Abstract: A method of evaluating a thickness of a film on a substrate includes detecting atomic force responses of the film to exposure of electromagnetic radiation in the infrared portion of the electromagnetic spectrum. The use of atomic force microscopy to evaluate thicknesses of thin films avoids underlayer noise commonly encountered when optical metrology techniques are utilized to evaluate film thicknesses. Such underlayer noise adversely impacts the accuracy of the thickness evaluation.

Abstract: The present disclosure provides a method for manufacturing a semiconductor structure with capacitor landing pads. The method includes the following operations: providing a semiconductor substrate; forming a bit line structure protruding from the semiconductor substrate; depositing a landing pad layer to cover the bit line structure; planarizing a top surface of the landing pad layer; limning a trench in the landing pad layer to form the capacitor landing pads; forming an air gap within a sidewall of the bit line structure; and filling a first dielectric layer in the trench to seal the air gap.

Abstract: The present application discloses a semiconductor device with a protruding contact and a method for fabricating the semiconductor device with the protruding contact. The semiconductor device includes a substrate, a capacitor contact structure protruding from the substrate, and a landing pad layer covering a portion of a top surface of the capacitor contact structure and an upper portion of a sidewall of the capacitor contact structure.

Abstract: The present application discloses a method for fabricating a semiconductor device with a protruding contact. The method includes providing a substrate; forming a bit line structure on the substrate; forming a capacitor contact structure next to the bit line structure; recessing a top surface of the bit line structure; and forming a landing pad layer covering a portion of a top surface of the capacitor contact structure and an upper portion of a sidewall of the capacitor contact structure.

Abstract: A voltage controlled oscillator is provided. The voltage controlled oscillator includes a current controlled oscillator, a voltage to current conversion circuit and a noise cancellation circuit. The current controlled oscillator is configured to receive a bias current and generate an oscillating signal with an oscillating frequency according to the bias current. The voltage to current conversion circuit is coupled to a power supply voltage and configured to generate a supply current according to an input voltage. The noise cancellation circuit is configured to receive a bias voltage and the supply current from the voltage to current conversion circuit, and configured to generate a noise cancellation current in response to power supply voltage variation and cancel the noise cancellation current from the supply current to generate the bias current. The bias voltage of the noise cancellation circuit is coupled to an internal voltage of the voltage to current conversion circuit.

Abstract: A method for ex vivo treating blood or plasma is provided. The method includes (a) ex vivo contacting a blood or plasma with an enzyme composition to react the enzyme composition with the blood or plasma, wherein the enzyme composition is capable of eliminating electronegative low-density lipoprotein from the blood or plasma by the activity of the enzyme composition, and the enzyme composition is selected from a group consisting of: a first enzyme for eliminating a glycan residue of an electronegative low-density lipoprotein (LDL); a second enzyme for eliminating ceramide carried by a electronegative low-density lipoprotein (LDL); and a combination thereof; and (b) terminating contact between the blood or plasma and the enzyme composition to terminate the reaction of the enzyme composition with the blood or plasma.

Abstract: A method includes cropping a plurality of images from a layout of an integrated circuit, generating a first plurality of hash values, each from one of the plurality of images, loading a second plurality of hash values stored in a hotspot library, and comparing each of the first plurality of hash values with each of the second plurality of hash values. The step of comparing includes calculating a similarity value between the each of the first plurality of hash values and the each of the second plurality of hash values. The method further includes comparing the similarity value with a pre-determined threshold similarity value, and in response to a result that the similarity value is greater than the pre-determined threshold similarity value, recording a position of a corresponding image that has the result. The position is the position of the corresponding image in the layout.

Abstract: A method of evaluating a thickness of a film on a substrate includes detecting atomic force responses of the film to exposure of electromagnetic radiation in the infrared portion of the electromagnetic spectrum. The use of atomic force microscopy to evaluate thicknesses of thin films avoids underlayer noise commonly encountered when optical metrology techniques are utilized to evaluate film thicknesses. Such underlayer noise adversely impacts the accuracy of the thickness evaluation.

Abstract: A magnetic polishing slurry for polishing a workpiece includes magnetic particles coated with a modifying material, a liquid carrier, and abrasives. The modifying material has a hardness lower than that of the workpiece.

Abstract: A chemical mechanical planarization (CMP) system including a capacitive deionization module (CDM) for removing ions from a solution and a method for using the same are disclosed. In an embodiment, an apparatus includes a planarization unit for planarizing a wafer; a cleaning unit for cleaning the wafer; a wafer transportation unit for transporting the wafer between the planarization unit and the cleaning unit; and a capacitive deionization module for removing ions from a solution used in at least one of the planarization unit or the cleaning unit.

