Patents by Inventor Chih-Hui Huang
Chih-Hui Huang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11994970Abstract: A diagnostic system applied to an electronic equipment with a plurality of hardware devices is provided. The hardware devices include a display and a processor, the diagnostic system is executed by the processor to diagnose the hardware devices. The diagnostic system includes a diagnostic test interface, which is displayed on the display and includes a plurality of hardware items corresponding to the hardware devices. Each of the hardware items links to the hardware devices. When at least one of the hardware items is triggered, the processor executes the diagnostic item of the hardware device corresponding to the triggered hardware item.Type: GrantFiled: January 5, 2021Date of Patent: May 28, 2024Assignee: ASUSTEK COMPUTER INC.Inventors: Kun-Hsin Chiang, Hsin-Hui Huang, Wei-Hsian Chang, Wen-Yen Hsieh, Ming-Yi Huang, Yu-Chieh Chang, Tang-Hui Liao, Chih-Wei Kuo
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Publication number: 20240114688Abstract: A memory structure including a substrate, a first doped region, a second doped region, a first gate, a second gate, a first charge storage structure, and a second charge storage structure is provided. The first gate is located on the first doped region. The second gate is located on the second doped region. The first charge storage structure is located between the first gate and the first doped region. The first charge storage structure includes a first tunneling dielectric layer, a first dielectric layer, and a first charge storage layer. The second charge storage structure is located between the second gate and the second doped region. The second charge storage structure includes a second tunneling dielectric layer, a second dielectric layer, and a second charge storage layer. The thickness of the second tunneling dielectric layer is greater than the thickness of the first tunneling dielectric layer.Type: ApplicationFiled: November 21, 2022Publication date: April 4, 2024Applicant: United Microelectronics Corp.Inventors: Chia-Wen Wang, Chien-Hung Chen, Chia-Hui Huang, Ling Hsiu Chou, Jen Yang Hsueh, Chih-Yang Hsu
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Publication number: 20240099030Abstract: A bonded assembly includes an interposer; a semiconductor die that is attached to the interposer and including a planar horizontal bottom surface and a contoured sidewall; a high bandwidth memory (HBM) die that is attached to the interposer; and a dielectric material portion contacting the semiconductor die and the interposer. The contoured sidewall includes a vertical sidewall segment and a non-horizontal, non-vertical surface segment that is adjoined to a bottom edge of the vertical sidewall segment and is adjoined to an edge of the planar horizontal bottom surface of the semiconductor die. The vertical sidewall segment and the non-horizontal, non-vertical surface segment are in contact with the dielectric material portion. The contoured sidewall may provide a variable lateral spacing from the HBM die to reduce local stress in a portion of the HBM die that is proximal to the interposer.Type: ApplicationFiled: April 20, 2023Publication date: March 21, 2024Inventors: Kuan-Yu Huang, Sung-Hui Huang, Kuo-Chiang Ting, Chia-Hao Hsu, Hsien-Pin Hsu, Chih-Ta Shen, Shang-Yun Hou
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Publication number: 20240090053Abstract: In one example in accordance with the present disclosure, an electronic device is described. The electronic device includes a wireless controller. The wireless controller is to establish a first wireless connection between the electronic device and a peripheral device to receive a unique identifier for a second electronic device. The wireless controller is also to establish, based on the unique identifier for the second electronic device, a second wireless connection between the electronic device and the second electronic device. The electronic device includes a wireless transceiver to wirelessly transfer data to the second electronic device through the second wireless connection.Type: ApplicationFiled: February 2, 2021Publication date: March 14, 2024Applicant: Hewlett-Packard Development Company, L.P.Inventors: Chung-Chun Chen, Chen-Hui Lin, Chih-Ming Huang, Ming-Shien Tsai
