include a CuO layer. In another example, a complex compound is formed on a surface of the conductive layer. The complex compound may be formed using, for example, thiol and trimethyl phosphite.Type: ApplicationFiled: December 17, 2019Publication date: April 23, 2020Inventors: Chih-Horng Chang, Jie-Cheng Deng, Tin-Hao Kuo, Ying-Yu Chen
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Publication number: 20200020657Abstract: A package structure includes an insulating encapsulation, a semiconductor die, and a redistribution circuit structure. The semiconductor die is encapsulated in the insulating encapsulation. The redistribution circuit structure includes conductive patterns, wherein the conductive patterns each comprise a first portion, at least one second portion, and at least one connecting portion. A first edge of the at least one connecting portion is connected to the first portion, and a second edge of the at least one connecting portion is connected to the at least one second portion, wherein the first edge is opposite to the second edge, and a length of the first edge is greater than a length of the second edge.Type: ApplicationFiled: July 15, 2018Publication date: January 16, 2020Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Yu-Chia Lai, Chih-Horng Chang, Hao-Yi Tsai, Chih-Hsuan Tai
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Publication number: 20200006220Abstract: In an embodiment, a device includes: a first redistribution structure including a first dielectric layer; a die adhered to a first side of the first redistribution structure; an encapsulant laterally encapsulating the die, the encapsulant being bonded to the first dielectric layer with first covalent bonds; a through via extending through the encapsulant; and first conductive connectors electrically connected to a second side of the first redistribution structure, a subset of the first conductive connectors overlapping an interface of the encapsulant and the die.Type: ApplicationFiled: February 4, 2019Publication date: January 2, 2020Inventors: Kuo Lung Pan, Shu-Rong Chun, Teng-Yuan Lo, Hung-Yi Kuo, Chih-Horng Chang, Tin-Hao Kuo, Hao-Yi Tsai