Abstract: A semiconductor structure and a method for forming the same are provided. The semiconductor structure includes a gate structure, a source/drain structure, a dielectric layer, a contact plug. The gate structure is positioned over a fin structure. The source/drain structure is positioned in the fin structure and adjacent to the gate structure. The dielectric layer is positioned over the gate structure and the source/drain structure. The contact plug is positioned passing through the dielectric layer. The contact plug includes a first metal compound including one of group III elements, group IV elements, group V elements or a combination thereof.

Abstract: A chemical mechanical planarization apparatus includes a multi-zone platen comprising a plurality of individually controlled concentric toroids. The rotation direction, rotation speed, applied force, relative height, and temperature of each concentric toroid is individually controlled. Concentric polishing pads are affixed to an upper surface of each of the individually controlled concentric toroids. The chemical mechanical planarization apparatus includes a single central slurry source or includes individual slurry sources for each individually controlled concentric toroid.

Abstract: A chemical mechanical planarization (CMP) system including a capacitive deionization module (CDM) for removing ions from a solution and a method for using the same are disclosed. In an embodiment, an apparatus includes a planarization unit for planarizing a wafer; a cleaning unit for cleaning the wafer; a wafer transportation unit for transporting the wafer between the planarization unit and the cleaning unit; and a capacitive deionization module for removing ions from a solution used in at least one of the planarization unit or the cleaning unit.

Abstract: The present disclosure provides an in-ear headphone device including a loudspeaker having a loudspeaker diaphragm and a microphone, wherein the device is arranged to provide a noise cancelling audio signal to the loudspeaker. The loudspeaker and microphone are acoustically coupled within a device housing, and the device includes an acoustic tube coupling the device to an ear canal of a user. The acoustic tube is associated with an acoustic tube axis defining a projection plane perpendicular to the acoustic tube axis. The loudspeaker and microphone are arranged such that a projection area of the loudspeaker diaphragm onto the projection plane and a projection area of the microphone onto the projection plane are non-intersecting. The disclosure further provides an in-ear headphone device set including a first and a second in-ear headphone device.

Abstract: A motion sensitive lamp with a coupling mechanism is provided. The motion sensitive lamp is installed on a wall or a ceiling. The motion sensitive lamp at least includes a lamp body, a base and a coupling mechanism. A coupling mechanism includes an engaging structure, a positioning structure and a limiting element. One of the engaging structure and the positioning structure is installed on the lamp body. The other of the engaging structure and the positioning structure is installed on the base. The engaging structure is inserted into the positioning structure, so that the lamp body is locked on or coupled with the base. When an external force is applied to the limiting element, the external force results in a displacement of the limiting element, so that the limiting element is inserted into one of the base and the lamp body.

Abstract: Various embodiments provide a thickness sensor and method for measuring a thickness of discrete conductive features, such as conductive lines and plugs. In one embodiment, the thickness sensor generates an Eddy current in a plurality of discrete conductive features, and measures the generated Eddy current generated in the discrete conductive features. The thickness sensor has a small sensor spot size, and amplifies peaks and valleys of the measured Eddy current. The thickness sensor determines a thickness of the discrete conductive features based on a difference between a minimum amplitude value and a maximum amplitude value of the measured Eddy current.

Abstract: A chemical mechanical planarization (CMP) tool includes a platen and a polishing pad attached to the platen, where a first surface of the polishing pad facing away from the platen includes a first polishing zone and a second polishing zone, where the first polishing zone is a circular region at a center of the first surface of the polishing pad, and the second polishing zone is an annular region around the first polishing zone, where the first polishing zone and the second polishing zone have different surface properties.

Abstract: Various embodiments provide a thickness sensor and method for measuring a thickness of discrete conductive features, such as conductive lines and plugs. In one embodiment, the thickness sensor generates an Eddy current in a plurality of discrete conductive features, and measures the generated Eddy current generated in the discrete conductive features. The thickness sensor has a small sensor spot size, and amplifies peaks and valleys of the measured Eddy current. The thickness sensor determines a thickness of the discrete conductive features based on a difference between a minimum amplitude value and a maximum amplitude value of the measured Eddy current.

Abstract: In an embodiment, a method includes: performing a self-limiting process to modify a top surface of a wafer; after the self-limiting process completes, removing the modified top surface from the wafer; and repeating the performing the self-limiting process and the removing the modified top surface from the wafer until a thickness of the wafer is decreased to a predetermined thickness.

Abstract: A motion sensitive lamp with a coupling mechanism is provided. The motion sensitive lamp is installed on a wall or a ceiling. The motion sensitive lamp at least includes a lamp body, a base and a coupling mechanism. A coupling mechanism includes an engaging structure, a positioning structure and a limiting element. One of the engaging structure and the positioning structure is installed on the lamp body. The other of the engaging structure and the positioning structure is installed on the base. The engaging structure is inserted into the positioning structure, so that the lamp body is locked on or coupled with the base. When an external force is applied to the limiting element, the external force results in a displacement of the limiting element, so that the limiting element is inserted into one of the base and the lamp body.