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Publication number: 20240079268Abstract: The present disclosure, in some embodiments, relates to a method of forming an integrated chip structure. The method may be performed by forming a plurality of interconnect layers within a first interconnect structure disposed over an upper surface of a first semiconductor substrate. An edge trimming process is performed to remove parts of the first interconnect structure and the first semiconductor substrate along a perimeter of the first semiconductor substrate. The edge trimming process results in the first semiconductor substrate having a recessed surface coupled to the upper surface by way of an interior sidewall disposed directly over the first semiconductor substrate. A dielectric capping structure is formed onto a sidewall of the first interconnect structure after performing the edge trimming process.Type: ApplicationFiled: November 10, 2023Publication date: March 7, 2024Inventors: Chih-Hui Huang, Cheng-Hsien Chou, Cheng-Yuan Tsai, Kuo-Ming Wu, Sheng-Chan Li
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Patent number: 11915977Abstract: A stacked integrated circuit (IC) device and a method are disclosed. The stacked IC device includes a first semiconductor element. The first substrate includes a dielectric block in the first substrate; and a plurality of first conductive features formed in first inter-metal dielectric layers over the first substrate. The stacked IC device also includes a second semiconductor element bonded on the first semiconductor element. The second semiconductor element includes a second substrate and a plurality of second conductive features formed in second inter-metal dielectric layers over the second substrate. The stacked IC device also includes a conductive deep-interconnection-plug coupled between the first conductive features and the second conductive features. The conductive deep-interconnection-plug is isolated by dielectric block, the first inter-metal-dielectric layers and the second inter-metal-dielectric layers.Type: GrantFiled: April 12, 2021Date of Patent: February 27, 2024Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Shu-Ting Tsai, Jeng-Shyan Lin, Dun-Nian Yaung, Jen-Cheng Liu, Feng-Chi Hung, Chih-Hui Huang, Sheng-Chau Chen, Shih Pei Chou, Chia-Chieh Lin
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Patent number: 11862515Abstract: The present disclosure, in some embodiments, relates to a method of forming an integrated chip structure. The method may be performed by forming a plurality of interconnect layers within a first interconnect structure disposed over an upper surface of a first semiconductor substrate. An edge trimming process is performed to remove parts of the first interconnect structure and the first semiconductor substrate along a perimeter of the first semiconductor substrate. The edge trimming process results in the first semiconductor substrate having a recessed surface coupled to the upper surface by way of an interior sidewall disposed directly over the first semiconductor substrate. A dielectric capping structure is formed onto a sidewall of the first interconnect structure after performing the edge trimming process.Type: GrantFiled: August 4, 2022Date of Patent: January 2, 2024Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Chih-Hui Huang, Cheng-Hsien Chou, Cheng-Yuan Tsai, Kuo-Ming Wu, Sheng-Chan Li
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Publication number: 20230381996Abstract: An ultrasonic device is provided and includes an action member, a driving member and a rotating shaft connected to the driving member. The action member provides ultrasonic vibration and vibrates the driving member, so that the driving member oscillates to make the rotating shaft and a cutter oscillate in the same direction together, so the cutter can remove scrap by oscillating during the cutting operation.Type: ApplicationFiled: July 13, 2022Publication date: November 30, 2023Applicant: SILICONWARE PRECISION INDUSTRIES CO., LTD.Inventors: Yu-Lung Huang, Chih-Hui Huang, Cheng-Ying Hsieh, Sin-Cyuan Lin, Men-Yeh Chiang, Chao-Lin Chang, Ting-Hsu Lu
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Patent number: 11610812Abstract: The present disclosure, in some embodiments, relates to a method of forming an integrated chip structure. The method may be performed by forming a plurality of interconnect layers within a first interconnect structure disposed over an upper surface of a first semiconductor substrate. An edge trimming process is performed to remove parts of the first interconnect structure and the first semiconductor substrate along a perimeter of the first semiconductor substrate. The edge trimming process results in the first semiconductor substrate having a recessed surface coupled to the upper surface by way of an interior sidewall disposed directly over the first semiconductor substrate. A dielectric capping structure is formed onto a sidewall of the first interconnect structure after performing the edge trimming process.Type: GrantFiled: September 30, 2020Date of Patent: March 21, 2023Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Chih-Hui Huang, Cheng-Hsien Chou, Cheng-Yuan Tsai, Kuo-Ming Wu, Sheng-Chan Li
