Patents by Inventor Chih-Hui Weng

Chih-Hui Weng has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Magnetoresistive random-access memory (MRAM) random number generator (RNG) and a related method for generating a random bit
    Patent number: 11726747
    Abstract: In some embodiments, a method for generating a random bit is provided. The method includes generating a first random bit by providing a random number generator (RNG) signal to a magnetoresistive random-access memory (MRAM) cell. The RNG signal has a probability of about 0.5 to switch the resistive state of the MRAM cell from a first resistive state corresponding to a first data state to a second resistive state corresponding to a second data sate. The first random bit is then read from the MRAM cell.
    Type: Grant
    Filed: December 9, 2022
    Date of Patent: August 15, 2023
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Harry-Hak-Lay Chuang, Chih-Yang Chang, Ching-Huang Wang, Chih-Hui Weng, Tien-Wei Chiang, Meng-Chun Shih, Chia Yu Wang, Chia-Hsiang Chen
  • MAGNETORESISTIVE RANDOM-ACCESS MEMORY (MRAM) RANDOM NUMBER GENERATOR (RNG) AND A RELATED METHOD FOR GENERATING A RANDOM BIT
    Publication number: 20230115281
    Abstract: In some embodiments, a method for generating a random bit is provided. The method includes generating a first random bit by providing a random number generator (RNG) signal to a magnetoresistive random-access memory (MRAM) cell. The RNG signal has a probability of about 0.5 to switch the resistive state of the MRAM cell from a first resistive state corresponding to a first data state to a second resistive state corresponding to a second data sate. The first random bit is then read from the MRAM cell.
    Type: Application
    Filed: December 9, 2022
    Publication date: April 13, 2023
    Inventors: Harry-Hak-Lay Chuang, Chih-Yang Chang, Ching-Huang Wang, Chih-Hui Weng, Tien-Wei Chiang, Meng-Chun Shih, Chia Yu Wang, Chia-Hsiang Chen
  • Magnetoresistive random-access memory (MRAM) random number generator (RNG) and a related method for generating a random bit
    Patent number: 11531524
    Abstract: In some embodiments, a method for generating a random bit is provided. The method includes generating a first random bit by providing a random number generator (RNG) signal to a magnetoresistive random-access memory (MRAM) cell. The RNG signal has a probability of about 0.5 to switch the resistive state of the MRAM cell from a first resistive state corresponding to a first data state to a second resistive state corresponding to a second data state. The first random bit is then read from the MRAM cell.
    Type: Grant
    Filed: June 7, 2019
    Date of Patent: December 20, 2022
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Harry-Hak-Lay Chuang, Chih-Yang Chang, Ching-Huang Wang, Chih-Hui Weng, Tien-Wei Chiang, Meng-Chun Shih, Chia Yu Wang, Chia-Hsiang Chen
  • Test apparatus and testing method using the same
    Patent number: 11249131
    Abstract: A test apparatus includes a tray including at least a first region and a second region, and a cap disposed over the tray. The cap includes a cap body, and at least a first magnet and a second magnet disposed over the cap body. The first magnet is configured to provide a first magnetic field to the first region of the tray, and the second magnet is configured to provide a second magnetic field to the second region of the tray. A strength of the first magnetic field is different from a strength of the second magnetic field.
    Type: Grant
    Filed: April 1, 2020
    Date of Patent: February 15, 2022
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
    Inventors: Harry-Hak-Lay Chuang, Tien-Wei Chiang, Chia Yu Wang, Meng-Chun Shih, Ching-Huang Wang, Chih-Yang Chang, Chia-Hsiang Chen, Chih-Hui Weng
  • TEST APPARATUS AND TESTING METHOD USING THE SAME
    Publication number: 20210311105
    Abstract: A test apparatus includes a tray including at least a first region and a second region, and a cap disposed over the tray. The cap includes a cap body, and at least a first magnet and a second magnet disposed over the cap body. The first magnet is configured to provide a first magnetic field to the first region of the tray, and the second magnet is configured to provide a second magnetic field to the second region of the tray. A strength of the first magnetic field is different from a strength of the second magnetic field.
    Type: Application
    Filed: April 1, 2020
    Publication date: October 7, 2021
    Inventors: HARRY-HAK-LAY CHUANG, TIEN-WEI CHIANG, CHIA YU WANG, MENG-CHUN SHIH, CHING-HUANG WANG, CHIH-YANG CHANG, CHIA-HSIANG CHEN, CHIH-HUI WENG
  • MAGNETORESISTIVE RANDOM-ACCESS MEMORY (MRAM) RANDOM NUMBER GENERATOR (RNG) AND A RELATED METHOD FOR GENERATING A RANDOM BIT
    Publication number: 20200097255
    Abstract: In some embodiments, a method for generating a random bit is provided. The method includes generating a first random bit by providing a random number generator (RNG) signal to a magnetoresistive random-access memory (MRAM) cell. The RNG signal has a probability of about 0.5 to switch the resistive state of the MRAM cell from a first resistive state corresponding to a first data state to a second resistive state corresponding to a second data sate. The first random bit is then read from the MRAM cell.
    Type: Application
    Filed: June 7, 2019
    Publication date: March 26, 2020
    Inventors: Harry-Hak-Lay Chuang, Chih-Yang Chang, Ching-Huang Wang, Chih-Hui Weng, Tien-Wei Chiang, Meng-Chun Shih, Chia Yu Wang, Chia-Hsiang Chen
  • Methods of manufacturing semiconductor devices including use of a protective material
    Patent number: 8809202
    Abstract: Methods of manufacturing semiconductor devices are disclosed. In one embodiment, a method of manufacturing a semiconductor device includes providing a workpiece, and forming a protective material over a bottom surface and edges of the workpiece. A top surface of the workpiece is processed. The protective material protects the edges and the bottom surface of the workpiece during the processing of the top surface of the workpiece.
    Type: Grant
    Filed: February 14, 2012
    Date of Patent: August 19, 2014
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Chih-Hui Weng, Wei-Sheng Yun, Shao-Ming Yu, Hsin-Chih Chen, Chih-Hsin Ko, Clement Hsingjen Wann
  • Semiconductor Device Manufacturing Methods
    Publication number: 20130210212
    Abstract: Methods of manufacturing semiconductor devices are disclosed. In one embodiment, a method of manufacturing a semiconductor device includes providing a workpiece, and forming a protective material over a bottom surface and edges of the workpiece. A top surface of the workpiece is processed. The protective material protects the edges and the bottom surface of the workpiece during the processing of the top surface of the workpiece.
    Type: Application
    Filed: February 14, 2012
    Publication date: August 15, 2013
    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Chih-Hui Weng, Wei-Sheng Yun, Shao-Ming Yu, Hsin-Chih Chen, Chih-Hsin Ko, Clement Hsingjen Wann