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Publication number: 20220415959Abstract: A method of fabricating a semiconductor device includes forming a first film having a first film stress type and a first film stress intensity over a substrate and forming a second film having a second film stress type and a second film stress intensity over the first film. The second film stress type is different than the first film stress type. The second film stress intensity is about same as the first film stress intensity. The second film compensates stress induced effect of non-flatness of the substrate by the first film.Type: ApplicationFiled: July 7, 2022Publication date: December 29, 2022Inventors: Chi-Ming LU, Chih-Hui HUANG, Sheng-Chan LI, Jung-Chih TSAO, Yao-Hsiang LIANG
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Publication number: 20220375789Abstract: The present disclosure, in some embodiments, relates to a method of forming an integrated chip structure. The method may be performed by forming a plurality of interconnect layers within a first interconnect structure disposed over an upper surface of a first semiconductor substrate. An edge trimming process is performed to remove parts of the first interconnect structure and the first semiconductor substrate along a perimeter of the first semiconductor substrate. The edge trimming process results in the first semiconductor substrate having a recessed surface coupled to the upper surface by way of an interior sidewall disposed directly over the first semiconductor substrate. A dielectric capping structure is formed onto a sidewall of the first interconnect structure after performing the edge trimming process.Type: ApplicationFiled: August 4, 2022Publication date: November 24, 2022Inventors: Chih-Hui Huang, Cheng-Hsien Chou, Cheng-Yuan Tsai, Kuo-Ming Wu, Sheng-Chan Li
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Publication number: 20220359607Abstract: A method of forming a deep trench isolation in a radiation sensing substrate includes: forming a trench in the radiation sensing substrate; forming a corrosion resistive layer in the trench, in which the corrosion resistive layer includes titanium carbon nitride having a chemical formula of TiCxN(2-x), and x is in a range of 0.1 to 0.9; and filling a reflective material in the trench and over the corrosion resistive layer.Type: ApplicationFiled: July 25, 2022Publication date: November 10, 2022Inventors: Chi-Ming LU, Chih-Hui HUANG, Jung-Chih TSAO, Yao-Hsiang LIANG, Chih-Chang HUANG, Ching-Ho HSU
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Patent number: 11404470Abstract: A method of forming a deep trench isolation in a radiation sensing substrate includes: forming a trench in the radiation sensing substrate; forming a corrosion resistive layer in the trench, in which the corrosion resistive layer includes titanium carbon nitride having a chemical formula of TiCxN(2-x), and x is in a range of 0.1 to 0.9; and filling a reflective material in the trench and over the corrosion resistive layer.Type: GrantFiled: December 13, 2019Date of Patent: August 2, 2022Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Chi-Ming Lu, Chih-Hui Huang, Jung-Chih Tsao, Yao-Hsiang Liang, Chih-Chang Huang, Ching-Ho Hsu
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Patent number: 11387274Abstract: A method of fabricating a semiconductor device includes forming a first film having a first film stress type and a first film stress intensity over a substrate and forming a second film having a second film stress type and a second film stress intensity over the first film. The second film stress type is different than the first film stress type. The second film stress intensity is about same as the first film stress intensity. The second film compensates stress induced effect of non-flatness of the substrate by the first film.Type: GrantFiled: November 11, 2019Date of Patent: July 12, 2022Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Chi-Ming Lu, Chih-Hui Huang, Sheng-Chan Li, Jung-Chih Tsao, Yao-Hsiang Liang
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Patent number: 11276587Abstract: An apparatus for and a method of bonding a first substrate and a second substrate are provided. In an embodiment a first wafer chuck has a first curved surface and a second wafer chuck has a second curved surface. A first wafer is placed on the first wafer chuck and a second wafer is placed on a second wafer chuck, such that both the first wafer and the second wafer are pre-warped prior to bonding. Once the first wafer and the second wafer have been pre-warped, the first wafer and the second wafer are bonded together.Type: GrantFiled: November 19, 2019Date of Patent: March 15, 2022Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Chih-Hui Huang, Chun-Han Tsao, Sheng-Chau Chen, Yeur-Luen Tu, Chia-Shiung Tsai, Xiaomeng Chen
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Patent number: 11189654Abstract: A plurality of radiation-sensing doped regions are formed in a substrate. A trench is formed in the substrate between the radiation-sensing doped regions. A SiOCN layer is filled in the trench by reacting Bis(tertiary-butylamino)silane (BTBAS) and a gas mixture comprising N2O, N2 and O2 through a plasma enhanced atomic layer deposition (PEALD) method, to form an isolation structure between the radiation-sensing doped regions.Type: GrantFiled: June 14, 2020Date of Patent: November 30, 2021Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Chao-Ching Chang, Sheng-Chan Li, Chih-Hui Huang, Jian-Shin Tsai, Cheng-Yi Wu, Chia-Hsing Chou, Yi-Ming Lin, Min-Hui Lin, Chin-Szu Lee
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Publication number: 20210358740Abstract: The present disclosure for wafer bonding, including forming an epitaxial layer on a top surface of a first wafer, forming a sacrificial layer over the epitaxial layer, trimming an edge of the first wafer, removing the sacrificial layer, forming an oxide layer over the top surface of the first wafer subsequent to removing the sacrificial layer, and bonding the top surface of the first wafer to a second wafer.Type: ApplicationFiled: July 30, 2021Publication date: November 18, 2021Inventors: YUNG-LUNG LIN, HAU-YI HSIAO, CHIH-HUI HUANG, KUO-HWA TZENG, CHENG-HSIEN CHOU
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Patent number: 11139210Abstract: In some embodiments, a method for bonding semiconductor wafers is provided. The method includes forming a first integrated circuit (IC) over a central region of a first semiconductor wafer. A first ring-shaped bonding support structure is formed over a ring-shaped peripheral region of the first semiconductor wafer, where the ring-shaped peripheral region of the first semiconductor wafer encircles the central region of the first semiconductor wafer. A second semiconductor wafer is bonded to the first semiconductor wafer, such that a second IC arranged on the second semiconductor wafer is electrically coupled to the first IC.Type: GrantFiled: June 23, 2020Date of Patent: October 5, 2021Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Sheng-Chan Li, Cheng-Hsien Chou, Cheng-Yuan Tsai, Chih-Hui Huang, Kuo-Ming Wu
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Patent number: 11087971Abstract: The present disclosure provides a method for wafer bonding, including providing a wafer, forming a sacrificial layer on a top surface of the first wafer, trimming an edge of the first wafer to obtain a first wafer area, cleaning the top surface of the first wafer, removing the sacrificial layer, and bonding the top surface of the first wafer to a second wafer having a second wafer area greater than the first wafer area.Type: GrantFiled: November 15, 2019Date of Patent: August 10, 2021Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.Inventors: Yung-Lung Lin, Hau-Yi Hsiao, Chih-Hui Huang, Kuo-Hwa Tzeng, Cheng-Hsien Chou
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Publication number: 20210233813Abstract: A stacked integrated circuit (IC) device and a method are disclosed. The stacked IC device includes a first semiconductor element. The first substrate includes a dielectric block in the first substrate; and a plurality of first conductive features formed in first inter-metal dielectric layers over the first substrate. The stacked IC device also includes a second semiconductor element bonded on the first semiconductor element. The second semiconductor element includes a second substrate and a plurality of second conductive features formed in second inter-metal dielectric layers over the second substrate. The stacked IC device also includes a conductive deep-interconnection-plug coupled between the first conductive features and the second conductive features. The conductive deep-interconnection-plug is isolated by dielectric block, the first inter-metal-dielectric layers and the second inter-metal-dielectric layers.Type: ApplicationFiled: April 12, 2021Publication date: July 29, 2021Inventors: Shu-Ting Tsai, Jeng-Shyan Lin, Dun-Nian Yaung, Jen-Cheng Liu, Feng-Chi Hung, Chih-Hui Huang, Sheng-Chau Chen, Shih Pei Chou, Chia-Chieh Lin